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    Text: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is


    OCR Scan     		PDF BUZ384 bbS3i31 00147T0 BUZ384 T-39-13 bb53T31 bb53T31 Q0147TS