PSWT 90 Search Results

PSWT 90

Abstract: pswt
Contextual Info: Thyristor Modules PSWT 90 PSYT 90 ITRMS = VRRM = 165 A 800 - 1600 V Preliminary Data Sheet V RSM V DSM 900 1300 1500 1700 Symbol V RRM V DRM 800 1200 1400 1600 Type PSWT 90/08 PSWT 90/12 PSWT 90/14 PSWT 90/16 Type PSYT 90/08 PSYT 90/12 PSYT 90/14 PSYT 90/16

PSWT 160

Contextual Info: Thyristor Modules PSWT 160 PSYT 160 ITRMS VRRM = 180 A = 800 - 1600 V Preliminary Data Sheet V RSM V DSM 900 1300 1500 1700 Symbol V RRM V DRM 800 1200 1400 1600 Type PSWT 160/08 PSWT 160/12 PSWT 160/14 PSWT 160/16 Type PSYT 160/08 PSYT 160/12 PSYT 160/14

PSWT 70

Contextual Info: Thyristor Modules PSWT 70 PSYT 70 ITRMS VRRM = 80 A = 800 - 1600 V Preliminary Data Sheet V RSM V DSM 900 1300 1500 1700 Symbol V RRM V DRM 800 1200 1400 1600 Type PSWT 70/08 PSWT 70/12 PSWT 70/14 PSWT 70/16 Type PSYT 70/08 PSYT 70/12 PSYT 70/14 PSYT 70/16

je13003

Abstract: je13003 TRANSISTOR JE13002 transistor JE13003 transistor JE 1090 mje1300 MJE13003 motorola mje13 MJE-13003 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13002* MJE13003* D esigner's Data Sheet •Motoroi» PraMrrad Unie* SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high-voltage, high-speed power switching

pnp 222A

Abstract: JE5850 an222a mje5851 transistor W01 transistor JE5851 JE-15028 JE-1502 je15028
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE5850 M JE5851* M JE5Ö52* D esigner’s Data Sheet SW ITCHM ODE S e rie s PNP Silico n Pow er T ran sisto rs 8 AMPERE PNP SILICON POWER TRANSISTORS 300,350,400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-volt­

MJ-13330

Abstract: J133 transistor 1n403 LC 3492 MJ13331 mj13330
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J13333 Designer's Data Sheet SW IT C H M O D E Series N PN Silicon Power Transistor 20 AMPERE NPN SILICON POW ER TRANSISTORS 4 0 0-50 0 VOLTS 175 WATTS The MJ13333 transistor Is designed for high voltage, high-speed, power switching

MJE13009

Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications

transistor mj10005

Abstract: 440 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J10005* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode "Motorola Pr*f*rr*d D«vic« 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS

SUS CIRCUIT

Abstract: MJ13333 mj1333 pswt an222
Contextual Info: 1165908 SwitchmodeTM series NPN silicon power transistor. The MJ13333 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated SWITCHMODE applications.

mj10000

Abstract: MJ10001
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The M J10000 Darlington transistor is designed for high-voltage, high-speed,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications

ferroxcube E 40 core

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-R NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

MJ10009

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA M J 10009* D esigner’s Data Sheet SW ITCHMODE Series NPN Silico n Power Darlington TVansistor with B ase-Em itter Speedup Diode 20 AM PERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor Is designed for high-voltage, high-speed,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

2n2222 transistor pin b c e

Abstract: DATA SHEET OF transistor 2N2222 to-92 transistor mje13003 equivalent mje13003 MJE13003 transistor OF transistor 2N2222 to-92 2n2222 to-92 mje13003 equivalent MJE13003 mje13003l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.

MJE1300S

Abstract: JE13005
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13005* Designer’s Data Sheet ‘Motorola Pr»f*rr*d Dcvie« SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

JD13003

Contextual Info: MOTOROLA SC XSTRS/R F 1 2 E D I b 3 b 7 2 5 4 G G ô S 2 tn 1 | T-33-Ö7 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MJD13003 Designer's Data Sheet High V o lta g e S w itc h m o d e S e rie s D PA K For Surface Mount A pplications This device is designed for high-voltage, high-speed power switching inductive circuits

mj power transistor speedup diode

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage,

MJE13003

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

transistor mje13003

Abstract: MJE13003 TO-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

transistor 3405 motorola

Abstract: bux48a equivalent bux48 equivalent transistor 3405 npn
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850-1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed (or high-voltage, high-speed,

MJ10007

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007’ Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode •Motorola Pr«f*rr«d Otvlet 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch