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Untitled Abstract: No abstract text available Text: Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications.	Original	PDF	NESG2021M05 R09DS0034EJ0300
Untitled Abstract: No abstract text available Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz	Original	PDF	NESG2021M05 NESG2021M05-A NESG2021M05-T1-A PU10188EJ02V0DS
Untitled Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. NESG2021M05 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • • <R> This device is an ideal choice for low noise, high-gain at low current amplifications.	Original	PDF	NESG2021M05 R09DS0034EJ0300 NESG2021M05 PU10188EJ02V0DS
Untitled Abstract: No abstract text available Text: Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications.	Original	PDF	NESG2021M05 R09DS0034EJ0300 NESG2021M05 NESG2021M05-T1
NESG2021M05 Abstract: NESG2021M05-T1 transistor s2p Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications	Original	PDF	NESG2021M05 PU10188EJ02V0DS NESG2021M05 NESG2021M05-T1 transistor s2p
NESG2021M05 Abstract: NESG2021M05-T1 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF	PU10188EJ02V0DS NESG2021M05 NESG2021M05 NESG2021M05-T1