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    MJ100 Price and Stock

    Central Semiconductor Corp CMJ1000-TR-PBFREE

    DIODE CUR REG 100V 1.32MA 500MW
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    DigiKey CMJ1000-TR-PBFREE Digi-Reel 14,434 1
    • 1 $6.96
    • 10 $4.698
    • 100 $6.96
    • 1000 $2.85
    • 10000 $2.85
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    CMJ1000-TR-PBFREE Cut Tape 14,434 1
    • 1 $6.96
    • 10 $4.698
    • 100 $6.96
    • 1000 $2.85
    • 10000 $2.85
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    CMJ1000-TR-PBFREE Reel 12,000 3,000
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    • 10000 $2.85
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    Central Semiconductor Corp CMJ1000-TR

    DIODE CUR REG 100V 1.32MA 500MW
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    DigiKey CMJ1000-TR Reel
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    Carling Technologies VVGRCMJ-100

    HARDWARE SWITCH ROCKER
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    DigiKey VVGRCMJ-100 Bulk 100
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    • 100 $2.7085
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    Mouser Electronics VVGRCMJ-100
    • 1 $4.82
    • 10 $4.31
    • 100 $3.74
    • 1000 $3.12
    • 10000 $3.06
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    Master Electronics VVGRCMJ-100
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    • 10 $3.97
    • 100 $2.33
    • 1000 $1.42
    • 10000 $1.25
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    Carling Technologies VVG8CMJ-100

    HARDWARE SWITCH ROCKER
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    DigiKey VVG8CMJ-100 Bulk 100
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    • 100 $2.7085
    • 1000 $2.7085
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    Mouser Electronics VVG8CMJ-100
    • 1 $4.82
    • 10 $4.31
    • 100 $3.74
    • 1000 $3.12
    • 10000 $3.06
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    Carling Technologies VVA9BMJ-100

    HARDWARE SWITCH ROCKER
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    DigiKey VVA9BMJ-100 Bulk 100
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    • 100 $2.8806
    • 1000 $2.8806
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    Mouser Electronics VVA9BMJ-100
    • 1 $5.19
    • 10 $4.62
    • 100 $4.02
    • 1000 $3.32
    • 10000 $3.32
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    MJ100 Datasheets (401)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ1000 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    MJ1000 Comset Semiconductors COMPLEMENTARY POWER DARLINGTON Original PDF
    MJ1000 Motorola MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Original PDF
    MJ1000 Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan PDF
    MJ1000 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    MJ1000 Motorola The European Selection Data Book 1976 Scan PDF
    MJ1000 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ1000 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ1000 Motorola European Master Selection Guide 1986 Scan PDF
    MJ1000 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ1000 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ1000 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ1000 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ1000 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJ1000 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJ1000 Unknown Transistor Replacements Scan PDF
    MJ1000 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ1000 Unknown Cross Reference Datasheet Scan PDF
    MJ1000 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    MJ10000 Motorola 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS Original PDF
    ...

    MJ100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 400V 4A

    Abstract: vce 500v NPN Transistor MJ10007
    Text: NPN MJ10007 SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


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    PDF MJ10007 diode 400V 4A vce 500v NPN Transistor MJ10007

    MJ10023

    Abstract: application MJ10023 npn 20A power Diode 20A DARLINGTON 20A transistor IC 12A
    Text: MJ10023 Silicon NPN Power Darlington Transistor GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. TO-3 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf


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    PDF MJ10023 16KHz 100mA 16KHz MJ10023 application MJ10023 npn 20A power Diode 20A DARLINGTON 20A transistor IC 12A

    MJ10009

    Abstract: 1N4937 2N3762 MTP3055E
    Text: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,


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    PDF MJ10009 MJ10009 r14525 MJ10009/D 1N4937 2N3762 MTP3055E

    MJ10000

    Abstract: No abstract text available
    Text: NPN MJ10000 SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


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    PDF MJ10000 MJ10000

    Untitled

    Abstract: No abstract text available
    Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 MJ10005 FAX: (973) 376-8960 SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode 20 AMPERE NPN SILICON POWER DARLINGTON


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    PDF MJ10005 250Vdc,

    Untitled

    Abstract: No abstract text available
    Text: tSstni-Conauctoi Lpi , L/nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10041 MJ10044 MJ10047 26,50, and 100 AMPERE - NPN SILICON POWER DARLINGTON TRANSISTOR 25 kVA ENERGY MANAGEMENT SERIES


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    PDF MJ10041 MJ10044 MJ10047 MJ10M1

    transistor mtp3055e

    Abstract: 1N4937 2N3762 MJ10009 MTP3055E mtp3055
    Text: MOTOROLA Order this document by MJ10009/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ10009*  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON


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    PDF MJ10009/D* MJ10009/D transistor mtp3055e 1N4937 2N3762 MJ10009 MTP3055E mtp3055

    application MJ10023

    Abstract: BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,


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    PDF MJ10022 MJ10023 MJ10023 Performanc32 TIP73B TIP74 TIP74A TIP74B TIP75 application MJ10023 BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56

    MJH11021 equivalent

    Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)


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    PDF MJH10012 MJ10012) MJH11018, MJH11020, MJH11022, MJH11017* MJH11019* MJH11021* MJH11018* MJH11020* MJH11021 equivalent BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159

    MJ10016

    Abstract: MJ10015 1N4937
    Text: ON Semiconductort MJ10015 MJ10016 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for


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    PDF MJ10015 MJ10016 MJ10015 MJ10016 r14525 MJ10015/D 1N4937

    222A

    Abstract: 1N4937 MJ10023 mj1002
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10023 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated switchmode


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    PDF MJ10023 r14525 MJ10023/D 222A 1N4937 mj1002

    npn darlington 400v 10a

    Abstract: npn darlington 6A 400V MJ10012 400V to 6V DC Regulator Darlington Transistors MJ-10012
    Text: Inchange Semiconductor Product Specification MJ10012 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage,high current ・DARLINGTON APPLICATIONS ・Automotive ignition ・Switching regulator ・Motor control applications PINNING


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    PDF MJ10012 npn darlington 400v 10a npn darlington 6A 400V MJ10012 400V to 6V DC Regulator Darlington Transistors MJ-10012

    Untitled

    Abstract: No abstract text available
    Text: l c/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MJ10042 MJ10045 MJ10048 25, GO, and 100 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 25 KVA ENERGY MANAGEMENT SERIES SWITCHMODE DARLINGTON TRANSISTORS


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    PDF MJ10042 MJ10045 MJ10048

    MJ-10000

    Abstract: No abstract text available
    Text: ^E.mi-Condu<itoi ^Pioduch, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON


    Original
    PDF MJ10000 MJ10000 MJ-10000

    MJ10020

    Abstract: MJ10021 mj1002
    Text: Æ&m o s p e c SWITCH MODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10020 The MJ10020 and MJ10021 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


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    PDF MJ10020 MJ10021 MJ10021 MJ10020 mj1002

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


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    PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015

    MJ10014

    Abstract: MJ10013 MJ-10013
    Text: Ü&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN MJ10013 MJ10014 The MJ10013 and MJ10014 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


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    PDF MJ10013 MJ10014 MJ10014 MJ10013 -VCC-250Vâ MJ-10013

    MJ10006

    Abstract: MJ10007 umi 150 5A 250V 5 amp npn darlington power transistors MJ-10006 MJ-10007
    Text: ÆàMOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10006 MJ10007 The MJ10006 and MJ10007 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


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    PDF MJ10006 MJ10007 450be umi 150 5A 250V 5 amp npn darlington power transistors MJ-10006 MJ-10007

    MJ10016HX

    Abstract: No abstract text available
    Text: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall


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    PDF b3b72S4 MJ10016HX, MJ10016HX

    MJ10002

    Abstract: MJ10003
    Text: S W ITC H M O D E SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN MJ10002 MJ10003 The MJ10002 and MJ10003 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


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    PDF MJ10002 MJ10003 MJ10003 f5V-Vcc-250

    kt 1118

    Abstract: MJ10000 MJ10001
    Text: SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS The MJ10000 and MJ10001 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


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    PDF MJ10000 MJ10001 MJ10000 kt 1118

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J10023 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS


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    PDF MJ10023/D J10023 97A-05 O-204AE

    DIODE 40c 0649

    Abstract: MJ100B3D45
    Text: M O T O R O L A SC SbE D XSTRS/R F O rder th is data sheet by MJ100B3D45/D b 3 b 7 E S 4 QD^lEflt. D MOTOROLA SEMICONDUCTOR TECHNICAL DATA m € NPN Silicon Power Transistor Module Energy M anagem ent Series DUAL DARLINGTON POWER TRANSISTOR 100 AMPERES 450 VOLTS


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    PDF MJ100B3D45/D 14A-02 14A-02 MJ100B3D45 CM694 DIODE 40c 0649 MJ100B3D45

    60 amp npn darlington power transistors

    Abstract: RB650
    Text: SOLID STATE INC. 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10022 The MJ10022 and MJ10023 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits


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    PDF MJ10022 MJ10023 MJ10023 MJ10022 60 amp npn darlington power transistors RB650