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    PT6005

    Abstract: VSC300
    Text: V L S I TECHNOLOGY INC IflE D T3ÔÔ347 üüü32bfl 4 VLSI T ech n o lo gy, inc. VSC300 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL FEATURES • A dvanced 1-m icron draw n gate length , silicon gate C M O S , 2 -la ye r m etal technology • Fast design tu rn-around tim e w ith


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    PDF 32bfl VSC300 PT6005

    VGT300039

    Abstract: PT6045 VGT300022 PT6005
    Text: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


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    PDF T3flfl34? VGT350/VGT353 85-micron VGT350/353 VGT300039 PT6045 VGT300022 PT6005

    R/CHN 041 diode

    Abstract: No abstract text available
    Text: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency


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    PDF VGT300 R/CHN 041 diode

    PT6045

    Abstract: VSC370 PT6005
    Text: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


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    PDF VSC370 85-micron 000fiö T-42-41 PT6045 PT6005

    PT6042

    Abstract: PT6045 VSC350 PT6005 nd02d2
    Text: V L S I TECHNOLOGY INC 47 E D =1350347 0 0 0 0 0 3 0 VTI V L S I Technology , in c VSC350 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Fast design turn-around time with COMPASS Design Automation’s advanced design tools and methodology


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    PDF VSC350 85-micron T-42-41 PT6042 PT6045 PT6005 nd02d2