R1QAA4436RBG Search Results

RENESAS MARKING CQ

Contextual Info: Datasheet R1QAA4436RBG,R1QAA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency R10DS0137EJ0100 Rev.1.00 Oct 10, 2012 Description The R1QAA4436RBG is a 4,194,304-word by 36-bit and the R1QAA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: Datasheet R1QAA4436RBG,R1QAA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency R10DS0137EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QAA4436RBG is a 4,194,304-word by 36-bit and the R1QAA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Datasheet R1QLA4436RBG, R1QLA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0144EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: Datasheet R1QEA4436RBG, R1QEA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0142EJ0100 Rev.1.00 Oct 21, 2013 Description The R1QEA4436RBG is a 4,194,304-word by 36-bit and the R1QEA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: Datasheet R1QHA4436RBG,R1QHA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency R10DS0145EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QHA4436RBG is a 4,194,304-word by 36-bit and the R1QHA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: R1QJA72 / R1QMA72 Series R1QJA7236ABB / R1QJA7218ABB R1QMA7236ABB / R1QMA7218ABB 72-Mbit DDRII+ SRAM 4-word Burst R10DS0174EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous

Contextual Info: R1QHA72 / R1QLA72 Series R1QHA7236ABG / R1QHA7218ABG R1QLA7236ABG / R1QLA7218ABG 72-Mbit DDRII+ SRAM 2-word Burst R10DS0184EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous

Contextual Info: R1QAA72 / R1QDA72 Series R1QAA7236ABB / R1QAA7218ABB R1QDA7236ABB / R1QDA7218ABB 72-Mbit QDR II+ SRAM 4-word Burst R10DS0169EJ0011 Rev. 0.11 2013.01.15 Description

date code marking samsung

Contextual Info: R1QAA72 / R1QDA72 Series R1QAA7236ABG / R1QAA7218ABG R1QDA7236ABG / R1QDA7218ABG 72-Mbit QDR II+ SRAM 4-word Burst R10DS0180EJ0011 Rev. 0.11 2013.01.15 Description

Contextual Info: R1Q4A4436RBG / R1Q4A4418RBG Series Preliminary R1Q4A4436RBG Series R1Q4A4418RBG Series R1Q4A4409RBG Series R10DS0188EJ0011 144-Mbit DDRII SRAM 2-word Burst Preliminary Rev. 0.11b 2012.06.05 Description The R1Q4A4436 is a 4,194,304-word by 36-bit and the R1Q4A4418 is a 8,388,608-word by 18-bit synchronous

Contextual Info: R1Q6A7236ABB / R1Q6A7218ABB Series R1Q6A7236ABB R1Q6A7218ABB 72-Mbit DDRII SRAM Separate I/O 2-word Burst R10DS0168EJ0011 Rev. 0.11 2013.01.15 Description The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous

Contextual Info: 72DM4 R1Q5A7236ABB / R1Q5A7218ABB Series R1Q5A7236ABB R1Q5A7218ABB 72-Mbit DDRII SRAM 4-word Burst R10DS0167EJ0011 Rev. 0.11 2013.01.15 Description The R1Q5A7236 is a 2,097,152-word by 36-bit and the R1Q5A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Datasheet R1QKA4436RBG,R1QKA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0138EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QKA4436RBG is a 4,194,304-word by 36-bit and the R1QKA4418RBG is a 8,388,608-word by 18-bit

R1QDA4436RBG

Contextual Info: Datasheet R1QDA4436RBG,R1QDA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0136EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QDA4436RBG is a 4,194,304-word by 36-bit and the R1QDA4418RBG is a 8,388,608-word by 18-bit

KA7218

Contextual Info: R1Q2A7236ABG / R1Q2A7218ABG / R1Q2A7209ABG Series R1Q2A7236ABG R1Q2A7218ABG R1Q2A7209ABG 72-Mbit QDR II SRAM 2-word Burst R10DS0175EJ0011 Rev. 0.11 2013.01.15 Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the

Contextual Info: R1GAA72 / R1QKA72 Series R1QGA7236ABB / R1QGA7218ABB R1QKA7236ABB / R1QKA7218ABB 72-Mbit QDR II+ SRAM 4-word Burst R10DS0172EJ0011 Rev. 0.11 2013.01.15 Description

LA7218

Contextual Info: R1QBA72 / R1QEA72 Series R1QBA7236ABG / R1QBA7218ABG R1QEA7236ABG / R1QEA7218ABG 72-Mbit DDRII+ SRAM 2-word Burst R10DS0181EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous

A4418

Contextual Info: R1QHA44*RBG / R1QLA44*RBG Series Preliminary R1QBA4436RBG / R1QBA4418RBG / R1QBA4409RBG R1QEA4436RBG / R1QEA4418RBG / R1QEA4409RBG R1QHA4436RBG / R1QHA4418RBG / R1QHA4409RBG R1QLA4436RBG / R1QLA4418RBG / R1QLA4409RBG R10DS0190EJ0011 Preliminary Rev. 0.11b

marking code 1p

Contextual Info: 72QM2 R1Q3A7236ABG / R1Q3A7218ABG Series R1Q3A7236ABG R1Q3A7218ABG 72-Mbit QDR II SRAM 4-word Burst R10DS0176EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory

date code marking samsung

Contextual Info: R1QBA72 / R1QEA72 Series R1QBA7236ABB / R1QBA7218ABB R1QEA7236ABB / R1QEA7218ABB 72-Mbit DDRII+ SRAM 2-word Burst R10DS0170EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous

Contextual Info: 72DM4 R1Q5A7236ABG / R1Q5A7218ABG Series R1Q5A7236ABG R1Q5A7218ABG 72-Mbit DDRII SRAM 4-word Burst R10DS0178EJ0011 Rev. 0.11 2013.01.15 Description The R1Q5A7236 is a 2,097,152-word by 36-bit and the R1Q5A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: R1Q6A7236ABG / R1Q6A7218ABG Series R1Q6A7236ABG R1Q6A7218ABG 72-Mbit DDRII SRAM Separate I/O 2-word Burst R10DS0179EJ0011 Rev. 0.11 2013.01.15 Description The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous

R1QDA4418RBG-19IB0

Abstract: RENESAS MARKING CQ RENESAS Marking is "cq" RENESAS MARKING AB
Contextual Info: Datasheet R1QDA4436RBG,R1QDA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0136EJ0100 Rev.1.00 Oct 10, 2012 Description The R1QDA4436RBG is a 4,194,304-word by 36-bit and the R1QDA4418RBG is a 8,388,608-word by 18-bit