RAM 8KX8 Search Results

M4Z32-BROOSH1

Abstract: M4Z28-BROOSH1 SOH28 m48t35 M4T28-BR12SH1 Zeropower M40SZ100 M40SZ100W M40Z111 M40Z300W
Contextual Info: Non-volatile RAM and RTC Selection guide High density surface mount solutions 32Mb NVRAM LPS LPS LPS LPS 16Mb with parallel RTC RAM RAM LPS RAM T212 RAM RAM LPS RAM 2x 8Mb LPSRAMs M48T212 M40Z300 “Hatless” 4x 8Mb LPSRAMs Mix and match ST SUPERVISORs, LPSRAMs and SNAPHAT tops for a surface mount

FM25V10 I2C programming example

Abstract: FM25L04 FM25xxx FM25V02 FM25V02 -G FM25H20 DFN8 FM25V05 FM25C160 FM25CL64
Contextual Info: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that

FM25L04

Abstract: FM25H20 AN304 AN-304 FM25040A FM25256B FM25C160 FM25CL64 FM25L16 FM25L256B
Contextual Info: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that

Contextual Info: STATIC SRAM RAM Random Access Memory 8Kx8 64K QA SOP LH5164AN

Contextual Info: Tekmos TK89C668 Microcontroller DS015 V1.3 January 30, 2013 Product Overview Features 64K Flash, 8K RAM, TWI General Description The TK89C668 is based on the 8051microcontroller architecture. With 64Kx8 of Flash memory and 8Kx8 of internal RAM, these parts are

FM3130-G

Abstract: FM3130-GTR FM3130 FM3130G 4558 bcd
Contextual Info: FM3130 Integrated RTC/Alarm and 64Kb F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory  Real-time Clock RTC with Alarm  Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM  Internally Organized as 8Kx8

FM3130-g

Abstract: fm3130 FM3130G FM3130-GTR 8030 8pin STATIC RAM 8464
Contextual Info: FM3130 Integrated RTC/Alarm and 64Kb F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory • Real-time Clock RTC with Alarm • Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM • Internally Organized as 8Kx8

FM3130

Contextual Info: FM3130 Integrated RTC/Alarm and 64Kb F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory  Real-time Clock RTC with Alarm  Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM  Internally Organized as 8Kx8

EDI8808CB

Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.

Contextual Info: JUNE 1990 IPILES SE Y SEMICONDUCTORS PRELIMINARY INFORMATION PNC10C68 CMOS/SNOS nvSRAM HIGH PERFORMANCE 8Kx8 NON-VOLATILE STATIC RAM Supersedes M ay 1990 edition The PNC10C68 is a fast static RAM (25, 30, 35 and 45 ns), with a non-volatile electrically-erasable PROM

Contextual Info: FM25640B 64-Kbit 8 K x 8 Serial (SPI) Automotive F-RAM 64-Kbit (8 K × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes

Contextual Info: FM25CL64B 64-Kbit 8 K x 8 Serial (SPI) Automotive F-RAM 64-Kbit (8 K × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes

Contextual Info: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell

hitachi eprom

Abstract: HMCS6800
Contextual Info: • APPLICATION 1. Static RAM tc o tt time for chip select to data retention : The 1.1. Static RAM Memory Cell The static RAM memory cell consists of flip-flops organized as 4 NMOS transistors and 2 load resistors as shown in figure 1-1. The data in the cell can be

26R2-5

Contextual Info: m EDI8808CA35/45/55ÏÏ0 o \ High Speed 64K Monolithic RAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power CMOS Static RAM organized as 8192 words by 8 bits each. In addition to 13 address inputs, and 8 common

Contextual Info: ^EDI EDI8808CA35/45/55/70 High Speed 64K Monolithic RAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power 64Kbit CMOS Static CMOS Static RAM organized as 8192 words by 8 bits Random Access Memory • Access Times 35,45,55, and 70ns

Contextual Info: MICROELECTRONICS ^ XL24410 Series fic*Jfene* in £ * 4-Bit Microcontroller KEY FEATURES OVERVIEW • Low voltage, single power source VDD “ 2.0 - 5.5V ■ Memory — XL24410:4096 X 8 bits ROM; 256 X 4 RAM — XL24810:8192 X 8 bits ROM; 256 X 4 RAM — RAM for LCD; 36 x 4 bits

Contextual Info: FM25640B 64-Kbit 8 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

Contextual Info: FM16W08 64-Kbit 8 K x 8 Wide Voltage Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

Contextual Info: FM25CL64B 64-Kbit 8 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic RAM 8Kx8 Static RAM CMOS, High Speed Monolithic The EDI8808CB is a 65,536bit, high speed CMOS Q iF M M 1]© i Features Static RAM organized as 8Kx8. All inputs and outputs are TTL compatible and allow

Contextual Info: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

Contextual Info: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic RAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)

100uF capacitor

Abstract: 12C68 DS1225Y STK12C68
Contextual Info: Using the STK12C68 Using the SIMTEK STK12C68 AutoStore 8K x 8 High Performance Nonvolatile Static RAM Simtek Corporation’s STK12C68 is a fast static RAM backed by a nonvolatile EEPROM shadow memory in an industry standard 28 pin package. The SRAM portion of memory operates similarly to other 8Kx8 fast