NE3513
Abstract: MARKING V84 NE3513M04
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE3513M04 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 FEATURES • Low noise figure and high associated gain: NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz
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Original
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PDF
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NE3513M04
R09DS0028EJ0100
NE3513M04-T2
NE3513M04-T2-A
NE3513M04
NE3513
MARKING V84
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NE3513
Abstract: NE3513M04 MARKING V84
Text: Data Sheet NE3513M04 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 FEATURES • Low noise figure and high associated gain: NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz NF = 0.5 dB TYP., Ga = 12 dB TYP. @VDS = 2 V, ID = 6 mA, f = 12 GHz Reference Value
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Original
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PDF
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NE3513M04
R09DS0028EJ0100
NE3513M04-T2
NE3513M04-T2-A
NE3513
NE3513M04
MARKING V84
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