Untitled
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F 6 DATE 28 APR 2005 1 SCALE 4:1 D −X− 6 5 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
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OT-563,
63A-01
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Untitled
Abstract: No abstract text available
Text: Luckylight 6.22mmx3.68mm Rectangular Type Amber LED Technical Data Sheet Part No.: LL-463ADS Spec No.: 463 Rev No: V.3 Date: Nov./28/2006 Approved: ZHOU Checked: Wu Drawn: Shu Lucky Light Electronics Co., Ltd. Page: 1 OF 7 http://www.luckylight.cn Luckylight
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LL-463ADS
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sot-36
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT–563, 6 LEAD CASE 463A–01 ISSUE O SCALE 4:1 A –X– 5 6 1 2 K 4 B –Y– 3 D EMITTER 1 BASE 1 COLLECTOR 2 EMITTER 2 BASE 2 COLLECTOR 1 STYLE 2: PIN 1. 2. 3. 4. 5. 6. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI
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463a
Abstract: No abstract text available
Text: Filename: tfs 463a.doc Version 1.4 VI TELEFILTER 01.03.2005 Filter specification TFS 463A 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: * Input: Output: 23 °C dBm 228 Ω | -1.25 pF 228 Ω | -1.25 pF Characteristics
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SZNUP4114HMR6T1G
Abstract: MARKING D7 SOT363 MARKING d5 SOT363 marking X2 NUP4114HMR6T1G marking code p4 TSOP6 marking D3 TSOP-6
Text: NUP4114 Series, SZNUP4114HMR6T1G Transient Voltage Suppressors ESD Protection Diodes with Low Clamping Voltage http://onsemi.com The NUP4114 transient voltage suppressors are designed to protect high speed data lines from ESD. Ultra−low capacitance and high level
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NUP4114
SZNUP4114HMR6T1G
SC-88
IEC61000-4-2
AEC-Q101
NUP4114/D
MARKING D7 SOT363
MARKING d5 SOT363
marking X2
NUP4114HMR6T1G
marking code p4 TSOP6
marking D3 TSOP-6
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SBAS16DXV6T1G
Abstract: No abstract text available
Text: BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G Dual Switching Diode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements Pb−Free Packages are Available
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BAS16DXV6T1,
BAS16DXV6T5,
SBAS16DXV6T1G
AEC-Q101
OT-563
BAS16DXV6/D
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bc 147 transistor
Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
Text: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits
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OCR Scan
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0Q0D014
O-106
O-237
bc 147 transistor
transistor BC 547B
transistor BC 147
Transistor BC 547, CL 100
bc 104 npn transistor
bc 106 transistor
transistor BC 337-25
TO106 transistor
bc 337-25 transistor
transistor BC 147b
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Untitled
Abstract: No abstract text available
Text: MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5311DW1,
NSBC114EPDXV6,
NSBC114EPDP6
DTC114EP/D
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NSBC113EPDXV6T1
Abstract: No abstract text available
Text: MUN5330DW1, NSBC113EPDXV6 Complementary Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5330DW1,
NSBC113EPDXV6
DTC113EP/D
NSBC113EPDXV6T1
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BAV70DXV6T1
Abstract: BAV70DXV6T5
Text: BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode • Lead-Free Solder Plating http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc
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BAV70DXV6T1,
BAV70DXV6T5
BAV70DXV6T1
BAV70DXV6T1/D
BAV70DXV6T1
BAV70DXV6T5
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BC847
Abstract: BC847CDXV6T1 BC847CDXV6T1G BC847CDXV6T5G BC848 BC848CDXV6T1 BC848CDXV6T1G
Text: BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications.
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BC847CDXV6T1G,
BC847CDXV6T5G,
BC848CDXV6T1G
OT-563
BC847CDXV6T1
BC847
BC848
BC847CDXV6T1/D
BC847
BC847CDXV6T1
BC847CDXV6T1G
BC847CDXV6T5G
BC848
BC848CDXV6T1
BC848CDXV6T1G
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Untitled
Abstract: No abstract text available
Text: EMD4DXV6T1, EMD4DXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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OT-563
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earth leakage circuit
Abstract: 15.927 Breaker FI 15.932 15.930
Text: FI EARTH LEAKAGE CIRCUIT BREAKERS FI compact Earth Leakage Circuit Breakers detect and interrupt earth ground faults. They are VDE approved for the European system of protecting people, animals, equipment and property from dangerous line-to-ground and shock
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300mA
earth leakage circuit
15.927
Breaker FI
15.932
15.930
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Untitled
Abstract: No abstract text available
Text: MUN5316DW1, NSBC143TPDXV6 Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5316DW1,
NSBC143TPDXV6
DTC143TP/D
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Untitled
Abstract: No abstract text available
Text: MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5211DW1,
NSBC114EDXV6,
NSBC114EDP6
DTC114ED/D
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NTZD3152PT1G
Abstract: NTZD3152P NTZD3152PT5G
Text: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices
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NTZD3152P
OT-563
NTZD3152P/D
NTZD3152PT1G
NTZD3152P
NTZD3152PT5G
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Untitled
Abstract: No abstract text available
Text: NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices
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NTZD5110N
NTZD5110N/D
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resistor
Abstract: PEMD4 PEMD13 Cross Reference resistor cross reference EMA8 PEMB10 PEMD6 NL17SZ02XV5T2 NL17SZ07XV5T2
Text: SOT5xx Cross Reference LOGIC MiniG LCX OVT Logic MiniGates ON ~ ~ ~ ~ NL17SZ00XV5T2 2 Input NAND 463B TC7SZ00AFE ~ ~ ~ ~ NL17SZ02XV5T2 2 Input NOR 463B TC7SZ02AFE ~ ~ ~ ~ NL17SZ04XV5T2 Single Inverter 463B TC7SZ04AFE ~ ~ ~ ~ NL17SZU04XV5T2 Unbuffered Inverter
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NL17SZ00XV5T2
TC7SZ00AFE
NL17SZ02XV5T2
TC7SZ02AFE
NL17SZ04XV5T2
TC7SZ04AFE
NL17SZU04XV5T2
TC7SZU04AFE
NL17SZ06XV5T2
NL17SZ07XV5T2
resistor
PEMD4
PEMD13
Cross Reference
resistor cross reference
EMA8
PEMB10
PEMD6
NL17SZ02XV5T2
NL17SZ07XV5T2
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Untitled
Abstract: No abstract text available
Text: RP - Series RCCB Earth Leakage Circuit Breakers RCCb Series compact Earth Leakage Circuit Breakers detect and interrupt earth ground faults. They are VDE approved for the European system of protecting people, animals, equipment and proper ty from dangerous
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RP2101
300mA
RP2203
RP2230
500mA
RP4203
RP4230
RP4250
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NSBA113EDXV6T1
Abstract: NSBA114EDXV6T1 NSBA114EDXV6T5 NSBA114TDXV6T1 NSBA114YDXV6T1 NSBA124EDXV6T1 NSBA143TDXV6T1 NSBA144EDXV6T1
Text: NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSBA114EDXV6T1,
NSBA114EDXV6T5
NSBA114EDXV6T1
OT-563
NSBA114EDXV6/D
NSBA113EDXV6T1
NSBA114EDXV6T1
NSBA114TDXV6T1
NSBA114YDXV6T1
NSBA124EDXV6T1
NSBA143TDXV6T1
NSBA144EDXV6T1
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NUF2230XV6
Abstract: NUF2230XV6T1 NUF2230XV6T1G
Text: NUF2230XV6 2 Line EMI Filter with ESD Protection This device is a 2 line EMI filter array for wireless applications. Greater than −30 dB attenuation is obtained at frequencies from 800 MHz to 900 MHz. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all
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NUF2230XV6
IEC61000-4-2
OT-563
NUF2230XV6/D
NUF2230XV6
NUF2230XV6T1
NUF2230XV6T1G
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SL64G4B4M2E-A60
Abstract: No abstract text available
Text: 144-PIN SO-DIMMS SL64G4B4M2E-A60 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC tRAC 60ns • • • • • • • • 15ns 104ns The SiliconTech SL64G4B4M2E-A60 is a 4M x 64 bits Dynamic RAM high density memory module. The SiliconTech
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144-PIN
SL64G4B4M2E-A60
104ns
SL64G4B4M2E-A60
24-pin
300-mil
DQ20-23
A0-A10
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Untitled
Abstract: No abstract text available
Text: NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST30010MXV6T1G,
NSVT30010MXV6T1G
OT563
NST30010MXV6/D
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Untitled
Abstract: No abstract text available
Text: NSR0320XV6T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features http://onsemi.com • Low Forward Voltage − 0.35 V Typ @ IF = 10 mAdc • High Current Capability
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NSR0320XV6T1
NSR0320XV6T1/D
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