PTF082002E Search Results

PTF082002E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTF082002E		Infineon Technologies	High Power RF LDMOS FET 200 W: 860-900 MHz		Original	PDF

PTF082002E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
infineon power fet Abstract: 45ACP PTF082002E Text: Developmental PTF 082002E High Power RF LDMOS FET 200 W, 860–900 MHz Description Features The PTF 082002E is a 200 W, internally matched GOLDMOS FET intended for CDMA applications in the 860-900 MHz bands. Full gold metallization ensures excellent device lifetime and reliability.	Original	082002E 082002E IS-95 infineon power fet 45ACP PTF082002E	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

infineon power fet

Abstract: 45ACP PTF082002E
Text: Developmental PTF 082002E High Power RF LDMOS FET 200 W, 860–900 MHz Description Features The PTF 082002E is a 200 W, internally matched GOLDMOS FET intended for CDMA applications in the 860-900 MHz bands. Full gold metallization ensures excellent device lifetime and reliability.

Original

082002E 082002E IS-95 infineon power fet 45ACP PTF082002E

PDF