R6012 Search Results

Contextual Info: 10V Drive Nch MOSFET R6012ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 9.0 7.25 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

R6012AN

Contextual Info: R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

R6012ANX

Contextual Info: R6012ANX Transistors 10V Drive Nch MOSFET R6012ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

r6012anx

Contextual Info: R6012ANX R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R6012FNX 10V Drive Nch MOSFET - R6012FNX Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Contextual Info: 10V Drive Nch MOSFET R6012ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 9.0 7.25 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R6012FNX Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage

Contextual Info: 10V Drive Nch MOSFET R6012ANJ zStructure Silicon N-channel MOSFET zDimensions Unit : mm LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 9.0 7.25 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R6012FNJ Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.51W ID 12A PD 50W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage

R6012ANX

Contextual Info: R6012ANX Nch 600V 12A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R6012FNX Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.51W ID 12A PD 50W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

V3V REV-1.1

Abstract: asus C5027 r d5703 X7RA 47N217 C5706 c6005 3VA2 ICS954310BG
Contextual Info: A B C D E A8J/F SCHEMATIC R11 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 YONAH CPU 1 YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN. Calistoga-CPU

QG82945PM

Abstract: asus R7790 47n217 isl6227caz ISL6262CRZ rtl8111b d5702 C5022 R5538
Contextual Info: A B C D E A8Jp/Jv/Je/Jn/Fm SCHEMATIC 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Merom CPU 1 Merom CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN.

asus

Abstract: 47n217 R7790 C5706 c5701 R5314 ISL6262CRZ ICS954310BGLFT rtl8111b powerload
Contextual Info: A B C D E A8J/F SCHEMATIC 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 YONAH CPU 1 YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN. Calistoga-CPU

ISL6259

Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01

npce781la0dx

Abstract: NPCE781 npce781la TI_BQ24721C_QFN_32P NPCE78 BAT54C3 RTL8103 realtek ALC 3232 SLG8SP510T C4161
Contextual Info: Perugia 10M MP Build A03 2009.05.05 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Perugia10M SIZE CODE A3 CS SHEET DOC. NUMBER REV 1310A2250501 1 OF x01 63

UL E42024

Abstract: BCT 780 YET3001 CB150-S8 CB100-8 CB100-10 LN300T920-21 ya4a YPT-60-21 D 4242
Contextual Info: 裸圧着端子 •低圧開閉器用圧着端子CBタイプSシリーズ（形状B） B φD φd1 φd2 E F T L E42024 LR20812 形 番 寸 法（㎜） φd2 CB22-S5 CB22-S6 CB22-S8 CB38-S5 CB38-S6 5.3 6.4 8.4 5.3 6.4 CB60-S6 6.4 適用電線範囲 B L

180-L12

Abstract: AD-901S 100l10
Contextual Info: 裸圧着端子 •丸形端子（R形） 丸 形 端 子 ︵ R 形 ︶ T F E L φd2 B φd1 φD 12.4 12.4 15.0 15.0 15.0 11.5 11.5 13.2 14.4 15.8 11.5 14.4 16.8 15.8 14.4 15.8 15.8 21.7 21.7 21.7 25.5 31.0 12.3 12.3 13.2 12.3 14.4 16.8 12.3 14.4 16.8 16.0

R200-12

Abstract: R100-16 R150-14 jst 5,5 8-NK5
Contextual Info: Solderless terminals RING TONGUE R type Non-insulated ød2 ød1 B F øD Brazed seam E T L File No.: E42024 Stud size Applicable Wire AWG#(mm2) American Metric 2 1-2 3 3-4 26 to 22 3.5 5-6 (0.2 to 0.5) 4 8 5 10 2 1-2 3 3-4 3.5 5-6 3 3-4 3 3-4 3.5 5-6 3 3-4

d5023

Abstract: C5027 R d3000 mosfet C5027 r transistor mosfet c5027 equivalent transistor D5023 C6017 Transformer ei33 equivalent of transistor c5027 NEC2501
Contextual Info: Design of an ACIM Vector Control Drive using the 56F8013 Device Designer Reference Manual 56800E 16-bit Digital Signal Controllers DRM075 Rev 1 11/2005 freescale.com Design of an ACIM Vector Control Drive using the 56F8013 Device Designer Reference Manual