R07DS0779EJ0110 Search Results

Contextual Info: Preliminary Datasheet RJK03L2DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0779EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: Preliminary Datasheet RJK03L2DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0779EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting