LP1- E
Abstract: PWSN0006ZA
Text: JEITA Package Code P-HWSON6-3x3-0.80 Package Name HWSON-6 RENESAS Code PWSN0006ZA-A Previous Code MASS[Typ.] 0.022 g Under development e1 D A e1 /2 b2 Lp2 E Lp1 e e /2 b1 B Reference Symbol A2 c y S b A1 A Seating plane S A A1 A2 b b1 b2 c D E e e1 Lp1 Lp2
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PWSN0006ZA-A
LP1- E
PWSN0006ZA
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hwson-6 ion
Abstract: M2201 RQM2201DNS RQM2201DNSTL-E RQM2201DNSTR-E PWSN0006ZA a1sa
Text: RQM2201DNS Silicon N Channel MOS FET Power Switching REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Features • • • • • Small, thin and leadless type package 3 x 3 mm, t = 0.8 mm max. Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 pF typ)
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RQM2201DNS
REJ03G1492-0200
PWSN0006ZA-A
WSON0303-6
M2201"
hwson-6 ion
M2201
RQM2201DNS
RQM2201DNSTL-E
RQM2201DNSTR-E
PWSN0006ZA
a1sa
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M2201
Abstract: RQM2201DNS RQM2201DNSTL-E RQM2201DNSTR-E hwson-6 ion
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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23P transistor sot 23
Abstract: PTZZ0005DA-A PWSN0008DD-A electrical symbol PRSP0008DD-D PRSP0008DA-B PRSP0008DD-A G300721H02 TSSOP-8 8d
Text: Unit:mm Reel type A B Ｃ Ｄ E F A 330 330 178 178 330 178 W 12 12 12 P1 8 8 8 A0 4.8 6.9 7 12.0 8.0 4.8 N 80 100 60 60 100 66 W1 13.5 13.5 13 13 13.4 13.5 W2 17.5 17.5 17 15.4 17.4 15.5 12-mm width emboss taping Taping code Package name Renesas code Previous code
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12-mm
G300721H02
MTE1208G-8P2S-A
MTE1208H-8P2J
OT-89
PLZZ0004CB-A
PRSP0008DA-B
PTSP0008JA-A
TSOT89
TE1208-5P,
23P transistor sot 23
PTZZ0005DA-A
PWSN0008DD-A
electrical symbol
PRSP0008DD-D
PRSP0008DA-B
PRSP0008DD-A
G300721H02
TSSOP-8 8d
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hwson-6 ion
Abstract: No abstract text available
Text: RQM2201DNS Silicon N Channel MOS FET Power Switching REJ03G1492-0100 Rev.1.00 Dec 12, 2006 Features • • • • • Small, thin and leadless type package 3 x 3 mm, t = 0.8 mm max. Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 pF typ)
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RQM2201DNS
REJ03G1492-0100
PWSN0006ZA-A
WSON0303-6
M2201"
hwson-6 ion
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PDF
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