RESISTOR QBK Search Results

preamp with bass treble circuit diagrams

Abstract: pc preamp with bass treble circuit diagrams BEST BASS TREBLE CIRCUIT w/ pcb layout bass control in stereo amplifier analog mic preamp Stereo Tone Control BEST BASS TREBLE CIRCUIT E1105 i2c tone volume stereo volume tone
Contextual Info: LM4832 Digitally Controlled Tone and Volume Circuit with Stereo Audio Power Amplifier, Microphone Preamp Stage and National 3D Sound General Description The LM4832 is a monolithic integrated circuit that provides volume and tone bass and treble controls as well as a stereo audio power amplifier capable of producing 250 mW

lm4832n

Abstract: BEST BASS TREBLE CIRCUIT pcb layout microphone preamp AN-450 LM4832 M28B N28B 3D Effect Audio Processor IC DS100014-2 JJ-0357-3RT
Contextual Info: LM4832 Digitally Controlled Tone and Volume Circuit with Stereo Audio Power Amplifier, Microphone Preamp Stage and National 3D Sound General Description The LM4832 is a monolithic integrated circuit that provides volume and tone bass and treble controls as well as a stereo audio power amplifier capable of producing 250 mW

LM4832M

Abstract: microphone preamp LM4832 LM4832N M28B N28B AN-450 ic type tone control mono type with volume bass i2c tone volume dip E1105
Contextual Info: LM4832 Digitally Controlled Tone and Volume Circuit with Stereo Audio Power Amplifier, Microphone Preamp Stage and National 3D Sound General Description Key Specifications The LM4832 is a monolithic integrated circuit that provides volume and tone bass and treble controls as well as a stereo audio power amplifier capable of producing 250 mW

capacitor 100uF 50V

Abstract: resistor 220 ohm resistor qbk PTF 10154 capacitor 10uf DIGIKEY
Contextual Info: PTF 10154 85 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface

Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

AFL Marking

Abstract: MARKING CODE AFL MSOP8 Part marking SUFFIX AFL200-00E AFL002-10E
Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

ericsson 10007

Abstract: ca 3161 e IC
Contextual Info: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization

Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

MARKING CODE AFL

Abstract: MSOP8 Part marking
Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

OZ 960

Abstract: cgs resistor
Contextual Info: PTF 10193 GOLDMOS Field Effect Transistor 12 Watts, 860–960 MHz Description The PTF 10193 is an internally matched, 12–watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This device operates at 60% efficiency with 18 dB typical

2M84G

Contextual Info: SKM 195GB066D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 KL M8 E8 .O 2 JXL M8 E8SZ .03+ 2 KLM8B * 5(+ %41(/<-+( +=(0-@-(G CQQ 7 KCL F .0 2 YQ M8 KQQ F [QQ F ¥ KQ 7 .O 2 JLQ M8 C `+ .0 2 KL M8 KQQ F .0 2 YQ M8 J]Q F [QQ F J[QQ F KQQ F W [Q NNN b JXL

capacitor siemens 4700 35

Contextual Info: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of

resistor qbk

Contextual Info: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11

OZ 960

Abstract: G200
Contextual Info: PTF 10160 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.

Contextual Info: PTF 10107 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The 10107 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts power output. Nitride surface passivation and gold

G200

Abstract: resistor 220 ohm
Contextual Info: PTF 10107 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization

JX - 638

Contextual Info: PTF 10138 60 Watts, 960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a GOLDMOS™ FET intended for amplifier applications to 960 MHz. This 60–watt device operates at 48% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold

G200

Abstract: P4525-ND cgs resistor c7
Contextual Info: GOLDMOS PTF 10107 Field Effect Transistor 5 Watts, 2.0 GHz Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

JMC5701

Abstract: GPS-101-2
Contextual Info: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold

500 watts amplifier schematic diagram

Abstract: G200 gsm amplifier ghz 100 watts amplifier circuit diagram E7020
Contextual Info: GOLDMOS PTF 10138 Field Effect Transistor 60 Watts, 1.0 GHz Description The PTF 10138 is a 60–watt GOLDMOS FET intended for CDMA, TDMA, or GSM amplifier applications from 860-960 MHz. It operates at 55% efficiency with 12.5 dB gain. Nitride surface passivation and

PTF 10138

Abstract: G200
Contextual Info: PTF 10138 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a 60–watt GOLDMOS FET intended for amplifier applications to 860-960 MHz. It operates at 48% efficiency with 12.5 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

G200

Abstract: 500 watts amplifier schematic diagram gsm amplifier Ericsson
Contextual Info: PTF 10138 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a 60–watt GOLDMOS FET intended for CDMA, TDMA, or GSM amplifier applications from 860-960 MHz. It operates at 55% efficiency with 12.5 dB gain. Nitride surface passivation and

diode SKE 1/10

Abstract: G200 0509L OZ 960 S
Contextual Info: PTF 10020 125 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10020 is an internally matched, 125–watt GOLDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. This device operates with 55% efficiency and 12.5 dB gain.

capacitor 0,1 mF 50V

Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
Contextual Info: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization