W28C256
Abstract: w28c .18 micrometer mos 200517-8
Text: W28C256 Radiation Hardened 32K x 8 CMOS EEPROM Northrop Grumman Corporation ECN 2005178 Rev. F May 2005 Features • 1.25 Micrometer Radiation Hardened CMOS on Epi − Total Dose up to 300 Krad Si − Transient Logic Upset >5E7 Rad(Si)/sec − Memory Data Loss >1E12 Rad(Si)/sec
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W28C256
w28c
.18 micrometer mos
200517-8
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Untitled
Abstract: No abstract text available
Text: 28LV010 3.3V 1 Megabit 128K x 8-Bit EEPROM 28LV010 FEATURES: DESCRIPTION: • 3.3V low voltage operation 128k x 8 Bit EEPROM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission
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28LV010
10-year
MIL-STD-883,
3000gâ
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79LV0832
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects
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79LV0832
32-Bit)
32-bit
79LV0832
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79LV0832
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects
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79LV0832
32-Bit)
32-bit
79LV0832
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DIN 1707
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects
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79LV0832
32-Bit)
32-bit
79LV0832
DIN 1707
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28c010T
Abstract: No abstract text available
Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM FEATURES: DESCRIPTION: • 128k x 8-bit EEPROM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single event effects @ 25°C
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28C010T
MIL-STD-883,
3000gâ
28c010T
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79LV0832
Abstract: 79LV radiation hardened cpu
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects
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79LV0832
32-Bit)
32-bit
79LV0832
79LV
radiation hardened cpu
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Untitled
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects
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32-Bit)
79LV0832
32-bit
79LV0832
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79C0832
Abstract: No abstract text available
Text: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM Logic Diagram DESCRIPTION: • Eight 128k x 8-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si), depending upon space mission • Excellent Single event effects
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79C0832
32-Bit)
79C0832
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79C0832
Abstract: ACT244
Text: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects - SELTH > 120 MeV/mg/cm2
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79C0832
32-Bit)
32-bit
79C0832
ACT244
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79C0832
Abstract: No abstract text available
Text: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM Logic Diagram DESCRIPTION: • Eight 128k x 8-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si), depending upon space mission • Excellent Single event effects
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79C0832
32-Bit)
79oduct
79C0832
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Untitled
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects @ 25°C
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79LV0832
32-Bit)
32-bit
79LV0832
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79LV2040
Abstract: 79LV2040B
Text: 79LV2040B 20 Megabit 512K x 40-Bit Low Low Voltage EEPROM MCM Logic Diagram DESCRIPTION: • 512k x 40-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects @ 25°C
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79LV2040B
40-Bit)
40-bit
79LV2040
79LV2040B
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Untitled
Abstract: No abstract text available
Text: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects - SEL > 120 MeV cm2/mg (Device)
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79C0832
32-Bit)
32-bit
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197A807
Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)
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197A807
2x105
1x1012
5962R96891
28-Lead
28C256
AT28C256.
AS9000,
197A807
BAE Systems prom 32K x 8
fuse smd code N
WY smd transistor
BAE Systems
b050 TRANSISTOR
PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2
smd atmel
AT28C256 rad
smd transistor a4
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d2803
Abstract: 32K x 8-Bit EEPROM
Text: 28C256T 256K EEPROM 32K x 8-Bit EEPROM DATA INPUTS/OUTPUT I/O0 - I/O7 VCC GND OE WE OE, CE, and WE LOGIC CE Y DECODER ADDRESS INPUTS DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX X DECODER IDENTIFICATION Logic Diagram DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation
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28C256T
28C256T
d2803
32K x 8-Bit EEPROM
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Untitled
Abstract: No abstract text available
Text: 28C256T 256K EEPROM 32K x 8-Bit EEPROM DATA INPUTS/OUTPUTS I/O0 - I/O7 VCC GND OE WE OE, CE, and WE LOGIC CE Y DECODER ADDRESS INPUTS DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX X DECODER IDENTIFICATION Logic Diagram DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation
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28C256T
28C256T
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AT28C256 rad
Abstract: 197a8 radiation hardened prom WY smd transistor
Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V Product Description Features Radiation Other • Fabricated with Bulk CMOS 0.8 µm Process • Read/Write Cycle Times ≤45 ns, (TC = -55°C to 125°C) • Total Dose Hardness through 2 × 105 rad(Si)
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5962R96891
197A807
28-Lead
28C256
AT28C256.
AS9000,
PUBS-01-B22-Q-011
MVA01-012
AT28C256 rad
197a8
radiation hardened prom
WY smd transistor
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation
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79C0408
A0-16
79C0408
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:
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79C0408
A0-16
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:
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79C0408
A0-16
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transistor comparison data sheet
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation
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79C0408
A0-16
transistor comparison data sheet
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation
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79C0408
A0-16
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE 79C0408 A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 FEATURES DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:
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79C0408
A0-16
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