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    PT0218 Search Results

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    PT0218 Price and Stock

    Bourns Inc 4816P-T02-184

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    DigiKey 4816P-T02-184 Tube 2,000
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    Bourns Inc 4816P-T02-182

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    Bourns Inc 4816P-T02-181

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    Master Electronics 4816P-T02-181
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    Bourns Inc 4814P-T02-181

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    Master Electronics 4814P-T02-181
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    Bourns Inc 4816P-T02-183

    RES ARRAY 15 RES 18K OHM 16SOIC
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    DigiKey 4816P-T02-183 Tube 2,000
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    PT0218 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ102SL

    Abstract: E3045 Q67040-S4010-A2 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ
    Text: BUZ102SL Infineon te c h n o lo g ie } » m p f°v e d Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f l DS on 0.015 n 47 A t> V 55 • Logic Level


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    PDF 102SL BUZ102SL_ P-TQ220-3-1 Q67040-S4010-A2 BUZ102SL E3045A P-TQ263-3-2 Q67040-S4010-A6 E3045 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ

    A4t 29 smd

    Abstract: smd a4t
    Text: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 Vds f lDS on 200 V 9.5 A 0.4 n • Package Ordering Code TO-220 AB C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current


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    PDF O-220 C67078-S1310-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T A4t 29 smd smd a4t

    KT 117A

    Abstract: SMD CODE HBA
    Text: BSP 315P I nf ineon technologies Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel • Enhancement mode • Avalanche rated • Logic Level • dvldt rated Typ Package BSP 315 P SOT-223 Ordering Code Q67042-S4004 Marking


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    PDF OT-223 BSP315P Q67042-S4004 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T KT 117A SMD CODE HBA

    Untitled

    Abstract: No abstract text available
    Text: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current


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    PDF 08N05L P-T0252 Q67040-S4134 P-T0251 SPD08N05L SPU08N05L Q67040-S4182-A2 S35bQ5 Q133777 SQT-89

    Untitled

    Abstract: No abstract text available
    Text: BSS98 In fin e o n t*ehnoiogi*i SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type Vbs BSS98 50 V Type BSS98 BSS98 BSS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 0.3 A °DS(on) Package


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    PDF BSS98 Q62702-S053 Q62702-S517 Q62702-S635 E6288 E6296

    Untitled

    Abstract: No abstract text available
    Text: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6


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    PDF BSP318S OT-223 Q67000-S127 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    kd smd transistor

    Abstract: No abstract text available
    Text: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated


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    PDF 28N03L SPD28N03L Q67040-S4139-A2 P-T0252 P-T0251-3-1 Q67040-S4142-A2 SPU28N03L S35bG5 Q133777 SQT-89 kd smd transistor

    smd diode code b54

    Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
    Text: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current


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    PDF BUZ101S P-T0220-3-1 Q67040-S4013-A2 E3045A P-T0263-3-2 Q67040-S4013-A6 E3045 smd diode code b54 smd transistor c015 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA

    Untitled

    Abstract: No abstract text available
    Text: BUZ 73 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 73 200 V 7A 0.4 £2. TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    PDF O-220 C67078-S1317-A2 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    SMD Transistor t30

    Abstract: transistor SMD t30
    Text: SPP 30N03L Infineon technologie» SIPMOS Power Transistor Product Summary Features V 30 Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.018 n 30 A h • N channel • Logic Level


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    PDF 30N03L SPP30N03L P-T0220-3-1 Q67040-S4737-A2 P-T0263-3-2 Q67040-S4143-A3 SPB30N03L S35bQ5 Q133777 SQT-89 SMD Transistor t30 transistor SMD t30

    28N05L

    Abstract: No abstract text available
    Text: Infineon h te c imPr° n ol o g i Ive<& SPD 28N05L Hosion “ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage '/DS Drain-Source on-state resistance f l DS on) 0.026 Si A 28 t> • Enhancement mode Continuous drain current


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    PDF 28N05L SPD28N05L SPU28N05L Q67040-S4122 P-T0251 P-T0252 Q67040-S4114-A2 S35bG5 Q133777 SQT-89 28N05L

    Transistor SMD SM 942

    Abstract: No abstract text available
    Text: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30


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    PDF 30N03 67040-S 144-A -T0251-3-1 146-A S35bQ5 Q133777 SQT-89 B535bQ5 Transistor SMD SM 942

    Untitled

    Abstract: No abstract text available
    Text: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n


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    PDF 70N10L SPP70N10L SPB70N10L P-T0220-3-1 Q67040-S4175 P-T0263-3-2 Q67040-S4170 S35bQ5 Q133777 SQT-89

    Untitled

    Abstract: No abstract text available
    Text: BUZ 21L Infineo n t « c h n o l o g •es SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds % ^DS on Package Ordering Code BUZ21 L 100 V 21 A 0.085 ü TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter


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    PDF BUZ21 O-220 C67078-S1338-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: BSS 129 Infine on technologies SIPMOS Small-Signal Transistor • • • • • • • 240 V 0.15 A ^DSfon 20 O N channel Depletion mode High dynamic resistance Available grouped in VGs th> V DS 1D Type Pin C onfigu ration Marking Tape and Reel Information


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    PDF Q62702-S015 E6288 Q67000-S116 E6296: 235b05 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5

    Untitled

    Abstract: No abstract text available
    Text: BUZ 344 I nf ineon technologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type ^DS to flDS on Package Ordering Code BUZ 344 100 V 50 A 0.035 n TO-218AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    PDF O-218AA C67078-S3132-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current


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    PDF SIS0005Â Q67041-S4028 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: BSO 220N Infineon t«ehneiog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Dual N Channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 20 V ^fos on


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    PDF BS0220N Q67000-S4010 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã D13377T

    transistor Bts 240a

    Abstract: BTS 621 L1 BSP550 BTS308 bts610l1 5227-G 4224s2 POWER SUPPLY BTS SIEMENS BTS712 siemens scr
    Text: SIEMENS Selection Guide - Low Side Switches One Channel Low Side Switches TEMPFET Smart SI PMOS® Technology Features • Overload protection • Short circuit protection with external circuitry • Thermal shutdown • Status feedback (single) with external resistor at input


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    PDF P-T0220-3-1 P-T0220-3-45 O-220 E3045) P-T0218-3-1 P-T0220-5-3 O-218AA) P-T0220-5-43 transistor Bts 240a BTS 621 L1 BSP550 BTS308 bts610l1 5227-G 4224s2 POWER SUPPLY BTS SIEMENS BTS712 siemens scr

    30N03

    Abstract: marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SPB30N03 SPP30N03 SMD transistor 2x sot 23 smd code book B3
    Text: SPP 30N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance ^ D S o n • Avalanche rated Continuous drain current b V 30 0.023 a A 30 • dy/df rated


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    PDF SPP30N03 P-T0220-3-1 Q67040-S4736-A2 SPB30N03 P-T0263-3-2 Q67040-S4736-A3 VPT05I64 fiS35bG5 D133777 SQT-89 30N03 marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SMD transistor 2x sot 23 smd code book B3

    cc 3025 diode

    Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
    Text: In fin e o n BUZ 11 OS ! ^ e d Costoni * technologie* im P r° SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode Drain source voltage ^DS Drain-Source on-state resistance ñ DSÍon Continuous drain current • Avalanche rated


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    PDF BUZ110S BUZ110S P-T0220-3-1 Q67040-S4005-A2 E3045A P-TC263-3-2 Q67040-S4005-A6 E3045 cc 3025 diode 5T4 tube MC 140 transistor 8235 smd transistor h7 transistor smd marking CODE Wb transistor marking smd 7c

    smd transistor marking 7j

    Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
    Text: Infineon BUZ103S ,y e d Rosi0"' ’ technologie» im p f SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current


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    PDF BUZ103S BUZ103S P-T0220-3-1 Q67040-S4009-A2 E3045A P-T0263-3-2 Q67040-S4009-A6 E3045 smd transistor marking 7j TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s diode marking code MU marking 684 diode smD

    TRANSISTOR SMD MARKING CODE 7B 6 pin

    Abstract: SmD TRANSISTOR a74 TRANSISTOR SMD MARKING E0 smd transistor 718 smd transistor 2Q BUZ 1025 Aajs T55B H7 marking code smd BUZ110SL
    Text: BUZ 110SL Infineon t « c h n o I o g <e s SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS R DS on Id 55 V 0.01 a


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    PDF 110SL BUZ110SL P-T0220-3-1 Q67040-S4004-A2 E3045A P-T0263-3-2 Q67040-S4004-A6 E3045 TRANSISTOR SMD MARKING CODE 7B 6 pin SmD TRANSISTOR a74 TRANSISTOR SMD MARKING E0 smd transistor 718 smd transistor 2Q BUZ 1025 Aajs T55B H7 marking code smd

    Untitled

    Abstract: No abstract text available
    Text: Inf i ne on lm P , o v e d R — technologies ! s 5 SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ^ D S o n • Avalanche rated Continuous drain current b ^DS


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    PDF Q67040-S4121 SPD31N05 P-T0252 SPU31N05 Q67040-S4113-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã