RA30H4047M1
Abstract: RA30H4047 RA30H4552M1 RA30
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-083-C Date : 17th Jul. 2007 Rev.date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1
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AN-UHF-083-C
RA30H4552M1
RA30H4047M1
RA30H4047M1
RA30H4047M1.
400-470MHz,
100pF,
RA30H4047
RA30
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the
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RA30H4047M1
400-470MHz
RA30H4047M1
30-watt
470-MHz
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400M
Abstract: 430M 470M RA30H4047M1
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M1
400-470MHz
RA30H4047M1
30-watt
470-MHz
400M
430M
470M
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400M
Abstract: 430M 470M RA30H4047M1 RA30H4047
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M1
400-470MHz
RA30H4047M1
30-watt
470-MHz
400M
430M
470M
RA30H4047
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RA30H4047M1
Abstract: RA30H4552M1 RA30H4047M
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-083-D Date : 17th Jul. 2007 Rev. Date : 22th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1
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AN-UHF-083-D
RA30H4552M1
RA30H4047M1
RA30H4047M1
RA30H4047M1.
400-470MHz,
100pF,
RA30H4047M
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RA30H4047M1
Abstract: mitsubishi rf MITSUBISHI RF POWER MOS FET RA30H4552M1
Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-083B Date : 17th Jul. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1
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AN-UHF-083B
RA30H4552M1
RA30H4047M1
RA30H4047M1
RA30H4047M1.
400-470MHz,
100pF,
mitsubishi rf
MITSUBISHI RF POWER MOS FET
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the
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RA30H4047M1
400-470MHz
RA30H4047M1
30-watt
470-MHz
Oct2011
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st 074c
Abstract: RA30H4047M1 transistor a 1941 RA30H4047 rf power amplifier circuit by 400-470mhz
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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400-470MHz
RA30H4047M1
30-watt
470-MHz
RA30H4047M1
st 074c
transistor a 1941
RA30H4047
rf power amplifier circuit by 400-470mhz
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430M
Abstract: 470M RA30H4047M1 400M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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PDF
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RA30H4047M1
400-470MHz
RA30H4047M1
30-watt
470-MHz
430M
470M
400M
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RA30H4047M
Abstract: RA30H4047M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M
400-470MHz
RA30H4047M
30-watt
470-MHz
RA30H4047M-101
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RA30H4047M
Abstract: RA30H gp 532 RA30H4047M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M
400-470MHz
RA30H4047M
30-watt
470-MHz
RA30H
gp 532
RA30H4047M-101
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RF MOSFET MODULE
Abstract: RA30H4047 RA30H4047M RA30H4047M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M
400-470MHz
RA30H4047M
30-watt
470-MHz
RF MOSFET MODULE
RA30H4047
RA30H4047M-101
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.
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Original
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PDF
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RA30H4047M
400-470MHz
RA30H4047M
30-watt
470-MHz
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.
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RA30H4047M
400-470MHz
RA30H4047M
30-watt
470-MHz
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