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    SSF6N80A

    Abstract: No abstract text available
    Text: SSF6N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Ros on = 2 .0 Q ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 piA (Max.) @ VDS = 800V


    OCR Scan     		PDF SSF6N80A GD4D22S 003b333 003b33M D03b335 SSF6N80A