QS 100 NPN Transistor
Abstract: NPN transistor mhz s-parameter transistor w 431 IC 431 2SC4536 IC 7482 534-1 MAG RF Transistor s-parameter 638 transistor transistor rf
Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4536 DESCRIPTION •Low Noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz ·Low Distortion IM2 = 57.5 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA
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2SC4536
QS 100 NPN Transistor
NPN transistor mhz s-parameter
transistor w 431
IC 431
2SC4536
IC 7482
534-1 MAG
RF Transistor s-parameter
638 transistor
transistor rf
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Using Linvill Techniques
Abstract: Y11E MM1941 AN238 power 2N2221A 2N3308 AN238 small signal transistor MOTOROLA NPN transistor 2n2221a RF Transistor Selection
Text: Order this document by AN238/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN238 Transistor Mixer Design Using 2–Port Parameters Prepared by: Ernest Klein Applications Engineering ABSTRACT Mixer circuit design may be simplified by the use of small–signal admittance parameters. This note describes in
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AN238/D
AN238
Using Linvill Techniques
Y11E
MM1941
AN238 power
2N2221A
2N3308
AN238
small signal transistor MOTOROLA
NPN transistor 2n2221a
RF Transistor Selection
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motorola transistor
Abstract: Using Linvill Techniques for R. F. Amplifiers MM1941 2N2221 Using Linvill Techniques transistor for RF amplifier and mixer an238 motorola amplifier mixer circuit high frequency mixer 2N2221A
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by AN238/D AN238 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Transistor Mixer Design Using 2-Port Parameters
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AN238/D
AN238
motorola transistor
Using Linvill Techniques for R. F. Amplifiers
MM1941
2N2221
Using Linvill Techniques
transistor for RF amplifier and mixer
an238 motorola
amplifier mixer circuit
high frequency mixer
2N2221A
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Untitled
Abstract: No abstract text available
Text: KSD1273 NPN EPITAXIAL SILICON TRANSISTOR HIGH hFE, AF POWER AMPLIFIER TO-220F • ”Full Pack” Package for Simplified Mounting Only by a Screw, Requires no Insulator. ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage
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KSD1273
O-220F
10ications
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Untitled
Abstract: No abstract text available
Text: KSC2759 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSCILLATOR FOR UHF TUNER SOT-23 ABSOLUTE MAXIMUM RATINGS TA =25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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KSC2759
OT-23
900MHz,
935MHz
115dications
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amplifier sot-89
Abstract: KSA1203 KSC2883
Text: KSC2883 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SOT-89 • 3W Output Application • Collector Dissipation PC=1~2W: Mounted on Ceramic Board • Complement to KSA1203 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage
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KSC2883
OT-89
KSA1203
250mm
amplifier sot-89
KSA1203
KSC2883
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KSB1121
Abstract: KSD1621
Text: KSD1621 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT DRIVER APPLICATIONS • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 SOT-89 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic
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KSD1621
KSB1121
OT-89
250mm
KSB1121
KSD1621
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TRANSISTOR MJD122
Abstract: TRANSISTOR tip122 MJD122 TIP122 NPN Transistor 8A
Text: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ - I “ Suffix) • Electrically Similar to Popular TIP122
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MJD122
TIP122
TRANSISTOR MJD122
TRANSISTOR tip122
MJD122
TIP122
NPN Transistor 8A
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KSD1616
Abstract: KSD1616A KSB1116
Text: KSD1616/1616A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSB1116/1116A ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage : KSD1616 : KSD1616A Collector-Emitter Voltage : KSD1616
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KSD1616/1616A
KSB1116/1116A
KSD1616
KSD1616A
PW10ms,
KSD1616
KSD1616A
KSB1116
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PZTA29
Abstract: No abstract text available
Text: PZTA29 NPN Darlington Transistor PZTA29 NPN Darlington Transistor • This device designed for applications requiring extremely high current gain at collector currents to 500mA. • Sourced from process 03. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter
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PZTA29
PZTA29
500mA.
OT-223
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MW MARK
Abstract: MMBTA13 MPSA14
Text: MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 1 SOT-23 Mark: 1M 1. Base 2. Emitter 3. Collector
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MMBTA13
MPSA14
OT-23
MMBTA13
MW MARK
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Transistor B C 458
Abstract: MPSA13 transistor c 458 MPS-A13 c 458 c transistor transistor 458 MPSA14
Text: MPSA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings
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MPSA13
MPSA14
MPSA13
Transistor B C 458
transistor c 458
MPS-A13
c 458 c transistor
transistor 458
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Untitled
Abstract: No abstract text available
Text: PZTA29 NPN Darlington Transistor PZTA29 NPN Darlington Transistor • This device designed for applications requiring extremely high current gain at collector currents to 500mA. • Sourced from process 03. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter
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PZTA29
PZTA29
500mA.
OT-223
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KSC900
Abstract: No abstract text available
Text: KSC900 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 • Collector-Base Voltage VCBO=30V • Low Noise Level NL=50mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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KSC900
KSC900
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K*D1691
Abstract: KSB1151 KSD1691
Text: KSD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 • HIGH POWER DISSIPATION: PC = 1.3W TA=25°C • Complementary to KSB1151 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector- Base Voltage Collector-Emitter Voltage
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KSD1691
O-126
KSB1151
PW10ms,
Cycle50%
K*D1691
KSB1151
KSD1691
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Untitled
Abstract: No abstract text available
Text: KSC1222 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY LOW NOISE AMPLIFIER TO-92 • Collector-Base Voltage: VCBO=50V • Low Noise Level: NL=40mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage
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KSC1222
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KSC2383
Abstract: tv vertical ic circuit list
Text: KSC2383 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT COLOR TV VERTICAL DEFLECTION OUTPUT TO-92L ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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KSC2383
O-92L
KSC2383
tv vertical ic circuit list
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FJP13007
Abstract: electronic ballast with npn transistor
Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted
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O-220
FJP13007
electronic ballast with npn transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from
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200mA
Q62702-C2481
BCR400W
OT-343
Ufl235b05
BCR400
EHAD7217
3235b05
EHA07219
0235tiGS
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pml 003 am
Abstract: ic pml 003 am ssm2210p 40nV cascode miller capacitance lc 7130
Text: SSM-2210 PMÏ AUDIO DUAL MATCHED NPN TRANSISTOR S p ie ^ FEATURES • • • • • • • V e ry L o w V o lta g e N o is e @ 100Hz, 1n V /\/H z M AX E x c e lle n t C u rre n t G ain M a t c h .0.5% TYP T ig h t V B£ M a tch VQS) . 2 0 0 n V M A X
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SSM-2210
100Hz,
pml 003 am
ic pml 003 am
ssm2210p
40nV
cascode miller capacitance
lc 7130
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Untitled
Abstract: No abstract text available
Text: -T -Z .1 -Z 3 Differential Amplifiers Continued Bipolar Monolithic Dual Transistors — NPN *B1-2 PART NUMBER PACKAGE VBE 1-2 mV Max pVI°C Max a v be (Note 1) h FE (Note 1) nA Min Max b V ceo V Min •CBO nA Max NF dB Max ff MHz @ lc Min c obo pF Max COMMENTS
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2N2920
2N4044
2N4045
2N4100
2N4878
2N4879
2N4880
IT120A
IT121
IT122
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Untitled
Abstract: No abstract text available
Text: KSD1417 NPN SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSB1022 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Symbol
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KSD1417
KSB1022
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2SK621
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D 15) n Main Characteristics n V ds Application ü * V dsx LJ LI LI U LJ Neh 2 elements (V) *30 50 XN1872 n (A) (V) Basic gm loss (mA) (mS) 0.02 0.5 - 1 2 0.1 - V ds Id (mA)
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2SK198
2SK621
XN1871
XN1872
XN1D873/XP1D873
XN1D874/XP1D874
2SK1103
2SK1842
AUN228
AUN230
2SK621
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CA3097 equivalent
Abstract: CA3097E SCR 30v triggering circuit RCA-CA3097E volvo scr CA3097 PNP monolithic Transistor Arrays TA6281 0014L diode ZENER 927
Text: G E SOLID STATE Ql D E | 3075001 00141,55 7 Arrays CA3097 'Y 'q 3 Thyristor/Transistor Array '25 For Military, Comm ercial, and Industrial Applications Features: • Com plete isolation between elements m n-p-n transistor - Vceo = 3 0 V m in . /c = 100 mA (max.)
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CA3097
RCA-CA3097E*
92CS-21934
92CS-22176
CA3097 equivalent
CA3097E
SCR 30v triggering circuit
RCA-CA3097E
volvo scr
CA3097
PNP monolithic Transistor Arrays
TA6281
0014L
diode ZENER 927
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