RETS Search Results

TO236 footprint

Abstract: 43a sot23 marking code 10 sot23 PBRN123YK PBRN123YS PBRN123YT SC-43A SC-59A
Contextual Info: PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.

PBRP113ET

Abstract: PBRP113ZT PBRP123YT nxp cross PDTD113ZT PBRN113ET PBRN113ZT PBRN123ET PBRN123YT PBRP123ET
Contextual Info: NXP 800 mA low VCEsat BISS RETs PBRN and PBRP series Low VCEsat (BISS) RETs optimized for automotive and industrial applications Developed specifically for the automotive and industrial markets, these 800 mA resistor-equipped transistors (RETs) combine one or two resistors

CoolRISC 816

Abstract: CH-2007 CR88
Contextual Info: CoolRISC TM Quick reference for the CoolRISC 816 Instruction set Instruction Modification Jump addr 16bits or ip Jcc addr(16bits) or ip Call addr(16bits) or ip Calls addr(16bits) or ip Ret Rets Reti Push Pop Move reg,#data(8bits) Move reg1,reg2 Move reg,eaddr

PDTC113EU

Abstract: PDTA123EE PDTA144EE PUMB16 PEMH15 PEMD4 PDTC113ZU PDTC114EU PUMH15 PUMH20
Contextual Info: Semiconductors Philips’ Resistor-Equipped Transistor RET portfolio Double Resistor-Equipped Transistors SOT457 (SC-74) SOT363 (SC-88) SOT666 Key features • Extensive range - 241 products already released - ~ 400 products will be available in 2004 • Single or dual RETs with large choice of resistor combinations

2n2222 2n5401 2n5551

Abstract: bc107 sot23 bd139 sot23 PHILIPS 2n2222a SOT23 2N3904 sot323 BC108 SOT23 package 2N2369A SOT363 BCY59 cross reference BC108 CROSS REFERENCE BC109 cross reference
Contextual Info: CONVERSION LIST Page General purpose low power 62 Darlingtons 63 Medium power/power 64 Medium frequency 64 Switching 65 High voltage 65 Resistor equipped RETs 66 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE

KRC246S

Abstract: bc817 replacement of all 74 ic series PDTB123Y Digital Transistors Cross Reference PDTD113ZT MSE185 transistors cross reference list NXP REPLACEMENT PDTD123ET
Contextual Info: NXP 500 mA resistorequipped transistors RETs PDTD and PDTB series 500 mA RETs for Automotive applications Developed specifically for the automotive and industrial market, 500 mA RETs combine one or two resistors with a transistor to provide an optimal integrated solution for digital applications.

MARKING CODE G7 NPN SOT23

Abstract: MARKING G7 NPN SOT23 marking 41 sot23 nxp
Contextual Info: PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.

43a sot23

Abstract: PBRN123EK PBRN123ES PBRN123ET SC-43A SC-59A
Contextual Info: PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.

43a sot23

Abstract: PBRN113EK PBRN113ES PBRN113ET SC-43A SC-59A
Contextual Info: PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.

diode marking 7L SOT23

Abstract: PBRN113ZK 43a sot23 marking 43A sot23 marking code 10 sot23 SC-43A SC-59A PBRN113ZS PBRN113ZT
Contextual Info: PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 26 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.

battary backup circuit

Contextual Info: H Y 5316 1 DDA •HYUNDAI 54K N 1 B-blt CMOS FAST SRAM ADVANCED INFORMATION DESCRIPTION HY531B100A Is a high-spBsd 55,536* 15-bils CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS proDBss technology. This high reliability process coupled with high-spæd circuit dBsign lechniqUBS, yÌBlds maximum accBss lima Df 15ns. The HY531B1D0Ahas a data retsntion mede that guarantees data to

CoolRISC 816

Abstract: CR88 Cpl2c CoolRISC
Contextual Info: CoolRISC TM Quick reference for the CoolRISC 816 Instruction set Instruction Modification Jump addr 16bits or ip Jcc addr(16bits) or ip Call addr(16bits) or ip Calls addr(16bits) or ip Ret Rets Reti Push Pop Move reg,#data(8bits) Move reg1,reg2 Move reg,eaddr

TMS34061FNL

Abstract: lad1-5v TMS34070NL S3406 TL 413 SPVU001 MJ340 TA2625
Contextual Info: SM J 3 4 0 1 0 GRAPHICS SYSTEM PROCESSOR NOVEMBER 1 98 8 - • Military Temperature . . . - 5 5 ° C to 12 5°C • Instruction Cycle Time: 200 ns . . . S M J3 4010-40 160 ns . . . S M J3 4010-50 REVISED SEPTEMBER 1989 GB PACKAGE 68-PIN GRID ARRAY TOP VIEW

TranSwitch Corporation

Abstract: B2M1-5
Contextual Info: PHAST-1 Device SONET STS-1 Overhead Terminator TXC-06101 DATA SHEET • Provides SONET interface to any type of payload • Programmable STS-1 or STS-N modes • Receive bit-serial STS-1 signal input to the Line Side using external reference frame pulse for

LM308

Abstract: LM308 application LM308N lm108 LM308 typical applications LM308 National Semiconductor RETS108X LM108H national semiconductor lm308h LM308AH
Contextual Info: LM108,LM208,LM308 LM108/LM208/LM308 Operational Amplifiers Literature Number: SNOSBS5A LM108/LM208/LM308 Operational Amplifiers General Description The LM108 series are precision operational amplifiers having specifications a factor of ten better than FET amplifiers over

m1 250c fuse

Abstract: at32uc3c em 234 stepper dtx 370 DTH block diagram lta 301 VT 546 Modem basic circuit diagram EIC 4021 shift registers 4050
Contextual Info: Features • High Performance, Low Power 32-bit AVR Microcontroller – – – – • • • • • • • • • • • • Compact Single-cycle RISC Instruction Set Including DSP Instruction Set Built-in Floating-Point Processing Unit FPU Read-Modify-Write Instructions and Atomic Bit Manipulation

6206a

Abstract: K-Line transceiver w1p 84 st10f2xx sigma asc 333 24 pin K-line ST10F276E W1P 59 st10 Bootstrap st10273e
Contextual Info: ST10F276E 16-bit MCU with MAC unit 832 Kbyte Flash memory and 68 Kbyte RAM Datasheet − production data Features • ■ ■ ■ ■ ■ Highly performance 16-bit CPU with DSP functions – 31.25ns instruction cycle time at 64MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit

Contextual Info: LF411 LF411 Low Offset, Low Drift JFET Input Operational Amplifier Literature Number: SNOSBH6C LF411 Low Offset, Low Drift JFET Input Operational Amplifier General Description Features These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input offset voltage drift. They require low supply

LP2951

Abstract: LP2952A lp2952im
Contextual Info: LP2952,LP2952A,LP2953,LP2953A LP2952/LP2952A/LP2953/LP2953A Adjustable Micropower Low-Dropout Voltage Regulators Literature Number: SNVS095C LP2952/LP2952A/LP2953/LP2953A Adjustable Micropower Low-Dropout Voltage Regulators General Description Features The LP2952 and LP2953 are micropower voltage regulators

Contextual Info: LMC6062 LMC6062 Precision CMOS Dual Micropower Operational Amplifier Literature Number: SNOS631C LMC6062 Precision CMOS Dual Micropower Operational Amplifier General Description Features The LMC6062 is a precision dual low offset voltage, micropower operational amplifier, capable of precision single

LM10 application note

Abstract: flame detector lm10 applications rets10x National Semiconductor lm10
Contextual Info: LM10 LM10 Operational Amplifier and Voltage Reference Literature Number: SNOSBH4C LM10 Operational Amplifier and Voltage Reference General Description The LM10 series are monolithic linear ICs consisting of a precision reference, an adjustable reference buffer and an

lm662

Contextual Info: LMC662 LMC662 CMOS Dual Operational Amplifier Literature Number: SNOSC51B LMC662 CMOS Dual Operational Amplifier General Description Features The LMC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It operates from +5V to +15V

omap 2530

Abstract: thermocouple lm385 LM385A-2 RETS185H-2
Contextual Info: LM185-2.5,LM285-2.5,LM385-2.5 LM185-2.5/LM285-2.5/LM385-2.5 Micropower Voltage Reference Diode Literature Number: SNVS743C LM185-2.5/LM285-2.5/LM385-2.5 Micropower Voltage Reference Diode General Description The LM185-2.5/LM285-2.5/LM385-2.5 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 20

tea1719

Abstract: PH1930 nds 3 video guard smart card OPTOCOUPLER SMPS for HDD ph1930al PH2530AL ip4223 SMD 8A TRANSISTOR 702 transistor smd code PH6030AL
Contextual Info: Application Guide Notebook Computing Introduction Your partner for notebook computing Designing notebooks isn’t getting any easier. The footprint continues to shrink, and consumers continue to demand more features, faster speeds, on our decades-long leadership in high-performance mixed-signal solutions,