Untitled
Abstract: No abstract text available
Text: IRFS150A A dvanced Power MOSEET FEATURES B VDSS - 100 V Rugged Gate Oxide Technology ^ D S o n = 0 -0 ^ ^ • Lower Input Capacitance lD = 31 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA (Max.) @ V DS= 1 0 0 V
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IRFS150A
0G3b333
QG3b33M
G03b335
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Untitled
Abstract: No abstract text available
Text: KA3S0880RF SAMSUNG POWER SWITCH Sa m su n g P o w e r Sw it c h The SPS product family is specially designed for an offline SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,
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KA3S0880RF
0G3b333
QG3b33M
G03b335
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Untitled
Abstract: No abstract text available
Text: SSF17N60A Advanced Power MOSFET FEATURES = b v d ss 600 V • Avalanche Rugged Technology ^D S on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 pA(Max.) @ V 03 = 600V
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SSF17N60A
D04D171
0G3b333
QG3b33M
G03b335
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SSF4N90AS
Abstract: EL DRIVER 3-STAGE
Text: SSF4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS= 900V
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SSF4N90AS
ib4142
0DM0201
003b333
003b33M
D03b335
SSF4N90AS
EL DRIVER 3-STAGE
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tvn 610
Abstract: SSF45N20A
Text: SSF45N20A Advanced Power MOSFET FEATURES BV0SS = 200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS = 200V
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SSF45N20A
003b333
003b33M
D03b335
tvn 610
SSF45N20A
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Untitled
Abstract: No abstract text available
Text: SSF8N90A Advanced Power MOSFET FEATURES B V DSs = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe OperatingArea ■ Lower Leakage Current :25pA Max. @ VDS= 900V
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SSF8N90A
0G3b333
QG3b33M
G03b335
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Untitled
Abstract: No abstract text available
Text: SSF25N40A Advanced Power MOSFET FEATURES BV0SS = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ H RoS on = 0 -2 ß Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA(Max.) @ VDS= 400V
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SSF25N40A
0-162iJ
0G3b333
QG3b33M
G03b335
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Untitled
Abstract: No abstract text available
Text: IRFS340A A dvanced Power MOSEET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V ■ Lower RDS(ON) : 0.437 £1 (Typ.)
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IRFS340A
0G3b333
QG3b33M
G03b335
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74142
Abstract: SSF10N80A 115U ssv 620 00401ST
Text: SSF10N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 |iA Max. @ V ^ = 800V
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SSF10N80A
00401ST
003b333
003b33M
D03b335
74142
SSF10N80A
115U
ssv 620
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74142
Abstract: SSF5N90A
Text: SSF5N90A Advanced Power MOSFET FEATURES BVDss - 900 V • Avalanche Rugged Technology ^DS on = 2.9 £2 Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V
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SSF5N90A
003b333
003b33M
D03b335
74142
SSF5N90A
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IRF 850 mosfet
Abstract: IRF 850 250M SSF70N10A
Text: Advanced Power MOSFET SSF70N10A FEATURES • ■ ■ ■ ■ ■ BVdss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature RDS on — 0.023 Í2
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SSF70N10A
175oC
04G237
003b333
003b33M
D03b335
IRF 850 mosfet
IRF 850
250M
SSF70N10A
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SSF6N80A
Abstract: No abstract text available
Text: SSF6N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Ros on = 2 .0 Q ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 piA (Max.) @ VDS = 800V
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SSF6N80A
GD4D22S
003b333
003b33M
D03b335
SSF6N80A
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SSF6N90A
Abstract: No abstract text available
Text: SSF6N90A Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS= 900V
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SSF6N90A
G0MG231
003b333
003b33M
D03b335
SSF6N90A
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SSF22N50A
Abstract: 74142
Text: SSF22N50A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS = 500V
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SSF22N50A
0GMG177
003b333
003b33M
D03b335
SSF22N50A
74142
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Untitled
Abstract: No abstract text available
Text: KA3S0680RF SAMSUNG POWER SWITCH Sa m su n g P o w e r Sw it c h The SPS product family is specially designed for an offline SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,
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KA3S0680RF
0G3b333
QG3b33M
G03b335
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Untitled
Abstract: No abstract text available
Text: IRFS350A A dvanced Power MOSEET FEATURES B V DSS - 400 V Rugged Gate Oxide Technology ^ D S o n = 0 .3 ^ • Lower Input Capacitance lD = 11.5 A ■ Improved Gate Charge ■ Avalanche Rugged Technology ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ V DS = 400V
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IRFS350A
0G3b333
QG3b33M
G03b335
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L65A
Abstract: SSF10N90A FI-80 717 MOSFET 74142
Text: SSF10N90A Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 6.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @
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SSF10N90A
003b333
003b33M
D03b335
L65A
SSF10N90A
FI-80
717 MOSFET
74142
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SSF7N60A
Abstract: LD101
Text: SSF7N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25nA Max. @ V DS = 600V
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SSF7N60A
0G4D243
003b333
003b33M
D03b335
SSF7N60A
LD101
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SSF7N90A
Abstract: D-0402
Text: SSF7N90A Advanced Power MOSFET FEATURES = 9 0 0 R û S o n = 1 .8 5 A b • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 fiA (Max.) @ VDS= 900V
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SSF7N90A
7Tb4142
GG402S5
003b333
003b33M
D03b335
SSF7N90A
D-0402
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Untitled
Abstract: No abstract text available
Text: IRFS244A A dvanced Power MOSEET FEATURES BVDSS - 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = 0.28 Q. lD = 10.2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V
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IRFS244A
0G3b333
QG3b33M
G03b335
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Untitled
Abstract: No abstract text available
Text: KA3S0965RF SAMSUNG POWER SWITCH Sa m su n g P o w e r Sw it c h The SPS product family is specially designed for an offline SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,
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OCR Scan
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KA3S0965RF
0G3b333
QG3b33M
G03b335
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SSF7N80A
Abstract: No abstract text available
Text: SSF7N80A A d van ced Power MOSFET FEATURES BVdss - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS = 800V
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SSF7N80A
b4145
003b333
003b33M
D03b335
SSF7N80A
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SSF10N60A
Abstract: No abstract text available
Text: SSF10N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ ^ D S o n Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = 0 - 8 & lD = 6.9 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ V DS = 600V
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SSF10N60A
003b333
003b33M
D03b335
SSF10N60A
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SSF9N90A
Abstract: No abstract text available
Text: SSF9N90A A d van ced Power MOSFET FEATURES B ^D S S Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 }iA Max. ■ Low RDS(0N) : 0.938 Q (Typ.) “ ^ D S (o n ) “
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SSF9N90A
100dc)
003b333
003b33M
D03b335
SSF9N90A
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