PU3173
Abstract: PU3273 PUA3173 PUA3273
Text: Power Transistor Arrays PUA3173 PU3173 Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUA3273 (PU3273) Unit: mm 9.5±0.2 1.65±0.2 • Features • High forward current transfer ratio hFE • High-speed switching
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PU3173
Abstract: PU3273 PUA3173 PUA3273
Text: Power Transistor Arrays PUA3173 PU3173 Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUA3273 (PU3273) Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
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PUA3173
PU3173)
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PU3273)
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Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUA3273 PU3273 Silicon PNP triple diffusion planar type darlington For power amplification Complementary to PUA3173 (PU3173) Uni: mm 20.2±0.3 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating VCBO −150 V Collector-emitter voltage (Base open)
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PUA3273
PU3273)
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PU3173)
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Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUA3173 PU3173 Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUA3273 (PU3273) Unit: mm 20.2±0.3 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating VCBO 150 V Collector-emitter voltage (Base open)
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PU3173)
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PU3273)
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PU3173
Abstract: PU3273 PUA3173 PUA3273
Text: Power Transistor Arrays PUA3273 PU3273 Silicon PNP triple diffusion planar type darlington For power amplification Complementary to PUA3173 (PU3173) Uni: mm 9.5±0.2 1.65±0.2 • Features • High forward current transfer ratio hFE • High-speed switching
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PUA3273
PU3273)
PUA3173
PU3173)
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Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUA3273 PU3273 Silicon PNP triple diffusion planar type darlington For power amplification Complementary to PUA3173 (PU3173) Uni: mm M Di ain sc te on na tin nc ue e/ d 9.5±0.2 1.65±0.2 • Features 4.0±0.2 8.0±0.2 20.2±0.3 Solder Dip
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PU3273)
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PU3173)
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PU3173
Abstract: PU3273 PUA3273 free transistor book PUA3173
Text: Power Transistor Arrays PUA3273 PU3273 Silicon PNP triple diffusion planar type darlington For power amplification Complementary to PUA3173 (PU3173) Uni: mm • Absolute Maximum Ratings TC = 25°C Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
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PU3273)
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PU3173)
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PUA3273
free transistor book
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Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUA3173 PU3173 Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUA3273 (PU3273) Unit: mm M Di ain sc te on na tin nc ue e/ d 9.5±0.2 1.65±0.2 • Features 4.0±0.2 8.0±0.2 20.2±0.3
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PU3173)
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PU3273)
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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