PULSED POWER CHARACTERISTIC Search Results

LF5661-1

Abstract: power thyristor Thyratron Ignitron thyristor firing circuits ACR300 DYNEX PT40 thyristor firing METHODS Thyristor pulse transformer
Contextual Info: Pulsed Power www.dynexsemi.com 1 Pulsed Power Pulsed Power Pulsed Power can be defined as electrical energy that is delivered as single or repeated pulses of relatively short duration such that the peak power delivered is high but the average power is low.

LF5661-1

Abstract: power thyristor 40kv transformer ACR300 crowbar Thyristor pulse transformer PT40 water cooled thyristor assembly Dynex DYNEX Thyristor
Contextual Info: Pulsed Power www.dynexsemi.com 1 Pulsed Power Pulsed Power can be defined as electrical energy that is delivered as single or repeated pulses of relatively short duration, such that the peak power delivered is high but the average power is low. A characteristic of narrow

1030mhz

Abstract: 2TD12 HV400 SM200 1090mhz
Contextual Info: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed

clothes iron

Abstract: L6720 LLD1005E01
Contextual Info: INFRARED PULSED LASER DIODE L6720 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) RELATIVE RADIANT POWER (%) 100 2.5 ep (Ｗ) 3.0 PULSED RADIANT POWER L6720 Figure 3: Typical Emission Spectrum 2.0

cermolox

Abstract: TP105 burle "Power Tube"
Contextual Info: 4665 Power Tube UHF Pulsed Power Amplifier Tube - Cermolox - Forced-Air-Cooled - Coaxial Terminals - Full Input to 1215 MHz - 65kW Peak Pulsed Power Output - Controlled Interelectrode Capacity The BURLE 4665 is designed for use as a reliable UHF pulsed

FP18

Abstract: CD 910 radar range finder L7695-04 laser diode symbols
Contextual Info: Pulsed Laser Diode L7695-04 HAM AM ATSU preliminary data •Applications Laser Radar Range Finder Excitation Light Source ■ABSOLUTE MAXIMUM RATINGS Tc=25°C Characteristics Pulsed Forward Current Reverse Voltaqe Pulsed Radiant Output Power Pulse Duration

laser diod

Abstract: for LASER RANGE FINDER L7690-02 LD chip radar range finder
Contextual Info: 860nm Pulsed Laser Diode L7690-02 HAM AMATSU prelim inary data •Applications Laser Radar Range Finder Excitation Light Source ■ABSOLUTE MAXIMUM RATINGS Tc=25°C Characteristics Pulsed Forward Current Reverse Voltage Pulsed Radiant Output Power Pulse Duration

L-Band 1200-1400 MHz

Abstract: diode gp 429 Radar x band radar HV400
Contextual Info: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor

laser diode mosfet triggering circuit

Abstract: PULSED LASER DIODE DRIVER spl pl90 0 ll90_3 SPL LL90 SPL PL90_3 2 Wavelength Laser Diode mosfet triggering circuit adaptive cruise control laser diode lifetime
Contextual Info: Opto Semiconductors Overview: OSRAM Opto Semiconductors Pulsed Laser Diodes 1. Applications of high power pulsed laser diodes OSRAM Opto Semiconductors pulsed laser diodes provide high power tens of watts short (several nanoseconds) optical pulses in the near infra-red regime.

dr25 diode specifications

Abstract: DR25 Diode OP 741 L6690 free download led wiring guide LLD1002E01
Contextual Info: INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 1.0 1.5 2.0 2.5 40 20 830 3.0 ●High duty ratio (DR≦2.5%)

28F0181-1SR-10

Abstract: CAPACITOR 150 RED
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Radar

Abstract: diode gp 429 HV400 hvvi transistor 1150
Contextual Info: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

NI-400

Abstract: diode gp 429 HV400
Contextual Info: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

ATC100B620

Abstract: L22 amplifier Gan hemt transistor RFMD
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

3640p

Contextual Info: PULSED POWER CAPACITORS NOVACAP offers a line of MLC pulsed power chip capacitors, sizes 1825, 3530, 3640, 7565, which provide exceptional discharge energy at elevated voltages. These devices are manufactured using a unique dielectric formulation which has a

RF3928B

Abstract: power transistor gan s-band RF392
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

atc100a150

Abstract: power transistor gan s-band
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

GaN hemt

Abstract: power transistor gan s-band air surveillance system diagram using radar
Contextual Info: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 