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    JMC5701

    Abstract: GPS-101-2
    Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


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    PDF PCS6106 1-877-GOLDMOS 1522-PTF JMC5701 GPS-101-2

    Untitled

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


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    PDF PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and


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    PDF JMC5701 220ohm 220ZTR 1-877-GOLDMOS 1522-PTF

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: G200 JMC5701 transistor l 2050
    Text: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS ® FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 13 dB gain. Nitride surface passivation and full gold metallization


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    PDF JMC5701 220ohm 220ZTR 1-877-GOLDMOS 1301-PTF RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ G200 JMC5701 transistor l 2050

    JMC5701

    Abstract: Y 335
    Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


    Original
    PDF PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF JMC5701 Y 335

    JMC5701

    Abstract: 466W capacitor 30 pf
    Text: PTF 10053 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


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    PDF P4525-ND PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF JMC5701 466W capacitor 30 pf

    702 P TRANSISTOR

    Abstract: 702 Z TRANSISTOR G200 JMC5701 ghz 100 watts amplifier circuit diagram capacitor 0.1uf DIGIKEY resistor 220ohm
    Text: GOLDMOS PTF 10041 Field Effect Transistor 12 Watts, 1.99 GHz Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and


    Original
    PDF JMC5701 220ohm 220ZTR 1-877-GOLDMOS 1522-PTF 702 P TRANSISTOR 702 Z TRANSISTOR G200 JMC5701 ghz 100 watts amplifier circuit diagram capacitor 0.1uf DIGIKEY resistor 220ohm