R09DS0051EJ0400 Search Results
R09DS0051EJ0400 Datasheets Context Search
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Contextual Info: Preliminary Data Sheet NESG210719 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 3-Pin Ultra Super Minimold 19, 1608 PKG <R> R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification |
Original |
NESG210719 R09DS0051EJ0400 NESG210719 NESG210719-A NESG210719-T1 NESG210719-T1-A | |
maximum gain s2pContextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary NESG210719 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 3-Pin Ultra Super Minimold 19, 1608 PKG <R> R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification |
Original |
NESG210719 R09DS0051EJ0400 NESG210719 NESG210719-T1 NESG210719-A NESG210719-T1-A maximum gain s2p |