RA30H4047M1 Search Results

RA30H4047M1

Abstract: RA30H4047 RA30H4552M1 RA30
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-083-C Date : 17th Jul. 2007 Rev.date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1

Contextual Info: < Silicon RF Power Modules > RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the

400M

Abstract: 430M 470M RA30H4047M1
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

400M

Abstract: 430M 470M RA30H4047M1 RA30H4047
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

RA30H4047M1

Abstract: RA30H4552M1 RA30H4047M
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-083-D Date : 17th Jul. 2007 Rev. Date : 22th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1

RA30H4047M1

Abstract: mitsubishi rf MITSUBISHI RF POWER MOS FET RA30H4552M1
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-083B Date : 17th Jul. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1

Contextual Info: < Silicon RF Power Modules > RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the

st 074c

Abstract: RA30H4047M1 transistor a 1941 RA30H4047 rf power amplifier circuit by 400-470mhz
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

430M

Abstract: 470M RA30H4047M1 400M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

RA30H4047M

Abstract: RA30H4047M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

RA30H4047M

Abstract: RA30H gp 532 RA30H4047M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

RF MOSFET MODULE

Abstract: RA30H4047 RA30H4047M RA30H4047M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

Contextual Info: <Silicon RF Power Modules > RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.

Contextual Info: <Silicon RF Power Modules > RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.