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R07DS0424EJ0100 Datasheets Context Search
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Contextual Info: Preliminary Datasheet RJK6024DPE Silicon N Channel MOS FET High Speed Power Switching R07DS0424EJ0100 Rev.1.00 Jun 06, 2011 Features • Low on-resistance RDS on = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching |
Original |
RJK6024DPE R07DS0424EJ0100 PRSS0004AE-B |