RJK06 Search Results

RJK06 Result Highlights (5)

Part	Manufacturer	Description
RJK0601DPN-E0#T2	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 110A 3.1Mohm To-220Ab
RJK0653DPB-00#J5	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 45A 4.8Mohm Lfpak
RJK0652DPB-00#J5	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 35A 7Mohm Lfpak
RJK0602DPN-E0#T2	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 100A 3.9Mohm To-220Ab
RJK0655DPB-00#J5	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 35A 6.7Mohm Lfpak

RJK06 Price and Stock

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Renesas Electronics Corporation RJK0651DPB-00-J5 MOSFET N-CH 60V 25A LFPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK0651DPB-00-J5	Reel	20,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.7425	Buy Now
Avnet Americas	RJK0651DPB-00-J5	Reel		18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	RJK0651DPB-00-J5			18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation RJK0658DPA-00-J5A MOSFET N-CH 60V 25A 8WPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK0658DPA-00-J5A	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.93	Buy Now
	RJK0658DPA-00-J5A	Cut Tape			1	1 $2.5 10 $2.5 100 $2.5 1000 $2.5 10000 $2.5	Buy Now
	RJK0658DPA-00-J5A	Digi-Reel			1	1 $2.5 10 $2.5 100 $2.5 1000 $2.5 10000 $2.5	Buy Now
Renesas Electronics Corporation RJK0660DPA-00-J5A MOSFET N-CH 60V 40A 8WPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK0660DPA-00-J5A	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.5	Buy Now
Renesas Electronics Corporation RJK0659DPA-00-J5A MOSFET N-CH 60V 30A 8WPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK0659DPA-00-J5A	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.095	Buy Now
Renesas Electronics Corporation RJK0654DPB-00-J5 MOSFET N-CH 60V 30A LFPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK0654DPB-00-J5	Cut Tape	4,288		1	1 $2.8 10 $1.921 100 $2.8 1000 $1.08 10000 $1.08	Buy Now
	RJK0654DPB-00-J5	Digi-Reel	4,288		1	1 $2.8 10 $1.921 100 $2.8 1000 $1.08 10000 $1.08	Buy Now
Avnet Americas	RJK0654DPB-00-J5	Reel		18 Weeks	2,500	1 $1.152 10 $1.152 100 $1.152 1000 $1.152 10000 $1.152	Buy Now

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RJK06 Datasheets (18)

Part	Manufacturer	Description	Datasheet Type	PDF
RJK0601DPN-E0#T2	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 110A TO220	Original	PDF
RJK0602DPN-E0#T2	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 100A TO220	Original	PDF
RJK0603DPN-A0#T2	Renesas Electronics America	MOSFET N-CH 60V 80A TO220ABA	Original	PDF
RJK0603DPN-E0#T2	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 80A TO220	Original	PDF
RJK0629DPE-00#J3	Renesas Electronics America	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 85A LDPAK	Original	PDF
RJK0651DPB-00#J5	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 25A LFPAK	Original	PDF
RJK0652DPB-00#J5	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 35A LFPAK	Original	PDF
RJK0653DPB-00#J5	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 45A LFPAK	Original	PDF
RJK0654DPB-00#J5	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V LFPAK	Original	PDF
RJK0654DPB-WS#J5	Renesas Electronics America	IGBT	Original	PDF
RJK0655DPB-00#J5	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 35A LFPAK	Original	PDF
RJK0655DPB-WS#J5	Renesas Electronics America	IGBT	Original	PDF
RJK0656DPB-00#J5	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 40A LFPAK	Original	PDF
RJK0656DPB-WS#J5	Renesas Electronics America	IGBT	Original	PDF

RJK0657DPA-00#J5A	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 20A WPAK	Original	PDF
RJK0658DPA-00#J5A	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 25A WPAK	Original	PDF
RJK0659DPA-00#J5A	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A WPAK	Original	PDF
RJK0660DPA-00#J5A	Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 40A WPAK	Original	PDF

RJK06 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJK0652DPB Abstract: No abstract text available Text: Preliminary Datasheet RJK0652DPB 60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Features •     Low on-resistance RDS on = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free	Original	PDF	RJK0652DPB R07DS0077EJ0200 PTZZ0005DA-A RJK0652DPB
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0630JPE Silicon N Channel MOS FET High Speed Power Switching R07DS0340EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 6.2 mΩ typ. Capable of 4.5 V gate drive	Original	PDF	RJK0630JPE R07DS0340EJ0100 AEC-Q101 PRSS0004AE-B
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0200 Rev.2.00 May 23, 2013 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive	Original	PDF	RJK0631JPE R07DS0341EJ0200 AEC-Q101 PRSS0004AE-B
Untitled Abstract: No abstract text available Text: Preliminary RJK0629DPN N Channel Power MOS FET High-Speed Switching Use REJ03G1873-0100 Rev.1.00 Dec 15, 2009 Features • VDSS: 60 V • RDS on : 4.5 mΩ (Max) • ID: 85 A Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 4 2, 4 D 1. Gate	Original	PDF	RJK0629DPN REJ03G1873-0100 PRSS0004AC-A O-220AB)
RJK0656DPB Abstract: No abstract text available Text: Preliminary RJK0656DPB Silicon N Channel Power MOS FET Power Switching REJ03G1882-0100 Rev.1.00 Nov 18, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 4.5 mΩ typ. (at VGS = 10 V)	Original	PDF	RJK0656DPB REJ03G1882-0100 PTZZ0005DA-A RJK0656DPB
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline	Original	PDF	RJK0602DPN-E0 O-220AB R07DS0653EJ0200 PRSS0004AG-A O-220AB)
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline	Original	PDF	RJK0603DPN-E0 O-220AB R07DS0654EJ0100 PRSS0004AC-A O-220AB)
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline	Original	PDF	RJK0603DPN-E0 O-220AB R07DS0654EJ0200 PRSS0004AG-A O-220AB)
RJK0654DPB Abstract: No abstract text available Text: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)	Original	PDF	RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0300 Rev.3.00 Jul 24, 2013 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive	Original	PDF	RJK0631JPR R07DS0879EJ0300 AEC-Q101 PRSS0003AD-A O-220FM)
RJK0654DPB Abstract: No abstract text available Text: Preliminary Datasheet RJK0654DPB 60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching R07DS1052EJ0200 Previous: REJ03G1880-0100 Rev.2.00 Apr 09, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V)	Original	PDF	RJK0654DPB R07DS1052EJ0200 REJ03G1880-0100) PTZZ0005DA-A RJK0654DPB
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0660DPA 60V, 40A, 5.1mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0346EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance	Original	PDF	RJK0660DPA R07DS0346EJ0300 PWSN0008DE-A
RJK0659DPA Abstract: No abstract text available Text: Preliminary Datasheet RJK0659DPA 60V, 30A, 8.0mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0345EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance	Original	PDF	RJK0659DPA R07DS0345EJ0300 PWSN0008DE-A RJK0659DPA
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0300 Rev.3.00 Jul 24, 2013 Features • • • • • For Automotive application Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive	Original	PDF	RJK0631JPD R07DS0252EJ0300 AEC-Q101 PRSS0004ZD-C

Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0651DPB R07DS0076EJ0102 Previous: REJ03G1765-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V)  Pb-free  Halogen-free	Original	PDF	RJK0651DPB R07DS0076EJ0102 REJ03G1765-0101) PTZZ0005DA-A curr9044
RJK0653DPB Abstract: No abstract text available Text: Preliminary Datasheet RJK0653DPB R07DS0078EJ0102 Previous: REJ03G1760-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free	Original	PDF	RJK0653DPB R07DS0078EJ0102 REJ03G1760-0101) PTZZ0005DA-A cur9044 RJK0653DPB
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0628JPE Silicon N Channel MOS FET High Speed Power Switching R07DS0336EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 2.6 mΩ typ. Capable of 4.5 V gate drive	Original	PDF	RJK0628JPE R07DS0336EJ0100 AEC-Q101 PRSS0004AE-B
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0658DPA R07DS0344EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 9.0 mΩ typ. (at VGS = 10 V)	Original	PDF	RJK0658DPA R07DS0344EJ0100 PWSN0008DC-B
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline	Original	PDF	RJK0603DPN-E0 R07DS0654EJ0100 O-220AB PRSS0004AC-A O-220AB)
RJK0654DPB Abstract: No abstract text available Text: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)	Original	PDF	RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline	Original	PDF	RJK0602DPN-E0 R07DS0653EJ0100 O-220AB PRSS0004AC-A O-220AB)
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0601DPN-E0 R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 110 A, 3.1 m Features •    High speed switching Low drive current Low on-resistance RDS on = 2.5 m typ. (at VGS = 10 V) Package TO-220AB Outline	Original	PDF	RJK0601DPN-E0 O-220AB R07DS0652EJ0200 PRSS0004AG-A O-220AB)
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline	Original	PDF	RJK0602DPN-E0 O-220AB R07DS0653EJ0100 PRSS0004AC-A O-220AB)
RJK0632 Abstract: R07DS0342EJ0100 RJK0632JPD-00 RJK0632JPD Text: Preliminary Datasheet RJK0632JPD Silicon N Channel MOS FET High Speed Power Switching R07DS0342EJ0100 Rev.1.00 May 11, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 29 mΩ typ. Capable of 4.5 V gate drive	Original	PDF	RJK0632JPD AEC-Q101 R07DS0342EJ0100 PRSS0004ZD-C RJK0632 RJK0632JPD-00 RJK0632JPD

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RJK06 Search Results

RJK06 Result Highlights (5)

RJK06 Price and Stock

Renesas Electronics Corporation RJK0651DPB-00-J5

Renesas Electronics Corporation RJK0658DPA-00-J5A

Renesas Electronics Corporation RJK0660DPA-00-J5A

Renesas Electronics Corporation RJK0659DPA-00-J5A

Renesas Electronics Corporation RJK0654DPB-00-J5

RJK06 Datasheets (18)

RJK06 Datasheets Context Search

RJK0652DPB

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RJK0656DPB

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RJK0654DPB

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RJK0654DPB

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RJK0659DPA

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RJK0653DPB

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RJK0654DPB

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RJK0632