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    RAA MARKING CODE Search Results

    RAA MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    74LVCH16501APF8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APV Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation

    RAA MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ELPIDA 512MB NOR FLASH

    Abstract: nand mcp elpida MCP NOR FLASH SDRAM elpida Diskonchip MS08-D9SD7-B3 marking G3 QUALCOMM Reference manual nec 4 Banks x 1m x 32Bit Synchronous DRAM emblaze qualcomm 1100
    Text: DiskOnChip-Based MCP Including DiskOnChip G3 and Mobile RAM Data Sheet, August 2004 • Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code


    Original     		97-DT-0304-00 ELPIDA 512MB NOR FLASH nand mcp elpida MCP NOR FLASH SDRAM elpida Diskonchip MS08-D9SD7-B3 marking G3 QUALCOMM Reference manual nec 4 Banks x 1m x 32Bit Synchronous DRAM emblaze qualcomm 1100 PDF

    MCP 256M nand toshiba

    Abstract: Diskonchip QUALCOMM Reference manual TRUEFFS TSOP 48 thermal resistance type1 MARKING G3 MCP 256M nand micron MICRON mcp transistor marking A9M MS06-D9SD8-B3
    Text: DiskOnChip -Based MCP Including DiskOnChip G3 and Mobile RAM Data Sheet, September 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code


    Original     		91-DT-0504-00 MCP 256M nand toshiba Diskonchip QUALCOMM Reference manual TRUEFFS TSOP 48 thermal resistance type1 MARKING G3 MCP 256M nand micron MICRON mcp transistor marking A9M MS06-D9SD8-B3 PDF

    PD48

    Abstract: uPD481850GF-A12-JBT
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 128 K words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write


    Original     		PD481850 PD481850 100-pin PD48 uPD481850GF-A12-JBT PDF

    MD4832-D512-V3Q18-X-P

    Abstract: MD4331-d1G-V3Q18-X-P marking Diskonchip MARKING G3 md4832-d512 ELPIDA K2 MD4811-D512-V3Q18-X MICRON mcp nand mcp elpida QUALCOMM Reference manual
    Text: DiskOnChip -Based MCP Including Mobile DiskOnChip G3 and Mobile RAM Data Sheet, February 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code


    Original     		97-DT-0803-00 MD4832-D512-V3Q18-X-P MD4331-d1G-V3Q18-X-P marking Diskonchip MARKING G3 md4832-d512 ELPIDA K2 MD4811-D512-V3Q18-X MICRON mcp nand mcp elpida QUALCOMM Reference manual PDF

    gck12

    Abstract: No abstract text available
    Text: WED9LAPC2C16V4BC White Electronic Designs 512K x 32 SSRAM / 512K x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES  DESCRIPTION The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous


    Original     		WED9LAPC2C16V4BC LUCTAPC640 WED9LAPC2C16V4BC WED9LAPC2C16V4BI gck12 PDF

    PD48

    Abstract: PD481850 lm 512
    Text: DATA SHEET DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function


    Original     		PD481850 PD481850 100-pin S100GF-65-JBT PD481850. PD481850GF-JBT: PD48 lm 512 PDF

    512k x 8 chip block diagram

    Abstract: WED9LAPC2B16P8BC WED9LAPC3C16V8BC
    Text: White Electronic Designs WED9LAPC3C16V8BC 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION The WED9LAPC3C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous


    Original     		WED9LAPC3C16V8BC LUCTAPC640 WED9LAPC3C16V8BC WED9LAPC2B16P8BC, 5M-1994. WED9LAPC3C16V8BI 512k x 8 chip block diagram WED9LAPC2B16P8BC PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.


    Original     		PD4811650 256K-WORD 32-BIT 100-pin PDF

    WED9LAPC2B16P8BC

    Abstract: WED9LAPC2C16V8BC
    Text: WED9LAPC2C16V8BC White Electronic Designs 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES  DESCRIPTION The WED9LAPC2C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous


    Original     		WED9LAPC2C16V8BC LUCTAPC640 WED9LAPC2C16V8BC WED9LAPC2B16P8BC, 5M-1994. WED9LAPC2C16V8BI WED9LAPC2B16P8BC PDF

    dba1

    Abstract: diode MARKING CODE A9 UPD481 diode MARKING A9
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.K 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.


    Original     		PD4811650 256K-WORD 32-BIT PD4811650 100-pin dba1 diode MARKING CODE A9 UPD481 diode MARKING A9 PDF

    UPD4811650GF-A10-9BT

    Abstract: 0z1 marking
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.K 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.


    Original     		PD4811650 256K-WORD 32-BIT PD4811650 100-pin UPD4811650GF-A10-9BT 0z1 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: WED48S8030E 2M x 8 Bits x 4 BANKS SYNCHRONOUS DRAM FEATURES DESCRIPTION „„ Single 3.3V power supply The WED48S8030E is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 8 bits. Synchronous design allows precise cycle control with the use of system clock, I/O


    Original     		WED48S8030E WED48S8030E 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of


    Original     		EDI416S4030A 1Mx16 EDI416S4030A 83MHz 100MHz) 83MHz) PDF

    EDI416S4030A

    Abstract: No abstract text available
    Text: White Electronic Designs EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION „ Single 3.3V power supply „ Fully Synchronous to positive Clock Edge „ Clock Frequency = 100, 83MHz „ SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) „ Burst Operation


    Original     		EDI416S4030A 1Mx16 EDI416S4030A 83MHz 100MHz) 83MHz) EDI416S4030A10SI EDI416S4030A12SI 1Mx16bitsx4banks PDF

    WED48S8030E

    Abstract: WED48S8030E10SI WED48S8030E8SI
    Text: WED48S8030E White Electronic Designs 2M x 8 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply  Fully Synchronous to positive Clock Edge  Clock Frequency = 125, 100MHz  SDRAM CAS# Latency = 2  Burst Operation The WED48S8030E is 67,108,864 bits of synchronous high


    Original     		WED48S8030E 100MHz WED48S8030E WED48S8030E8SI WED48S8030E10SI 125MHz WED48S8030E10SI WED48S8030E8SI PDF

    EDI416S4030A

    Abstract: 1Mx16bits
    Text: EDI416S4030A White Electronic Designs 1Mx16 Bits x 4 Banks Synchronous DRAM DESCRIPTION FEATURES  Single 3.3V power supply  Fully Synchronous to positive Clock Edge  Clock Frequency = 100, 83MHz  SDRAM CAS Latentency = 3 100MHz , 2 (83MHz)
    Original     		EDI416S4030A 1Mx16 83MHz 100MHz) 83MHz) EDI416S4030A EDI416S4030A10SI EDI416S4030A12SI 1Mx16bitsx4banks 1Mx16bits PDF

    EDI416S4030A

    Abstract: No abstract text available
    Text: EDI416S4030A White Electronic Designs 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION n n n n n The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with


    Original     		EDI416S4030A EDI416S4030A 83MHz 100MHz) 83MHz) EDI416S4030A10SI 1Mx16bitsx4banks 100MHz EDI416S4030A12SI PDF

    D7678

    Abstract: WED416S8030A 2MX16x4 WED416S8030A10s
    Text: WED416S8030A White Electronic Designs 2Mx16x4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise


    Original     		WED416S8030A 2Mx16x4 WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI D7678 WED416S8030A10s PDF

    SRA2210SF

    Abstract: KSR-2014-000
    Text: SRA2210SF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		SRA2210SF OT-23F KSR-2014-000 -10mA, SRA2210SF KSR-2014-000 PDF

    13001 TRANSISTOR equivalent

    Abstract: 13001 TRANSISTOR transistor 13001 CIRCUIT 2030 ic 5 pins 13001 b TRANSISTOR equivalent 13001 switching circuit transistor 13001 IC 2030 PIN CONNECTIONS SRA2210S KSR-2030-000
    Text: SRA2210S Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		SRA2210S OT-23 KSR-2030-000 -10mA, 13001 TRANSISTOR equivalent 13001 TRANSISTOR transistor 13001 CIRCUIT 2030 ic 5 pins 13001 b TRANSISTOR equivalent 13001 switching circuit transistor 13001 IC 2030 PIN CONNECTIONS SRA2210S KSR-2030-000 PDF

    wf vqe 14 e

    Abstract: Wf vqe 14 WF vqe 14 c wf vqe 13 d wf vqe 21 CQY8 wf vqe 14 d
    Text: CQY80 N G Vishay Telefunken T Optocoupler with Phototransistor Output Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


    OCR Scan     		CQY80 CQY80N CNY80NG 11-Jan-99 CNY80N wf vqe 14 e Wf vqe 14 WF vqe 14 c wf vqe 13 d wf vqe 21 CQY8 wf vqe 14 d PDF

    DT1122G

    Abstract: dt1122 TCDT1120 DT1122G1
    Text: TCDT1120 G Series Vishay Telefunken T Optocoupler with Phototransistor Output Description The TCDT1120(G) series consists of a phototransis­ tor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


    OCR Scan     		TCDT1120 11-Ja TCDT112 TCDT112. DT1122G dt1122 DT1122G1 PDF

    et1600

    Abstract: No abstract text available
    Text: TCET1600 up to TCET4600 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arse­ nide i nf rared-emitti ng diodes i n a 4-lead up to 16-lead plastic dual inline package.


    OCR Scan     		TCET1600 TCET4600 TCET1600/ TCET2600/ TCET4600 16-lead 11-Ja TCET2600 et1600 PDF

    c81-004

    Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
    Text: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class


    OCR Scan     		ERC81-004 e18-ts 95t/R89 Shl50 c81-004 c81 004 Diode C81 004 C81004 ERC81 T151 T460 T810 T930 PDF