RBV600D Search Results

CL-200 IR

Abstract: 604D JEC 400 600D 601D 602D RBV600D RBV610D
Contextual Info: 5YNSEMI SEMICONDUCTOR RBV600D - RBV610D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts lo : 6.0 Amperes 3. 9 ± 0. 2C3 30 ±0.3 4.9 ± 0. 2 - FEATURES: * * * * * * * * 0 3. 2 ± 0.1 High current capability High surge current capability High reliability

600D

Abstract: 601D 602D 604D RBV600D RBV610D
Contextual Info: RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC

604D

Abstract: 602D 600D 601D RBV600D RBV610D
Contextual Info: RBV600D - RBV610D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 6.0 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 FEATURES : ∅ 3.2 ± 0.1 ~ ~ 1.0 ± 0.1 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability

604D

Abstract: 600D 601D 602D RBV600D RBV610D
Contextual Info: RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes RBV25 3.9 ± 0.2 30 ± 0.3 C3 FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC

Contextual Info: TH09/2479 TH97/2478 RBV600D - RBV610D IATF 0113686 SGS TH07/1033 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 6.0 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 + ~~ 1.0 ± 0.1 10 7.5 7.5 ± 0.2 ±0.2 ±0.2 MECHANICAL DATA : * Case : Reliable low cost construction

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RBV600D - RBV610D SILICON BRIDGE RECTIFIERS