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    RAS 510 Search Results

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    RAS 510 Price and Stock

    Murata Manufacturing Co Ltd IRA-S510ST01

    INFRARED SENSOR
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    DigiKey IRA-S510ST01 Box 53 1
    • 1 $3.31
    • 10 $2.421
    • 100 $3.31
    • 1000 $1.58149
    • 10000 $1.44737
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    Avnet Americas IRA-S510ST01 Box 10 Weeks 100
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    • 10 -
    • 100 $1.35396
    • 1000 $1.35396
    • 10000 $1.35396
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    Mouser Electronics IRA-S510ST01 100
    • 1 $3.39
    • 10 $2.3
    • 100 $1.66
    • 1000 $1.42
    • 10000 $1.31
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    Newark IRA-S510ST01 Bulk 73 1
    • 1 $3.46
    • 10 $2.38
    • 100 $1.75
    • 1000 $1.53
    • 10000 $1.53
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    Avnet Abacus IRA-S510ST01 27 Weeks 100
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    Same Sky SLW-18115106-5A-RA-S-D

    Slide Switches 18 x 11.5 x 10.6 mm, 5 mm Raised Slide Actuator, Right Angle, Through Hole
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SLW-18115106-5A-RA-S-D 984
    • 1 $0.53
    • 10 $0.517
    • 100 $0.431
    • 1000 $0.326
    • 10000 $0.272
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    KEMET Corporation C44PUGR5100RASK

    Film Capacitors 780VAC 10uF 10% AC Filter Can
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C44PUGR5100RASK 21
    • 1 $65.22
    • 10 $48.17
    • 100 $44.1
    • 1000 $42
    • 10000 $42
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    Chip Quik Inc RASW.015 100g

    Soldering Flux
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RASW.015 100g
    • 1 $15.53
    • 10 $15.12
    • 100 $15.12
    • 1000 $15.12
    • 10000 $15.12
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    Vishay Intertechnologies BYW76RAS15-10

    Rectifiers AVALANCHE DIODE SOD64 STD-e2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BYW76RAS15-10
    • 1 -
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    • 10000 $0.497
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    RAS 510 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UG12M23601PBG-6IB 8M Bytes 2M x 36 DRAM 72Pin SIMM based on 1M X 16 General Description Features • • • • • • • • • • Single +5 volt power supply Fast- page Mode (FPM) operation Low power dissipation RAS only refresh cycles CAS before RAS refresh cycles


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    UG12M23601PBG-6IB 72Pin UG12M23601PBG-6IB 1000mil) 74G1188 PDF

    UG9M43602KBG-6

    Abstract: 74g1188
    Text: UG9M43602KBG-6IB 16M Bytes 4M x 36 DRAM 72Pin SIMM based on 4M X 4 General Description Features • • • • • • • • • • Single +5 volt power supply Fast- page Mode (FPM) operation Low power dissipation RAS only refresh cycles CAS before RAS refresh cycles


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    UG9M43602KBG-6IB 72Pin UG9M43602KBG-6IB 300mil 1000mil) 74G1188 UG9M43602KBG-6 74g1188 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG51C6414EJ T G 8M Bytes (1M x 64) DRAM 168Pin DIMM based on 1M x 4 General Description Features • Single 5.0V +/- 10% power supply • Fast Page Mode (FPM) operation • CAS-before-RAS Refresh operation • RAS-only and Hidden Refresh capability • 1024 refresh cycles every 16 ms


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    UG51C6414EJ 168Pin 300mil ABT16244 240mil 168-pin 1000mil) 540Min) PDF

    lan rj45 color code diagram

    Abstract: NTP 7100 128X64 graphical LCD screen RTL8111 Realtek PCIe GBE Family Controller cn5010 16 pin diagram of lcd display 16x2 CN5020 Realtek RTL8111 SL3516
    Text: Complete Your Networld www.cas-well.com 3G Wireless Wireless Gateway Media Server VoIP, Video/Image Processing Network Management ( RAS, QoS, Load Balancing ) Security ( Firewall/VPN, IDS/IPS, Anti-Virus, TABLE of CONTENTS 2 4 9 About CA Reference Table


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    PMG-7095 NAR-7100 NAR-7090 NAR-5650 M090507 lan rj45 color code diagram NTP 7100 128X64 graphical LCD screen RTL8111 Realtek PCIe GBE Family Controller cn5010 16 pin diagram of lcd display 16x2 CN5020 Realtek RTL8111 SL3516 PDF

    shockley diode

    Abstract: diode shockley shockley diode application shockley diode datasheet GA07 Sharp Semiconductor Lasers Quantum Effect Devices 121017 GA04
    Text: Effect of Free-Carrier Absorption on Performance of 808 nm High-Power Laser Diodes K A Bulashevich1,2 , V F Mymrin2 , and S Yu Karpov2,3 1 2 3 Ioffe Physico-Technical Institute, RAS, St.Petersburg, 194021 Russia Soft-Impact, Ltd., P.O.Box 83, St.Petersburg, 194156 Russia


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    laser14] R1-29 shockley diode diode shockley shockley diode application shockley diode datasheet GA07 Sharp Semiconductor Lasers Quantum Effect Devices 121017 GA04 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG52W7416GSG 16M Bytes 2M x 72 DRAM 168Pin DIMM With ECC based on 1M x 16 General Description Features Single 3.3 +/- 0.3V power supply Hyper-Page Mode (EDO) capability CAS-before-RAS Refresh capability 1024 refresh cycles every 16 ms 10/10 Addressing (Row / Column)


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    UG52W7416GSG 168Pin UG52W7416GSG 1Mx16 44-pin 1000mil) 350Max 89Max 540Min) PDF

    B456 F 15

    Abstract: B456 1S456 IS456 50n25
    Text: 1S456 1S456 Huh Speed Res~se Type OPIC Light Detector • F-ras 1. High speed response b~~ : TYP.230ns 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package ¤ouuina~ (Unit : mm) ■ Amti


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    1S456 230ns) IS456 B456 F 15 B456 1S456 IS456 50n25 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG532W7288JSR 32M x 72 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 16M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT Front View 168-Pin DIMM FEATURES Single 3.3V ± 10% power supply Hyper Page Mode (EDO) operation CAS-before-RAS Refresh capability


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    UG532W7288JSR 1250mil) 168-Pin PDF

    C503B-ACS-CX0Y0252

    Abstract: C503B-ACN-CX0Y0252 C503B-RAN-CY0B0AA2
    Text: CLD-CT1079.003 PRODUCT FAMILY DATA SHEET Cree 5-mm Red and Amber Round LED C503B-RAS/RAN/AAS/AAN C503B-RBS/RBN/ABS/ABN C503B-RCS/RCN/ACS/ACN PRODUCT DESCRIPTION FEATURES APPLICATIONS Round LEDs offer superior light out- • Size mm : 5 • • Color and Typical Dominant


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    CLD-CT1079 C503B-RAS/RAN/AAS/AAN C503B-RBS/RBN/ABS/ABN C503B-RCS/RCN/ACS/ACN 624nm) 591nm) C503B-RAS/RAN: C503B-RBS/RBN: C503B-RCS/RCN: C503B-AAS/AAN: C503B-ACS-CX0Y0252 C503B-ACN-CX0Y0252 C503B-RAN-CY0B0AA2 PDF

    C503B-RAS-CY0B0AA1

    Abstract: No abstract text available
    Text: CLD-CT1079.004 PRODUCT FAMILY DATA SHEET Cree 5-mm Red and Amber Round LED C503B-RAS/RAN/AAS/AAN C503B-RBS/RBN/ABS/ABN C503B-RCS/RCN/ACS/ACN PRODUCT DESCRIPTION FEATURES APPLICATIONS Round LEDs offer superior light out- • Size mm : 5 • • Color and Typical Dominant


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    CLD-CT1079 C503B-RAS/RAN/AAS/AAN C503B-RBS/RBN/ABS/ABN C503B-RCS/RCN/ACS/ACN 624nm) 591nm) C503B-RAS/RAN: C503B-OT C503B-RAS-CY0B0AA1 PDF

    LXXXXXXXX

    Abstract: C503B-ACN-CX0Y0251 C503B-RAN-CY0B0AA2
    Text: Cree 5mm Red and Amber Round LED C503B-RAS/RAN/AAS/AAN 15 degree C503B-RBS/RBN/ABS/ABN (23 degree) C503B-RCS/RCN/ACS/ACN (30 degree) Data Sheet Round LEDs offer superior light output for excellent readability in sunlight and dependable performance. It provides extremely stable light output over long


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    C503B-RAS/RAN/AAS/AAN C503B-RBS/RBN/ABS/ABN C503B-RCS/RCN/ACS/ACN CLD-CT1079 LXXXXXXXX C503B-ACN-CX0Y0251 C503B-RAN-CY0B0AA2 PDF

    C503B-ACN-CW0Y0251

    Abstract: ACS 3000 A rbs 3000 C503B-ACN-CW0X0341 cree uv LED C503B-RAN-CY0B0AA1 C503B-RCN-CW0Z0AA2 C503B-RAN-CY0B0AA2 C503B-RCN-CW0Z0AA1 RBS 200
    Text: Cree 5mm Red and Amber Round LED C503B-RAS/RAN/AAS/AAN 15 degree C503B-RBS/RBN/ABS/ABN (23 degree) C503B-RCS/RCN/ACS/ACN (30 degree) Data Sheet Round LEDs offer superior light output for excellent readability in sunlight and dependable performance. It provides extremely stable light output over long


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    C503B-RAS/RAN/AAS/AAN C503B-RBS/RBN/ABS/ABN C503B-RCS/RCN/ACS/ACN CLD-CT1079 C503B-ACN-CW0Y0251 ACS 3000 A rbs 3000 C503B-ACN-CW0X0341 cree uv LED C503B-RAN-CY0B0AA1 C503B-RCN-CW0Z0AA2 C503B-RAN-CY0B0AA2 C503B-RCN-CW0Z0AA1 RBS 200 PDF

    Untitled

    Abstract: No abstract text available
    Text: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write


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    S4C14405 26/20-pin AS4C14405-60JC 26/20-pin 0Q34HC PDF

    Untitled

    Abstract: No abstract text available
    Text: SMJ44C251B 262144 BY 4-BIT MULTIPORT VIDEO RAM SGMS058A - MARCH 1995 - REVISED JUNE 1995 • Military Operating Temperatur« Range - 55°C to 125°C • Enhanced Page-Mode Operation for Faster Access • Performance Ranges: • CAS-Before-RAS CBR and Hidden


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    SMJ44C251B SGMS058A 44C251B-10 44C251B-12 33-MHz PDF

    32MB SIMM

    Abstract: ibm dram
    Text: IBM11D4360E IBM11D8360E IBM11E4360E IBM11E8360E 4M/8M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: : -60 I rac i RAS Access Tim e tcAc CAS Access Tim e : Ua A ccess Tim e From Address I rc Cycle Tim e tpc : 60ns : -70


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    IBM11D4360E IBM11D8360E IBM11E4360E IBM11E8360E 72-Pin 110ns 130ns 32MB SIMM ibm dram PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 311 7800BSJ L -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC CAS access time


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    7800BSJ PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0164805B IBM0164805P P re lim in a ry 8 M x 8 13/10 ED O DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode -5 0 tRAc • CAS before RAS Refresh


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    IBM0164805B IBM0164805P 128ms 256ms 104ns IBM0164805P 0-05tS PDF

    PP-02-47

    Abstract: No abstract text available
    Text: SIEMENS 4M X 16-Bit Dynamic RAM 4k & 8k Refresh HYB 3164160T -50/-60 HYB 3165160T -50/-60 Prelim inary Inform ation • 4 194 304 words by 16-bit organization • 0 to 70 'C operating temperature ■ Fast access and cycle time RAS access time: 50 ns (-50 version)


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    16-Bit 3164160T 3165160T 3164160T-50) 3164160T-60) 3165160T-50) 3165160T-60) read-1-1/016 160T-50/-60 PP-02-47 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 4M X 4-Bit EDO-Dynamic RAM 2k & 4k-Refresh HYB 3116405BJ/BT L -50/-60/-70 HYB 3117405BJ/BT(L) -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance ÍRAC RAS access time


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    3116405BJ/BT 3117405BJ/BT 3117405BJ/BT-50) 3117405BJ/BT-60) 3117405BJ/BT-70) 405BJ/BT P-SOJ-26/24-1 85max 6235bD5 00flb PDF

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 D 2 3 2 5 H 2M x 32 DRAM Module Features Thin outline .104” Single 5V ± 0.5V Power Supply Low current consumption All inputs & outputs are fully TTL & CMOS compatible Extended Data Out (EDO) access cycle Refresh Modes: RAS-Only, CBR, and Hidden


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    72-Pin 104ns 124ns 0QD213M 1D2325H PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 - 1 5 Bub interface 5.1 Bus Control General The processor provides on-chip all functions to control memory and peripheral devices, including RAS-CAS multiplexing, DRAM refresh and parity generation and checking. The number of bus cycles used for a memory or I/O access Is also defined by the


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 - 1 5 Bub interface 5.1 Bus Control General Tbe processor provides on-chip a ll functions to control memory and peripheral devices, including RAS-CAS m ultiplexing, D RAM refresh and p arity generation and checking. The number of bus cycles used for a memory or I/O access Is also defined by the


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    -40pf) PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //PD42S16800, 42S17800 can execute CAS before RAS self refresh.


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    D42S16800 42S17800 MPD42S16800, 42S17800, //PD42S16800, 28-pin juPD42S PDF

    Untitled

    Abstract: No abstract text available
    Text: M O SEL VITELIC V53C511816500 1 M X 1 6 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, Orac 50 ns 60 ns 70 ns Max. Column Address Access Time, ^ aa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (Vc) 20 ns


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    V53C511816500 16-bit cycles/16 42-pin V53C511816500 PDF