Untitled
Abstract: No abstract text available
Text: s e MIKRO n SKiiP 362 GD 060 - 352 WT Absolute Maximum Ratings Symbol Values Units Operating DC link voltage T h e a ts in k —25 °C T h eatsin k = 25 °C; tp < 1 ms IGBT & Diode AC, 1 min. T heatsin k = 25 °C T heatsin k = 25 °C; tp < 1 ms tp = 10 ms; sin.; T j = 150 °C
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
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Untitled
Abstract: No abstract text available
Text: s î M IK R D n SKiiP 262 GD 060 - 351 WT Absolute Maximum Ratings Symbol V a lu e s Units 600 400 200 400 - 5 5 . . . + 150 2500 200 400 1450 10,5 V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/ns °C | C onditions1 IGBT & Inve rse Diode VcES Operating DC link voltage
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
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Untitled
Abstract: No abstract text available
Text: SEMIKRON SKiiP 292 GD 170 - 372 WT Absolute Maximum Ratings Symbol |Conditions1 V a lu e s Units 1700 1200 250 500 - 5 5 . . . + 150 4000 230 500 2160 23,4 V V A A °C V A A A kA2S 18 30 75 - 2 5 . . . + 85 V V kV/|xs °C IGBT & Inverse Diode V ces V c c 101
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skiip gb 120
Abstract: No abstract text available
Text: 5EMIKRDN SKiiP 1092 GB 170 - 470 WT/FT Absolute Maximum Ratings Symbol | Conditions 1 Values Units 1700 1200 1000 2000 - 5 5 . . . + 150 4000 830 2000 8600 374 V V A A °C V A A A kA2s 18 30 75 -2 5 0 ) .+ 85(70) V V kV/jXS °C IGBT & Inve rse Diode V ces
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613bb71
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skiip gb 120
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semikron skiip 1212 GB 120
Abstract: No abstract text available
Text: s e M IK R O n SKiiP 1212 GB 120 - 402 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 1200 2400 - 5 5 . . . + 150 3000 5 990 2400 8600 374 V V A A °C V A A A kA2s 18 30 75 - 25 0 ) . .+ 85(70) V V kV/|is °C | Conditions1> IGBT & Inve rse Diode
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613bb71
QQ05Q01
0GQ50G3
semikron skiip 1212 GB 120
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skiip gb 120
Abstract: No abstract text available
Text: s e m ik r o n SKiiP 802 GB 120 - 401 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 800 1600 - 5 5 . . . + 150 3000 51 800 1600 8600 374 V V A A A kA2s 18 30 75 - 2 5 0 . . . + 85(70) V V kV/jiS <C | Conditions1> IGBT & Inve rse Diode V ces
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QQ05Q01
ai3bb71
0GQ50G3
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skiip gb 120
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SKIIP 602 GB 120 301 FT
Abstract: No abstract text available
Text: s e m ik r d n SKiiP 602 GB 120 - 301 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5 600 1200 6480 210 V V A A °C A A A kA2s 18 30 75 - 25 0 ) . . . + 85(70) V V kV/[is °C | Conditions1> IGBT & Inve rse Diode
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00G5D04
SKIIP 602 GB 120 301 FT
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Untitled
Abstract: No abstract text available
Text: Ô13bb71 00GSQ32 2S7 SKiiPPACK S K integrated intelligent Power P A CK 3-phase bridge with brake chopper SKiiP 202 G D L 120 + Driver 404 WT E/U 3) SKiiP 202 GDL 120 - 404 WT (E/U) Driver for 3-phase bridge and brake chopper Absolute Maximum Ratings 3-phase
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13bb71
00GSQ32
613bb71
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ai3bb71
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SKiiP 613 GB
Abstract: No abstract text available
Text: s e MIKRDN SKiiP 612 GB 120-203 WT Absolute Maximum Ratings Symbol |Conditions 1 V a lu e s Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5) 490 1200 4300 93 V Operating DC link voltage Theatsink = 25 °C Theatsink = 25 °C; tp < 1 mS IGBT & Diode AC, 1 min.
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SKiiP 613 GB
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SKiiP 613 GB
Abstract: No abstract text available
Text: s e MIKRO n SKiiP 202 GD 120 - 300 WT Absolute Maximum Ratings Symbol | Conditions Values Units 1200 900 200 400 - 55 . . . + 150 3000 5 200 400 2160 23,4 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|±s 1> IGBT & Inve rse Diode V ces V is o |4)
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613bb71
QQ05Q01
0GQ50G3
SKiiP 613 GB
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SKiiP 613 GB
Abstract: No abstract text available
Text: •I filBbib?! GGD5D51 SKiiP 192 G D L170 - 471 WT Absolute Maximum Ratings Symbol | Conditions11 Values Units 1700 1200 150 300 - 5 5 . . . + 150 3500 150 300 1450 10,5 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|is °C IGBT & Inve rse Diode
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GGD5D51
613bb71
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SKiiP 613 GB
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semikron skiip 792
Abstract: No abstract text available
Text: s e MIKRO n SKiiP 792 GB 170 - 370 WT/FT Absolute Maximum Ratings Sym bol Values Units 1700 1200 750 1500 - 5 5 . . . + 150 4000 620 1500 6480 210 V V A A °C V A A A kA2s 18 30 75 - 25 0 . . . + 85(70) V V kV/ns °C | C o n d itio n s 1> IGBT & Inve rse Diode
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VS210>
613bb71
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ai3bb71
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semikron skiip 792
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Untitled
Abstract: No abstract text available
Text: s e MIKRD n SKiiP 912 GB 120 - 303 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 900 1800 - 5 5 . . . + 150 3000 5 740 1800 6480 210 V V A A °C V A A A kA2s 18 30 75 -2 5 0 ).+ 85(70) V V kV/|iS °C |Conditions 1) IGBT & Inve rse Diode V ces
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VS210>
613bb71
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SKiiP 613 GB
Abstract: No abstract text available
Text: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C
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613bb71
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SKiiP 613 GB
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Untitled
Abstract: No abstract text available
Text: s e M IK R D n SKiiP 192 GD 170 - 371 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units 1700 1200 150 300 - 5 5 . . . + 150 4000 150 300 1450 10,5 ICM T j 3 Visoi4> If I fm Ifsm l2t Diode) Driver Vsi VS291 dv/dt Stabilized power supply Nonstabilized power supply
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Diode LT 404
Abstract: No abstract text available
Text: s e M IK R D n SKiiP 312 GDL 120 - 404 WT E/U Absolute Maximum Ratings Symbol | Conditions Values Units 1200 - 5 5 . . . + 150 V V A A °C 3 0 0 0 5) V 240 A A A kA2s 11 IGBT & Invcsrse Diode Vces Operating DC link voltage Vc c 10) Theatsink — 2 5 °C
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Diode LT 404
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Untitled
Abstract: No abstract text available
Text: s e MIKROn SKiiP 102 GD 120 - 304 WT Absolute Maximum Ratings |Conditions 1> V a lu e s Units IGBT & Inverse Diode V ces Operating DC link voltage Vcc 10 T heatsink = 25 °C lc T heatsin k = 25 °C, tp < 1 ms ICM IGBT & Diode Ti 3’ , AC, 1 min. Visol41
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613bb71
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skf control board
Abstract: No abstract text available
Text: Û13bh71 V rms V QÜOSGbB • drm Irm s V rrm on heatsink P16/260 F with axial fan SKF16B-230-01 V SKiiP W3C Thyristor 3~AC Switch for continuous operation, Tamb = 35 °C mounted V 3 x 325 A 3 X 445 A 3 X 520 A SKiiP SKiiP SKiiP s e M IK R D n recom. RC snubber
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13bh71
P16/260
SKF16B-230-01
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skf control board
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Untitled
Abstract: No abstract text available
Text: • fll3bb71 0Q05G55 Ô 54 SKiiP 292 G D L 170 - 472 WT Absolute Maximum Ratings Symbol Values Units 1700 1200 250 500 - 5 5 . . . + 150 3500 230 500 2160 23,4 V V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/jxs °C |Conditions 11 IGBT & Inve rse Diode V ces
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fll3bb71
0Q05G55
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skiip gb 120
Abstract: No abstract text available
Text: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C
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613bb71
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ai3bb71
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skiip gb 120
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Untitled
Abstract: No abstract text available
Text: • fll3fc. fc. 71 □□□5D31 310 S K iiP P A C K S K iiP 202 G D L 120 - 400 W T E/U A b s o lu te M a xim u m R a tin g s Values Units IGBT & Inve rse Diode V ces Operating D C link voltage V c c 10) T h e a tsin k = 25 °C lc T h e a tsin k — 25 °C; tp < 1 ms
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Untitled
Abstract: No abstract text available
Text: s e M IK R D n SKiiP 592 GB 170 - 270 WT Absolute Maximum Ratings Symbol IG B T | Conditions1 Values Units Operating DC link voltage T h eatsink = 25 °C T heatsink = 25 °C; tp < 1 ms I G B T & Diode AC, 1 min. T h eatsink = 25 °C T h ea tsink = 25 °C| tp < 1 ms
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613bb71
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ai3bb71
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00G5D04
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