QLBB077 Search Results
QLBB077 Datasheets Context Search
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Contextual Info: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read |
OCR Scan |
28F020 2048K AP-316 AP-325 -80V05, -80V05 28F020 4a2bl75 Qlbb077 |