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    PZT2222 Price and Stock

    onsemi PZT2222AT1G

    TRANS NPN 40V 0.6A SOT223
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    DigiKey PZT2222AT1G Reel 100,000 1,000
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    Mouser Electronics PZT2222AT1G 53,712
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    Verical PZT2222AT1G 271,000 1,000
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    Arrow Electronics PZT2222AT1G 271,000 10 Weeks 1,000
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    PZT2222AT1G 79,000 10 Weeks 1,000
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    Newark PZT2222AT1G Cut Tape 4,885 1
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    PZT2222AT1G Reel 1,000
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    Onlinecomponents.com PZT2222AT1G 40,000
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    PZT2222AT1G 3,959
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    PZT2222AT1G 1,335 12
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    PZT2222AT1G 132
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    Rochester Electronics PZT2222AT1G 1,000 1
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    TME PZT2222AT1G 4,647 1
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    Ameya Holding Limited PZT2222AT1G 15,499
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    Avnet Asia PZT2222AT1G 10 Weeks 14,000
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    Avnet Silica PZT2222AT1G 23,000 11 Weeks 1,000
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    Master Electronics PZT2222AT1G 40,000
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    New Advantage Corporation PZT2222AT1G 769,000 1
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    Nexperia PZT2222A,115

    TRANS NPN 40V 0.6A SOT223
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    DigiKey PZT2222A,115 Reel 23,700 1,000
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    Mouser Electronics PZT2222A,115 17,146
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    Verical PZT2222A,115 205,000 1,000
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    PZT2222A,115 6,000 8 Weeks 1,000
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    Rochester Electronics PZT2222A,115 496,580 1
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    Chip1Stop PZT2222A,115 Cut Tape 3,360
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    PZT2222A,115 Cut Tape 2,775
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    Nexperia PZT2222A,135

    TRANS NPN 40V 0.6A SOT223
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    DigiKey PZT2222A,135 Cut Tape 23,481 1
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    PZT2222A,135 Digi-Reel 23,481 1
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    PZT2222A,135 Reel 20,000 4,000
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    Mouser Electronics PZT2222A,135 5,415
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    Verical PZT2222A,135 7,805 1,066
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    onsemi PZT2222AT3G

    TRANS NPN 40V 0.6A SOT223
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    DigiKey PZT2222AT3G Cut Tape 16,371 1
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    PZT2222AT3G Digi-Reel 16,371 1
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    PZT2222AT3G Reel 12,000 4,000
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    Micro Commercial Components PZT2222A-TP

    TRANS NPN 40V SOT223
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    DigiKey PZT2222A-TP Digi-Reel 3,835 1
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    Verical PZT2222A-TP 27,500 2,500
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    PZT2222 Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PZT2222 Infineon Technologies NPN Silicon Switching Transistor Original PDF
    PZT2222 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
    PZT2222 Siemens Cross Reference Guide 1998 Original PDF
    PZT2222 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    PZT2222 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    PZT2222A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PZT2222A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PZT2222A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PZT2222A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PZT2222A Kexin NPN Switching Transistor Original PDF
    PZT2222A Micro Commercial Components NPN General Purpose Amplifier Original PDF
    PZT2222(A) Unknown Silicon NPN Transistor Original PDF
    PZT2222A National Semiconductor NPN General Purpose Amplifier Original PDF
    PZT2222A NXP Semiconductors PZT2222A - NPN switching transistor - Complement: PZT2907A ; fT min: 300 MHz; hFE max: 300 ; hFE min: 100 ; IC max: 600 mA; Polarity: NPN ; Ptot max: 1150 mW; toff: 250 ns; VCEO max: 40 V Original PDF
    PZT2222A On Semiconductor Small Signal Switch NPN Original PDF
    PZT2222A Philips Semiconductors NPN switching transistor Original PDF
    PZT2222A Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
    PZT 2222A Siemens General Purpose Bipolar Transistor, PNP Dual Collector, 40V, SOT-223, 4-Pin Original PDF
    PZT2222A Siemens NPN Silicon Switching Transistors Original PDF
    PZT2222A Siemens Cross Reference Guide 1998 Original PDF

    PZT2222 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 „ ORDERING INFORMATION Ordering Number


    Original
    PDF PZT2222A OT-223 500mA. PZT2222AG-AA3-R PZT2222AL-AA3-R OT-223 PZT2222AL-AA3-R QW-R207-001

    IC 7403

    Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


    Original
    PDF MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A

    PN2222A

    Abstract: fairchild 1P MMBT2222A PZT2222A PN2222 pn222
    Text: PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223


    Original
    PDF PN2222A MMBT2222A PZT2222A 500mA. MMBT2222A PN2222A OT-23 OT-223 fairchild 1P PZT2222A PN2222 pn222

    MMBT2222A

    Abstract: PN2222A PZT2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol


    Original
    PDF MMBT2222A PZT2222A OT-23 OT-223 MMBT2222A PN2222A PZT2222A

    PZT2907AT1

    Abstract: Transistor BFR 35 PZT2222AT1 PZT2222AT1G PZT2222AT3G
    Text: PZT2222AT1 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features


    Original
    PDF PZT2222AT1 OT-223 PZT2907AT1 OT--223 OT-223 PZT2222AT1/D PZT2907AT1 Transistor BFR 35 PZT2222AT1 PZT2222AT1G PZT2222AT3G

    SOT-223 P1f

    Abstract: on semiconductor p1f p1f sot-223 PZT2222AT1 sot223 P1F onsemi SOT-223 PZT2222AT1G PZT2222AT3 PZT2222AT3G PZT2907AT1
    Text: PZT2222AT1 Preferred Device NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original
    PDF PZT2222AT1 OT-223 PZT2907AT1 OT-223 PZT2222AT1/D SOT-223 P1f on semiconductor p1f p1f sot-223 PZT2222AT1 sot223 P1F onsemi SOT-223 PZT2222AT1G PZT2222AT3 PZT2222AT3G PZT2907AT1

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PZT2222A Features • • • Surface Mount SOT- 223 Package Capable of 350mWatts of Power Dissipation ICM: 0.6A


    Original
    PDF PZT2222A 350mWatts 10mAdc, 60Vdc, 10Vdc) 150mAdc,

    Untitled

    Abstract: No abstract text available
    Text: PZT2222 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300


    Original
    PDF PZT2222 Freq250M StyleSOT-223 Code4-179

    Untitled

    Abstract: No abstract text available
    Text: PZT2222AT1 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300


    Original
    PDF PZT2222AT1 Freq300M

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 PZT2222A TRANSISTOR NPN FEATURES z Epitaxial planar die construction z Complementary PNP Type available (PZT2907A) 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    PDF OT-223 OT-223 PZT2222A PZT2907A) 150mA 500mA 500mA, 150mA,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2222A TRANSISTOR NPN SOT-223 FEATURES z Epitaxial planar die construction z Complementary PNP Type available (PZT2907A) 1 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original
    PDF OT-223 PZT2222A OT-223 PZT2907A) 150mA 500mA 500mA, 150mA,

    Untitled

    Abstract: No abstract text available
    Text: UTC PZT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 3 4 SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE


    Original
    PDF PZT2222A 500mA. OT-223 QW-R207-001

    PZT2222A

    Abstract: PZT2222A-AA3-R PZT2222AL-AA3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 *Pb-free plating product number: PZT2222AL


    Original
    PDF PZT2222A 500mA. OT-223 PZT2222AL PZT2222A-AA3-R PZT2222AL-AA3-R 16www PZT2222A PZT2222A-AA3-R PZT2222AL-AA3-R

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package


    Original
    PDF MMBT2222A PZT2222A 500mA. OT-23 OT-223 PZT2222A MMBT2222A OT-23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 „ ORDERING INFORMATION Ordering Number


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    PDF PZT2222A OT-223 500mA. PZT2222AG-AA3-R PZT2222AL-AA3-R OT-223 QW-R207-001

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PZT2222A Features • • • Surface Mount SOT- 223 Package Capable of 350mWatts of Power Dissipation ICM: 0.6A


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    PDF PZT2222A 350mWatts 10mAdc, 60Vdc, 10Vdc) 150mAdc,

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PZT2222A Features • • • • Surface Mount SOT- 223 Package Capable of 350mWatts of Power Dissipation


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    PDF PZT2222A 350mWatts 10mAdc, 60Vdc, 10Vdc) IC/10

    PZT2222A

    Abstract: PZT2907A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2907A SOT-223 TRANSISTOR PNP FEATURES y y 1 1. BASE Epitaxial planar die construction Complementary PNP Type available(PZT2222A) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-223 PZT2907A OT-223 PZT2222A) Par150mA -500mA -150mA -15mA -500mA -50mA PZT2222A PZT2907A

    PZT2222

    Abstract: PZT2222A PZT2907 PZT2907A
    Text: PZT2222 / PZT2222A PZT2222 / PZT2222A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-05-09 6.5 3 Power dissipation Verlustleistung ±0.2 1.65 ±0.1 Plastic case Kunststoffgehäuse


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    PDF PZT2222 PZT2222A OT-223 UL94V-0 PZT2222 PZT2907, PZT2907A PZT2222A PZT2907 PZT2907A

    Untitled

    Abstract: No abstract text available
    Text: PZT2222A, PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.


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    PDF PZT2222A, SPZT2222A PZT2907AT1 PZT2222AT1/D

    Untitled

    Abstract: No abstract text available
    Text: PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features


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    PDF PZT2222A OT-223 PZT2907AT1 PZT2222AT1/D

    TF411

    Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
    Text: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and


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    PDF PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 NMT2222 S0113D bSD113D 004Dbl7 TF411 national PN2222A IC VS 1307 I-00 MMPQ2222 NMT2222 PN2222A PZT2222A TR46

    Untitled

    Abstract: No abstract text available
    Text: H E M iQ Q N P U S T O R PN2222A C< B' MMBT2222A PZT2222A TO-92 SOT-23 B SOT-223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­


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    PDF PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 NMT2222 SOIC-16 PN2222A MMBT2222A

    P2T2222

    Abstract: P2T2 PZT2222 PZT2222A
    Text: 7 1 1 0 0 2 b G O b ' ^ b l Tfi3 • P H I N PZT2222 PZT2222A SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors in a microminiatureSMD envelope SOT-223 , primarily intended for linear and switching applications. PNP complements are PZT2907/2907A.


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    PDF 711002b PZT2222 PZT2222A OT-223) PZT2907/2907A. OT-223 7Z82485 P2T2222 P2T2 PZT2222A