R1LV0408DSA Search Results
R1LV0408DSA Price and Stock
Rochester Electronics LLC R1LV0408DSA-7LR-B0IC SRAM 4MBIT PARALLEL 32TSOP I |
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R1LV0408DSA-7LR-B0 | Bulk | 14,875 | 23 |
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Rochester Electronics LLC R1LV0408DSA-5SR-B0IC SRAM 4MBIT PARALLEL 32TSOP I |
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R1LV0408DSA-5SR-B0 | Bulk | 1,295 | 23 |
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Renesas Electronics Corporation R1LV0408DSA-7LR#B0SRAM Chip Async Single 3V 4M-bit 512K x 8 70ns 32-Pin TSOP-I Tray |
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R1LV0408DSA-7LR#B0 | 14,875 | 25 |
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R1LV0408DSA-7LR#B0 | 14,875 | 1 |
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Renesas Electronics Corporation R1LV0408DSA-5SR#B0SRAM Chip Async Single 3V 4M-bit 512K x 8 55ns 32-Pin TSOP-I Tray |
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R1LV0408DSA-5SR#B0 | 175 | 25 |
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R1LV0408DSA-5SR#B0 | 1,295 | 1 |
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Renesas Electronics Corporation R1LV0408DSA-5SI#B0Sram, 4Mbit, 3V, 55Ns, 32Stsop; Memory Size:4Mbit; Sram Memory Configuration:512K X 8Bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:Stsop; No. Of Pins:32Pins; Access Time:55Ns; Operating Temperature Rohs Compliant: Yes |Renesas R1LV0408DSA-5SI#B0 |
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R1LV0408DSA-5SI#B0 | Bulk | 1 |
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R1LV0408DSA-5SI#B0 | 8 |
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R1LV0408DSA-5SI#B0 | 6 |
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R1LV0408DSA-5SI#B0 | 234 |
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R1LV0408DSA Datasheets (12)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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R1LV0408DSA-5SI |
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Low Power SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: sTSOP (32) | Original | |||
R1LV0408DSA-5SI#B0 |
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Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32STSOP | Original | |||
R1LV0408DSA-5SI#S0 |
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Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32TSOP | Original | |||
R1LV0408DSA-5SR |
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Low Power SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: sTSOP (32) | Original | |||
R1LV0408DSA-5SR#B0 |
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Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32STSOP | Original | |||
R1LV0408DSA-5SR#S0 |
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Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32TSOP | Original | |||
R1LV0408DSA-7LI |
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Low Power SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: sTSOP (32) | Original | |||
R1LV0408DSA-7LI#B0 |
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Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32STSOP | Original | |||
R1LV0408DSA-7LI#S0 |
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Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32TSOP | Original | |||
R1LV0408DSA-7LR |
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Low Power SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: sTSOP (32) | Original | |||
R1LV0408DSA-7LR#B0 |
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Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32STSOP | Original | |||
R1LV0408DSA-7LR#S0 |
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Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32TSOP | Original |
R1LV0408DSA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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R1LV0408D
Abstract: R1LV0408DSB-7L R1LV0408DSA
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R1LV0408D 512-kword REJ03C0310-0100 32-pin 32pin R1LV0408DSB-7L R1LV0408DSA | |
HM2V8100TTI5SE
Abstract: HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI
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TSOP32 sTSOP32 M5M5256DVP-55LL M5M5256DVP-55XL M5M5256DVP-70LL M5M5256DVP-70XL M5M5256DVP-70LLI M5M5V108DFP-70H HM2V8100TTI5SE HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI | |
Contextual Info: R1LV0408D Series 4M SRAM 512-kword x 8-bit REJ03C0310-0100 Rev.1.00 May.24.2007 Description The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s highperformance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density, |
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R1LV0408D 512-kword REJ03C0310-0100 32-pin 32pin | |
CY62148E
Abstract: R1LP0108ESA-7SR
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R1WV6416RSD-5SI R1WV6416RSD-7SI HM6216514LTTI-5SL R10PF0003ED0700 CY62148E R1LP0108ESA-7SR | |
HN58V1001TI-25E
Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
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REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI | |
M5M5256DFP-70LL*bm
Abstract: HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI
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M5M5256DFP-70G M5M5256DVP-70G M5M5256DVP-70XG M5M5256DVP-70GI M5M5256DFP-55LL M5M5256DFP-55XL M5M5256DFP-70LL M5M5256DFP-70XL M5M5256DFP-70LLI M5M5256DVP-55LL M5M5256DFP-70LL*bm HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI | |
Contextual Info: R1LV0408D Series 4M SRAM 512-kword x 8-bit REJ03C0310-0100 Rev.1.00 May.24.2007 Description The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s highperformance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density, |
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R1LV0408D 512-kword REJ03C0310-0100 32-pin 32pin | |
R1LV0408DContextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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r1lv0108
Abstract: R1LP0108 HM216514 R1LV1616 HM216514TTI5SE R1LP0408CSP-5SC R1LP0108ESP R1LP0108ESr r1lv0414dsb-5si R1LP0108ESR-7SR
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R10PF0003ED0100 r1lv0108 R1LP0108 HM216514 R1LV1616 HM216514TTI5SE R1LP0408CSP-5SC R1LP0108ESP R1LP0108ESr r1lv0414dsb-5si R1LP0108ESR-7SR |