Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to 520-MHz range.
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RA30H4552M1
450-520MHz
RA30H4552M1
30-watt
520-MHz
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LT 7210
Abstract: 470M RA30H4552M1 RA30H4552M1-101 074c RF POWER amplifier 10 watt
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to
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RA30H4552M1
450-520MHz
RA30H4552M1
30-watt
520-MHz
LT 7210
470M
RA30H4552M1-101
074c
RF POWER amplifier 10 watt
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RA30H4047M1
Abstract: RA30H4047 RA30H4552M1 RA30
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-083-C Date : 17th Jul. 2007 Rev.date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1
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AN-UHF-083-C
RA30H4552M1
RA30H4047M1
RA30H4047M1
RA30H4047M1.
400-470MHz,
100pF,
RA30H4047
RA30
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470M
Abstract: RA30H4552M1 RA30H4552M1-101 "RF MOSFET" 300W
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to
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Original
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PDF
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RA30H4552M1
450-520MHz
RA30H4552M1
30-watt
520-MHz
470M
RA30H4552M1-101
"RF MOSFET" 300W
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RA30H4552M1
Abstract: RA30H4552M1-101 st 074c
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to
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Original
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PDF
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450-520MHz
RA30H4552M1
30-watt
520-MHz
RA30H4552M1
RA30H4552M1-101
st 074c
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lt 7210
Abstract: 470M RA30H4552M1 RA30H4552M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to
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Original
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PDF
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RA30H4552M1
450-520MHz
RA30H4552M1
30-watt
520-MHz
lt 7210
470M
RA30H4552M1-101
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RA30H4047M1
Abstract: RA30H4552M1 RA30H4047M
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-083-D Date : 17th Jul. 2007 Rev. Date : 22th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1
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AN-UHF-083-D
RA30H4552M1
RA30H4047M1
RA30H4047M1
RA30H4047M1.
400-470MHz,
100pF,
RA30H4047M
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Amp. mosfet 500 watt
Abstract: 074C op amp
Text: < Silicon RF Power Modules > RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to 520-MHz range.
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Original
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PDF
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RA30H4552M1
450-520MHz
RA30H4552M1
30-watt
520-MHz
Oct2011
Amp. mosfet 500 watt
074C op amp
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RA30H4047M1
Abstract: mitsubishi rf MITSUBISHI RF POWER MOS FET RA30H4552M1
Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-083B Date : 17th Jul. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1
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AN-UHF-083B
RA30H4552M1
RA30H4047M1
RA30H4047M1
RA30H4047M1.
400-470MHz,
100pF,
mitsubishi rf
MITSUBISHI RF POWER MOS FET
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