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    RD6.8J Price and Stock

    Rochester Electronics LLC RD6.8JS-AZ

    DIODE ZENER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RD6.8JS-AZ Bulk 5,413
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    Rochester Electronics LLC RD6.8JS-T1-AZ

    DIODE ZENER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RD6.8JS-T1-AZ Bulk 5,413
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    Renesas Electronics Corporation RD6.8JS-T1-AZ

    DO-34 Package Low noise, Sharp Breakdown characteristics 400 uW Zener Diode
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RD6.8JS-T1-AZ 42,000 6,623
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    RD6.8JS-T1-AZ 24,000 6,623
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    Rochester Electronics RD6.8JS-T1-AZ 66,000 1
    • 1 $0.0533
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    • 1000 $0.0453
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    Renesas Electronics Corporation RD6.8JS-AZ

    DO-34 Package Low noise, Sharp Breakdown characteristics 400 uW Zener Diode
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RD6.8JS-AZ 14,600 6,623
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    • 10 -
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    • 1000 -
    • 10000 $0.0566
    		Buy Now
    Rochester Electronics RD6.8JS-AZ 14,800 1
    • 1 $0.0533
    • 10 $0.0533
    • 100 $0.0501
    • 1000 $0.0453
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    RD6.8J Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RD6.8J Unknown Cross Reference Datasheet Scan PDF
    RD6.8J Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    RD6.8JB Unknown Cross Reference Datasheet Scan PDF
    RD6.8JB1 Unknown Cross Reference Datasheet Scan PDF
    RD6.8JB2 Unknown Cross Reference Datasheet Scan PDF
    RD6.8JB3 Unknown Cross Reference Datasheet Scan PDF
    RD6.8JS NEC Semiconductor Selection Guide 1995 Original PDF
    RD6.8JS NEC DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode Original PDF
    RD6.8JSAB EIC Semiconductor Zener Diodes Original PDF
    RD6.8JSAB1 EIC Semiconductor Zener Diodes Original PDF
    RD6.8JSAB2 EIC Semiconductor Zener Diodes Original PDF
    RD6.8JSAB3 EIC Semiconductor Zener Diodes Original PDF
    RD6.8JS-T1 NEC Zener diode Original PDF
    RD6.8JS-T2 NEC Zener diode Original PDF
    RD6.8JS-T4 NEC Zener diode Original PDF

    RD6.8J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 PDF

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    RD16JS

    Abstract: RD10JS RD11JS RD12JS RD13JS RD15JS RD18JS RD39JS RD51 1b2 zener
    Text: データ・シート 定電圧ダイオード Zener Diodes RD4.7JS~RD39JS 400 mWプレーナ形小形パッケージ DHD構造シリコン定電圧ダイオード RD4.7JS∼RD39JSは許容損失400 mWのプレーナ形ガラス封止DHD 外形図（単位：mm）


    Original     		7JSRD39JS 7JSRD39JS400 7JSRD39JSABAB1AB3 DO-34JEDEC D13937JJ5V0DS00 SC-5023C RD16JS RD10JS RD11JS RD12JS RD13JS RD15JS RD18JS RD39JS RD51 1b2 zener PDF

    zener diode RD2.2S

    Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
    Text: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ


    Original     		RD10UJ RD11UJ RD12UJ RD13UJ RD15UJ RD16UJ RD18UJ RD20UJ RD22UJ RD24UJ zener diode RD2.2S RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P PDF

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro PDF

    1537-AB

    Abstract: RD10JS RD11JS RD12JS RD13JS RD15JS RD39JS
    Text: TH97/10561QM RD4.7JS ~ RD39JS TW00/17276EM IATF 0060636 SGS TH07/1033 SILICON ZENER DIODES DO - 34 Glass VZ : 4.7 - 39 Volts PD : 400 mW 1.00 25.4 min. 0.078 (2.0 )max. FEATURES : 0.118 (3.0) max. Cathode Mark * Complete 4.7 to 39 Volts * High peak reverse power dissipation


    Original     		TH97/10561QM RD39JS TW00/17276EM TH07/1033 DO-34 Temperature21 RD36JS RD33JS RD30JS 1537-AB RD10JS RD11JS RD12JS RD13JS RD15JS RD39JS PDF

    zener diode B3

    Abstract: rd 62 nec zener B2 Zener zener series RD zener diode numbering system 2248 IR 845 NEC 2532 n 749 B1 7 zener RD6.8ES-T1-AZ(AB2) general purpose zener diode ro
    Text: ZENER DIODE RD [ ] JS, RD [ ] ES, RD [ ] E, RD [ ] F CHARACTERISTICS & RELIABILITY 1. INTRODUCTION NEC introduced products of Zener diodes in RD [ ] Series early in Japan and then increased their product lines from RD [ ] A to RD [ ] D. High reliability performance proved with our Zener diodes has been highly evaluated


    Original     		PDF

    NEC 10F triac

    Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
    Text: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2


    Original     		G10748EJDV0SG00 NEC 10F triac 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272 PDF

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


    Original     		PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157 PDF

    RD16JS

    Abstract: RD10JS RD11JS RD12JS RD13JS RD15JS RD18JS RD39JS 864A-B zener rd9.1esb2
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		7JSRD39JS 7JSRD39JS400 7JSRD39JSABAB1AB3 DO-34JEDEC RD16JS RD10JS RD11JS RD12JS RD13JS RD15JS RD18JS RD39JS 864A-B zener rd9.1esb2 PDF

    RD10JS

    Abstract: RD11JS RD12JS RD13JS RD15JS RD16JS RD39JS 2JS marking NEC RD4.7JS RD5.1JS
    Text: DATA SHEET ZENER DIODES RD4.7JS to RD39JS DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode DESCRIPTION NEC Type RD [ ] JS series are DHD Double Heatsink Diode construction Mini Package (DO-34; Body length 2.4 mm Max.) possessing


    Original     		RD39JS DO-34 DO-34; RD39JS RD10JS RD11JS RD12JS RD13JS RD15JS RD16JS 2JS marking NEC RD4.7JS RD5.1JS PDF

    RD5.1J

    Abstract: zener rd9.1esb2 RD6.8ES-T1-AZ(AB2)
    Text: RD4.7JS-RD39JS Silicon Zener Diodes VZ : 4.7 - 39 Volts PD : 400 mW DO - 34 Glass Features — — — — — Complete 4.7 to 39 Volts High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free Mechanical Data — — Case: DO-34 Glass Case


    Original     		7JS-RD39JS DO-34 RD16JS RD18JS RD20JS RD22JS RD24JS RD27JS RD30JS RD33JS RD5.1J zener rd9.1esb2 RD6.8ES-T1-AZ(AB2) PDF

    uPD3599

    Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117 PDF

    RD10JS

    Abstract: RD11JS RD12JS RD13JS RD15JS RD16JS RD39JS NEC zener diode 35 series suffix renesas marking AB2 diode
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503 PDF

    diodos

    Abstract: R024M R082F 1S963 1SS53 RD27E 5w r010j r010j RD27F RD100E
    Text: TT* KJ Dioaes i — • Zonor D iod os DHO C o nstruction P lan ar Typo • S w itch in g D iod os V r (V) 30 50 75 30 50 75 Typo No. 1S963 1S954 1S955 1SS53 1SS54 1SS55 lo (mA) 100 200 200 100 100 100 P -0 .4 W • Tw in Diodas Typo No. 152835 152836 152837


    OCR Scan     		1S963 1S964 1S955 1SS53 1SS54 1SS55 RD10M RD11M RD12M RD13M diodos R024M R082F RD27E 5w r010j r010j RD27F RD100E PDF

    RD13M

    Abstract: RD2.4M 1SS53 zener rd9.1eb
    Text: N E C ELECTRONICS INC E Diodes S=IC D ~'r 9m •ÈÜ t>427555 O D D b l D E VR V 30 50 75 30 50 75 lo (mA) 100 200 200 100 100 100 VR(V) '30 50 30 50 I f (mA) 150 (100) 150 (100) 150 (100) 150 (100) P = 0.4W Common Anode Common Cathode Common • Zener Diodes (Mini-Mold Type)


    OCR Scan     		1S953 1S954 1S955 1SS53 1SS54 1SS55 RD10E RD11E RD12E RD13E RD13M RD2.4M zener rd9.1eb PDF

    56jb

    Abstract: RD4.7JB RD5.1J NEC zener diode 35 series RD51JB RD6.8JB nec zener diode RD20JB zener rd9.1esb2 zener rd9.1eb
    Text: SEC ELECTRON DEVICE R D 4 .7 J B — R D 3 9 J B L o w noise. S h a rp B re a k d o w n ch a ra c te ris tic s 4 0 0 m w Z en er D iode. NEC Type R D []J series are D H D Double Heatsink Diode con struction planar typ e Zener diode possessing an allow able power dissipation o f 400mW , featuring low noise and sharp breakdown characteristic. They are


    OCR Scan     		400mW DO-35 40msl 56jb RD4.7JB RD5.1J NEC zener diode 35 series RD51JB RD6.8JB nec zener diode RD20JB zener rd9.1esb2 zener rd9.1eb PDF

    RD5.6S

    Abstract: 610C 3420B
    Text: - 250 - y X *1 £E B S % tt P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l b i B1 min typ 400 400 SOO 200 200 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 4. 8 4.82 4.81 4.82 5.3 5. 1 Vz <D X SÜÆ Vz (V) lz max Iz <mA) Zzmax (fi) M it I z(mA) 5. 37


    OCR Scan     		40iis-e i15-0 25MIN RD5.6S 610C 3420B PDF

    3420B

    Abstract: RD5.6S 610C RD6.8E
    Text: - 250 - y X *1 £E B S % tt P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l b i B1 min 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 4. 8 4.82 4.81 4.82 5.3 5. 1 RD5.IP RD5. IS RD5.1UJ RD5.1ÜM RD5. 6E B1 B l B l am 1W 200 150 150 500 RD5. 6BS RD5.6F


    OCR Scan     		40iis-e sc-11 -28UNF-2AT i042U SC-11U 27MIN 27M1N 27MIN 73MIN 3420B RD5.6S 610C RD6.8E PDF

    U 420B

    Abstract: RD5.6S 610C RD5D
    Text: - 250 - y X *1 £E B S % tt P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l b i B1 min 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 4. 8 4.82 4.81 4.82 5.3 5. 1 RD5.IP RD5. IS RD5.1UJ RD5.1ÜM RD5. 6E B1 B l B l am 1W 200 150 150 500 RD5. 6BS RD5.6F


    OCR Scan     		40iis-e SiS40insT- 40nist-aiJS, iS40ns U 420B RD5.6S 610C RD5D PDF

    RD5.6S

    Abstract: RD5D 610C
    Text: - 250- y X *1 £E B S tt % P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l min typ Vz <D X SÜÆ Vz (V) lz max Iz <mA) Zzmax (fi) M it I z(mA) 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 B1 400 400 SOO 200 200 5. 37 5.37 5. 35 5. 4 5.37 5 5 5 5


    OCR Scan     		40iis-e avz00 SiS40insT- 40nist-aiJS, iS40ns RD5.6S RD5D 610C PDF

    RD5.6S

    Abstract: 610C ic um 3481
    Text: - 250 - y X *1 £E B S % tt P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l b i B1 min 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 4. 8 4.82 4.81 4.82 5.3 5. 1 RD5.IP RD5. IS RD5.1UJ RD5.1ÜM RD5. 6E B1 B l B l am 1W 200 150 150 500 RD5. 6BS RD5.6F


    OCR Scan     		40iis-e RD5.6S 610C ic um 3481 PDF