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    AA1A4M-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
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    GA4L3Z(0)-T1-AT Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation
    KA4F3R(0)-T1-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation
    HD1A3M(0)-T1-AZ Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation

    RESISTOR 4.7 K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PUMB15

    Abstract: PUMH15 PUMD15
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD15 NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification 2004 Feb 04 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ


    Original     		PDF MBD128 PUMD15 SCA76 R75/01/pp7 PUMB15 PUMH15 PUMD15

    PUMB15

    Abstract: PUMH15
    Text: DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PUMH15 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification 2003 Oct 09 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ


    Original     		PDF MBD128 PUMH15 SCA75 R75/01/pp7 PUMB15

    PDTC143EK

    Abstract: PDTC143E TC143E PDTC143EE PDTC143EEF PDTC143EM PDTC143ES PDTC143ET PDTC143EU SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product data sheet Supersedes data of 2004 Mar 18 2004 Aug 05 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ


    Original     		PDF PDTC143E R75/09/pp14 PDTC143EK TC143E PDTC143EE PDTC143EEF PDTC143EM PDTC143ES PDTC143ET PDTC143EU SC-75

    PUMB15

    Abstract: PUMH15
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMB15 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ‚ R2 = 4.7 kΩ Product specification 2003 Nov 07 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ‚ R2 = 4.7 kΩ


    Original     		PDF MBD128 PUMB15 SCA75 R75/01/pp7 PUMH15

    ta143e

    Abstract: TA143 PDTC143EK PDTA143EU SC-89 PDTA143E PDTA143EE PDTA143EEF PDTA143EK PDTA143EM
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143E series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product data sheet Supersedes data of 2003 Sep 08 2004 Aug 04 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ


    Original     		PDF PDTA143E R75/07/pp14 ta143e TA143 PDTC143EK PDTA143EU SC-89 PDTA143EE PDTA143EEF PDTA143EK PDTA143EM

    463A

    Abstract: NSBC143EDXV6
    Text: MUN5232DW1, NSBC143EDXV6, NSBC143EDP6 Dual NPN Bias Resistor Transistors R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN5232DW1, NSBC143EDXV6, NSBC143EDP6 DTC143ED/D 463A NSBC143EDXV6

    MUN5332DW1

    Abstract: No abstract text available
    Text: MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 DTC143EP/D MUN5332DW1

    Untitled

    Abstract: No abstract text available
    Text: RT2P02M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2P02M is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=4.7 KΩ , R2=4.7 KΩ


    Original     		PDF RT2P02M RT2P02M 25RTr1RTr2

    PDTA143TEF

    Abstract: SC18 SC-89 marking code 10 free transistor and ic equivalent data PDTA143
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA143TEF PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Product specification 2002 Jan 15 Philips Semiconductors Product specification PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open PDTA143TEF


    Original     		PDF M3D425 PDTA143TEF SCA74 613514/01/pp8 PDTA143TEF SC18 SC-89 marking code 10 free transistor and ic equivalent data PDTA143

    SC18

    Abstract: PDTC143TEF SC-89 M3D425 0912-7 "MARKING CODE 11"
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC143TEF NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Product specification 2002 Jan 15 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open PDTC143TEF


    Original     		PDF M3D425 PDTC143TEF SCA74 613514/01/pp8 SC18 PDTC143TEF SC-89 M3D425 0912-7 "MARKING CODE 11"

    ta143e

    Abstract: PDTA143EU PDTA143E PDTA143EE PDTA143EEF PDTA143EK PDTA143EM PDTA143ES PDTA143ET SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143E series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 2003 Apr 11 2003 Sep 08 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA143E SCA75 R75/06/pp14 ta143e PDTA143EU PDTA143EE PDTA143EEF PDTA143EK PDTA143EM PDTA143ES PDTA143ET SC-75

    PNP TRANSISTOR SOT666

    Abstract: PEMB3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB3 PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open


    Original     		PDF M3D744 SC-75/SC-89 SCA73 613514/01/pp8 PNP TRANSISTOR SOT666 PEMB3

    PEMH7

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH7 NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open FEATURES


    Original     		PDF M3D744 SC-75/SC-89 SCA73 613514/01/pp8 PEMH7

    transistor marking B5

    Abstract: 6 PIN DOUBLE TRANSISTOR PUMB3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMB3 PNP resistor-equipped double transistor; R1 = 4.7 kΩ Product specification 2001 Sep 19 Philips Semiconductors Product specification PNP resistor-equipped double transistor; R1 = 4.7 kΩ FEATURES


    Original     		PDF MBD128 SCA73 613514/01/pp8 transistor marking B5 6 PIN DOUBLE TRANSISTOR PUMB3

    ta143e

    Abstract: PDTA143EU PDTC143EK ta143e w PDTA143E PDTA143EE PDTA143EK PDTA143EM PDTA143ES PDTA143ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143E series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 13 2003 Apr 11 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA143E SCA75 613514/05/pp16 ta143e PDTA143EU PDTC143EK ta143e w PDTA143EE PDTA143EK PDTA143EM PDTA143ES PDTA143ET

    tc143e

    Abstract: PDTC143EK PDTC143E marking code R2 sot23 PDTC143EE PDTC143EEF PDTC143EM PDTC143ES PDTC143ET PDTC143EU
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 2004 Mar 18 2004 Aug 05 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC143E SCA76 R75/09/pp14 tc143e PDTC143EK marking code R2 sot23 PDTC143EE PDTC143EEF PDTC143EM PDTC143ES PDTC143ET PDTC143EU

    Untitled

    Abstract: No abstract text available
    Text: MUN5132DW1, NSBA143EDXV6, NSBA143EDP6 Dual PNP Bias Resistor Transistors R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single


    Original     		PDF MUN5132DW1, NSBA143EDXV6, NSBA143EDP6 DTA143ED/D

    tc143e

    Abstract: PDTC143EK PDTC143E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 2003 Sep 10 2004 Jan 12 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC143E SCA76 R75/07/pp14 tc143e PDTC143EK

    tc143e

    Abstract: PDTC143EK PDTC143EEF PNP tc143e PDTA143 PDTC143E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 2004 Jan 12 2004 Mar 18 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC143E SCA76 R75/08/pp14 tc143e PDTC143EK PDTC143EEF PNP tc143e PDTA143

    tc143e

    Abstract: PDTC143ET PDTC143EK PDTC143E PDTC143EU SC-101 SC-75 PDTC143EE PDTC143EM PDTC143ES
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC143E SCA75 613514/05/pp16 tc143e PDTC143ET PDTC143EK PDTC143EU SC-101 SC-75 PDTC143EE PDTC143EM PDTC143ES

    PDTC143EK

    Abstract: PDTC143E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC143E PDTC143ET PDTC143EU PDTC143EE PDTC143EK

    Untitled

    Abstract: No abstract text available
    Text: FJV3101R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 4.7 kΩ • Complement to FJV4101R Application • Switching Application (Integrated Bias Resistor)


    Original     		PDF FJV3101R FJV4101R OT-23 FJV3101RMTF OT-23 FJV3101R

    Untitled

    Abstract: No abstract text available
    Text: FJV4101R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 4.7 kΩ • Complement to FJV3101R Application • Switching Application (Integrated Bias Resistor)


    Original     		PDF FJV4101R FJV3101R OT-23 FJV4101RMTF OT-23

    Untitled

    Abstract: No abstract text available
    Text: FJV4101R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 4.7 kΩ • Complement to FJV3101R Application • Switching Application (Integrated Bias Resistor)


    Original     		PDF FJV4101R FJV3101R OT-23 FJV4101RMTF OT-23 FJV4101R