Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF AMPLIFIER MODULE Search Results

    RF AMPLIFIER MODULE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    RF AMPLIFIER MODULE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    motorola zc 527

    Abstract: S12 sot 23-6
    Text: MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is


    Original     		PDF MBC13916 MBC13916 MRFIC0916 MRFIC0916, motorola zc 527 S12 sot 23-6

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is


    Original     		PDF MBC13916/D MBC13916 MBC13916 MRFIC0916 MRFIC0916, MBC13916/D

    PRF10

    Abstract: MBC13916 MBC13916T1 MRFIC0916 937 motorola 0933 34 motorola zc 527
    Text: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is


    Original     		PDF MBC13916/D MBC13916 MBC13916 MRFIC0916 MRFIC0916, PRF10 MBC13916T1 937 motorola 0933 34 motorola zc 527

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


    Original     		PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications

    sot343r

    Abstract: motorola rf module SOT-343 motorola marking MRFIC0916 MBC13916 motorola 4 mhz SOT-343R
    Text: Order this document by MBC13916PP/D MBC13916 Product Preview The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is


    Original     		PDF MBC13916PP/D MBC13916 MBC13916 MRFIC0916 MRFIC0916, sot343r motorola rf module SOT-343 motorola marking motorola 4 mhz SOT-343R

    Untitled

    Abstract: No abstract text available
    Text: Changing the Economics of Space Features •• Single-stage 2 watts or two-stage (4 watts) amplifier design utilizing discrete RF GaAs FET transistors providing linear RF output power •• 2 W amplifier is a single module configuration housing the DC power supply and RF amplifier


    Original     		PDF 2009-certified

    MBC13916

    Abstract: MBC13916T1 MRFIC0916 motorola zc 527 Motorola Zc 34
    Text: Freescale Semiconductor, Inc. Order this document by MBC13916/D MBC13916 The RF Building Block Series Freescale Semiconductor, Inc. General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with


    Original     		PDF MBC13916/D MBC13916 MBC13916 MRFIC0916 MRFIC0916, MBC13916T1 motorola zc 527 Motorola Zc 34

    gsm booster circuit

    Abstract: mrf373al u880 RF MODULATORS mrf9030n MRF6VP11KH MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060
    Text: RF Product Focus Products Quarter 4, 2007 SG1009Q42007 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers


    Original     		PDF SG1009Q42007 MRF6VP11KH MRF6VP21KH MRF6VP41KH/HS gsm booster circuit mrf373al u880 RF MODULATORS mrf9030n MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060

    MHL9838N

    Abstract: No abstract text available
    Text: Chapter Six RF Amplifier ICs and Modules Data Sheets Device Number Page Number Amplifier ICs and Modules MHL9236N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3 MHL9236MN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF MHL9236N MHL9236MN MHL9318N MHL9838N MHL18336N MHL18926N MHL19338N MHL19926N MHL19936N MW4IC2230GMBR1 MHL9838N

    Untitled

    Abstract: No abstract text available
    Text: RF Micro Devices RF5198 and RF5184 High-Power, High-Efficiency Linear Power Amplifier Modules for WCDMA Applications The RF5198 and RF5184 from RF Micro Devices® RFMD® are high-power, high-efficiency linear power amplifier modules specifically designed for


    Original     		PDF RF5198 RF5184 RF5184 RF5198) RF5184)

    MHL9838

    Abstract: MHL9236
    Text: Chapter Six Motorola RF Amplifier ICs and Modules – Data Sheets Device Number Page Number Amplifier ICs and Modules MHL9236 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6–3 MHL9236M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF MHL9236 MHL9236M MHL9318 MHL9838 MHL18336 MHL18926 MHL19338 MHL19926 MHL19936 MHVIC910HR2 MHL9838 MHL9236

    S-AU82VL

    Abstract: TOSHIBA RF Power Module 5-53P
    Text: S-AU82VL TOSHIBA RF POWER AMPLIFIER MODULE S-AU82VL ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AU82VL Po60W VDD12 VDD16 S-AU82VL TOSHIBA RF Power Module 5-53P

    S-AU83H

    Abstract: 5-53P
    Text: S-AU83H TOSHIBA RF POWER AMPLIFIER MODULE S-AU83H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AU83H Po32W VDD12 VDD16 -40oducts S-AU83H 5-53P

    S-AV35

    Abstract: RF power amplifier 10mW RF Power Amplifier Module
    Text: S-AV35 TOSHIBA RF POWER AMPLIFIER MODULE S-AV35 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AV35 S-AV35 RF power amplifier 10mW RF Power Amplifier Module

    S-AV33

    Abstract: 5-53P
    Text: S-AV33 TOSHIBA RF POWER AMPLIFIER MODULE S-AV33 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AV33 Po32W VDD12 VDD16 S-AV33 5-53P

    S-AU82L

    Abstract: SAU82L 5-53P
    Text: S-AU82L TOSHIBA RF POWER AMPLIFIER MODULE S-AU82L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AU82L Po60W VDD12 VDD16 -40oducts S-AU82L SAU82L 5-53P

    S-AV33A

    Abstract: S-AV33 5-53P S-AU82AL
    Text: S-AV33A TOSHIBA RF POWER AMPLIFIER MODULE S-AV33A FM RF POWER AMPLIFIER MODULE FOR 32W COMMERCIAL VHF RADIO APPLICATIONS ･Power Gain: 28 dB Min. ･Total Efficiency: 45% (Min.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 10 A, ZG = ZL = 50Ω) CHARACTERISTICS


    Original     		PDF S-AV33A S-AV33A S-AV33 5-53P S-AU82AL

    sav40

    Abstract: S-AV40
    Text: S-AV40 TOSHIBA RF POWER AMPLIFIER MODULE S-AV40 FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS ･Power Gain: 34.7 dB Min. ･Total Efficiency: 40% (Min.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 8 A, ZG = ZL = 50Ω) CHARACTERISTICS


    Original     		PDF S-AV40 sav40 S-AV40

    S-AU82H

    Abstract: 5-53P
    Text: S-AU82H TOSHIBA RF POWER AMPLIFIER MODULE S-AU82H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AU82H Po60W VDD12 VDD16 -40oducts S-AU82H 5-53P

    TOSHIBA RF Power Module S-AV36

    Abstract: S-AV36 toshiba S-AV36 sav36 5-53P VDD12
    Text: S-AV36 TOSHIBA RF POWER AMPLIFIER MODULE S-AV36 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :80W Min. ･Power Gain :32.0dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AV36 Po60W VDD12 VDD16 TOSHIBA RF Power Module S-AV36 S-AV36 toshiba S-AV36 sav36 5-53P

    toshiba S-AV32

    Abstract: S-AV32 60W VHF circuit RF amplifier 5-53P
    Text: S-AV32 TOSHIBA RF POWER AMPLIFIER MODULE S-AV32 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AV32 Po60W VDD12 VDD16 toshiba S-AV32 S-AV32 60W VHF circuit RF amplifier 5-53P

    S-AV37

    Abstract: RF power amplifier 10mW
    Text: S-AV37 TOSHIBA RF POWER AMPLIFIER MODULE S-AV37 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AV37 Po45W VDD12 VDD16 S-AV37 RF power amplifier 10mW

    S-AV35

    Abstract: "RF Power Amplifier" RF power amplifier 10mW
    Text: S-AV35 TOSHIBA RF POWER AMPLIFIER MODULE S-AV35 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AV35 Po45W VDD12 VDD16 S-AV35 "RF Power Amplifier" RF power amplifier 10mW

    S-AU83L

    Abstract: 5-53P "power amplifier" sau83l
    Text: S-AU83L TOSHIBA RF POWER AMPLIFIER MODULE S-AU83L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AU83L Po32W VDD12 VDD16 -40oducts S-AU83L 5-53P "power amplifier" sau83l