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    RJK0652DPB

    Contextual Info: Preliminary Datasheet RJK0652DPB R07DS0077EJ0102 Previous: REJ03G1766-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		RJK0652DPB R07DS0077EJ0102 REJ03G1766-0101) PTZZ0005DA-A cur9044 RJK0652DPB PDF

    RJK0652

    Abstract: RJK0652DPB RJK06 R07DS0077EJ0102 rjk0652dpb-00-j5 RJK065
    Contextual Info: Preliminary Datasheet RJK0652DPB R07DS0077EJ0102 Previous: REJ03G1766-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		RJK0652DPB R07DS0077EJ0102 REJ03G1766-0101) PTZZ0005DA-A Ava9044 RJK0652 RJK0652DPB RJK06 R07DS0077EJ0102 rjk0652dpb-00-j5 RJK065 PDF