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    PBRN123YS Search Results

    PBRN123YS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PBRN123YS NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm Original PDF
    PBRN123YS,126 NXP Semiconductors Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 700MW TO92-3 Original PDF

    PBRN123YS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original
    PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    TO236 footprint

    Abstract: 43a sot23 marking code 10 sot23 PBRN123YK PBRN123YS PBRN123YT SC-43A SC-59A
    Text: PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.


    Original
    PDF PBRN123Y PBRN123YK OT346 SC-59A O-236 PBRN123YS SC-43A PBRN123YT O-236AB OT54A TO236 footprint 43a sot23 marking code 10 sot23 PBRN123YK PBRN123YT SC-43A SC-59A

    BUK2114

    Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
    Text: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63


    Original
    PDF 1N4148 1N4531 1N47xxA 1PS10SB62 1PS10SB63 1PS10SB82 1PS181 1PS184 1PS193 1PS226 BUK2114 BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52

    MARKING CODE G7 NPN SOT23

    Abstract: MARKING G7 NPN SOT23 marking 41 sot23 nxp
    Text: PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.


    Original
    PDF PBRN123Y PBRN123YK PBRN123YS PBRN123YT SC-59A SC-43A O-236 O-236AB OT346 OT54A MARKING CODE G7 NPN SOT23 MARKING G7 NPN SOT23 marking 41 sot23 nxp

    sc74750

    Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
    Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes


    Original
    PDF OT346 SC-59) sc74750 MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921