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    RJK1001DPN-E0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK1001DPN-E0 R07DS0619EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 100 V, 80 A, 5.5 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.4 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		RJK1001DPN-E0 O-220AB R07DS0619EJ0200 PRSS0004AG-A O-220AB) RJK1001DPN-E0 PDF