R07DS0771EJ0110 Search Results

Contextual Info: Preliminary Datasheet RJK03M6DNS Silicon N Channel Power MOS FET Power Switching R07DS0771EJ0110 Rev.1.10 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.6 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK03M6DNS Silicon N Channel Power MOS FET Power Switching R07DS0771EJ0110 Rev.1.10 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.6 m typ. (at VGS = 10 V)