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    Abstract: RQA0009 RQA0009SXTL-E R07DS0493EJ0200
    Text: Preliminary Datasheet RQA0009SXAQS R07DS0493EJ0200 Previous: REJ03G1566-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)


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    PDF RQA0009SXAQS R07DS0493EJ0200 REJ03G1566-0100) PLZZ0004CA-A 17-33 0952 RQA0009 RQA0009SXTL-E R07DS0493EJ0200