R07DS0166EJ0300 Search Results
R07DS0166EJ0300 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
rjp60dContextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) |
Original |
RJP60D0DPK R07DS0166EJ0300 PRSS0004ZE-A rjp60d | |
rjp60dContextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) |
Original |
RJP60D0DPK R07DS0166EJ0300 PRSS0004ZE-A rjp60d |