PSEUDOSTATIC RAM Search Results

PSEU

Contextual Info: A WM0 G1 21 DO 8192 x 8-BIT PSEUDOSTATIC RAM • JEDED JC-42 Standard Pinout ■ Synchronous and Asynchronous Versions ■ Single-Step Capability ■ Fully Integrated On-Chip Refresh ■ Two-Line Data Bus Control ■ On-Chip Signal Arbitration ■ Single +5V ±1 0 % Supply

MK4816-5

Abstract: MK3880 MK4816-3 LCSC 24 MK4116 MK4816-4 MK4816 ram
Contextual Info: MOSTEK FElDJEDMâEl 2K x 8-BIT PSEUDOSTATIC RAM M K 4 8 1 6 N /J -3 /4 /5 FEATURES □ O n-chip substrate bias generator □ Organized as 2048 x 8 bits Part Num ber Access Time Cycle Time M K 48 16-3 200nsec 430nsec □ Low power - 1 50m W active 25 m W standby

TX49xx

Abstract: toshiba psram R4000A MPC8260UM TC51WHMxxxxxxx toshiba memory "part numbers" TX49 MPC8260 TC51WHM516AXBN TX4955
Contextual Info: Interfacing Toshiba Pseudo-Static RAM with Toshiba MIPS RISC and Motorola PowerPCTM Processors: Including a performance comparison between Toshiba Pseudo-Static RAM and Low-Power SRAM System Solutions from Toshiba America Electronic Components, Inc. Systems Application Engineering SAE

64k Static RAM

Abstract: 32-PIN LH5P860 5P860-1
Contextual Info: LH5P860 CMOS 512K 64K x 8 Pseudo-Static RAM FEATURES DESCRIPTION • 65,536 × 8 bit organization • Cycle time: 140 ns (MIN.) The LH5P860 is a 512K-bit Pseudo-Static RAM organized as 65,536 × 8 bits. It is fabricated using silicon-gate CMOS process technology. With its built-in

CMOS 512K RAM

Abstract: SRAM 512K BIT SOP32 32-PIN LH5PV8512
Contextual Info: LH5PV8512 CMOS 4M 512K x 8 Pseudo-Static RAM FEATURES DESCRIPTION • 524,288 words × 8 bit organization The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word × 8 bit organization. It is fabricated using silicon-gate CMOS process technology.

1M STATIC RAM "32 PIN"

Abstract: transistor A16 32-PIN LH5P8129 LH5P8129-60 LH5P8129-80
Contextual Info: CMOS 1M 128K x 8 CS-Control Pseudo-Static RAM LH5P8129 FEATURES • 131,072 × 8 bit organization PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Access times (MAX.): 60/80/100 ns RFSH 1 32 • Cycle times (MIN.): 100/130/160 ns VCC A16 2 31 A15 • Single +5 V power supply

64k Static RAM

Abstract: 32-PIN LH5P864
Contextual Info: LH5P864 FEATURES • 65,536 x 8 bit organization CMOS 512K 64K × 8 Pseudo-Static RAM PIN CONNECTIONS TOP VIEW 32-PIN SOP • Access time: 80 ns (MAX.) • Cycle time: 140 ns (MIN.) • Single +5 V power supply • Power consumption: Operating: 440 mW (MAX.)

Contextual Info: LH5P8128 FEATURES • 131,072 x 8 bit organization • Access times MAX. : 60/80/100 ns CMOS 1 M (128K x 8) Pseudo-Static RAM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Cycle times (MIN.): 100/130/160 ns RFSH □ • Single +5 V power supply • Compatible with standard 1 M

SP612B-7

Contextual Info: LH5P8128 CMOS 1M 128K X 8 Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8128 is a 1M bit Pseudo Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (MAX.): 60/80/100 ns

32DIP datasheet

Abstract: 32-PIN LH5P8128 LH5P8128-10 LH5P8128-60 LH5P8128-80 sop-12 package
Contextual Info: LH5P8128 FEATURES • 131,072 x 8 bit organization • Access times MAX. : 60/80/100 ns CMOS 1M (128K × 8) Pseudo-Static RAM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP • Cycle times (MIN.): 100/130/160 ns TOP VIEW RFSH 1 32 • Single +5 V power supply A16

Contextual Info: CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words x 16 bit organization The LH 5P V 1 6 2 5 6 isa 4 M bit Pseudo-Static RAM with a 262,144 words x 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)

LH5P1632

Abstract: 2650 cpu
Contextual Info: LH5P1632 CMOS 512K 32K x 16 Pseudo-Static RAM FEATURES • 32,768 × 16 bit organization • Access time: 80/150 ns (MAX.) • Cycle time: 140/210 ns (MIN.) • Single +5 V power supply PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW GND 1 40 VCC A9 2 39

Contextual Info: LH5P864 FEATURES • 65,536 x C M O S 512K 64K x 8 Pseudo-Static RAM DESCRIPTION 8 bit organization • Access time: 80 ns (MAX.) • Cycle time: 140 ns (MIN.) • Power supply: 5 V ± 10% • Power consumption: 440 mW (MAX.) • Operating temperature: 0 to 70°C

Contextual Info: LH5P864 FEATURES • 65 ,5 3 6 x 8 bit organization • Access time: 80 ns M AX. • Cycle time: 140 ns (M IN .) CMOS 512K (64K x 8) Pseudo-Static RAM DESCRIPTION The LH5P862 is a 512K-bit Pseudo-Static RAM or­ ganized as 65,536 x 8 bits. It is fabricated using silicon-gate CM O S process technology. W ith its built-in

Contextual Info: PRELIMINARY LH5P8129 DESCRIPTION FEATURES • 131,072 • Access times MAX. : 60/80/100 ns • Cycle times (MIN.): 100/130/160 ns • CMOS 1M (128K X 8) CS-Control Pseudo-Static RAM x 8 bit organization Power consumption: Operating: 572/440/358 mW (MAX.)

Contextual Info: LH5P8129 CMOS 1M 128K x 8 CS-Control Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8129 is a 1M bit Pseudo-Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (MAX.): 60/80/100 ns

Contextual Info: LH5P8512 FEATURES PRELIMINARY CM OS 4M 512K x 8 Pseudo-Static RAM • • 5 24,28 8 x 8 bit organization • Access time: 60 /7 0 /8 0 ns (M AX.) • Cycle time: 110/130/150 ns (M IN .) • Power supply: Compatible with JE D E C standard 4M SRAM pinout •

8602 gn

Contextual Info: LH5P860 CMOS 512K 64K x 8 Pseudo-Static RAM FEATURES DESCRIPTION • 65,536 x 8 bit organization The LH5P860 is a 512K-bit Pseudo-Static RAM or­ ganized as 65,536 x 8 bits. It is fabricated using silicon-gate CMOS process technology. With its built-in oscillator, it is easy to refresh memories without an

sp8512

Contextual Info: PRELIMINARY L H 5 P 8 5 1 2 FEATURES • 5 2 4 ,2 8 8 x 8 bit organization • Access time: 6 0 /7 0 /8 0 ns M AX. • Cycle time: 110/130/150 ns (M IN .) • Power supply: CMOS 4M (512K • x 8) Pseudo-Static RAM Compatible with J E D E C standard 4M SRA M pinout

Contextual Info: LH5P864 FEATURES • 65,536 x CMOS 512K 64K x 8 Pseudo-Static RAM PIN CONNECTIONS 8 bit organization 32-PIN SOP TOP VIEW • Access time: 80 ns (MAX.) • Power consumption: Operating: 440 mW (MAX.) Standby (TTL level): 22 mW (MAX.) Standby (CMOS level): 2.75 mW (MAX.)

Pseudostatic RAM

Contextual Info: LH5P8128 CMOS 1M 128K X 8 Pseudo-Static RAM FEATURES PIN CONNECTIONS • 131,072 x 8 bit organization • Access times (MAX.): 60/80/100 ns 32-PIN DIP 32-PIN SOP TOP VIEW f • Cycle times (MIN.): 100/130/160 ns RFSH E • Single +5 V power supply • Power consumption:

Contextual Info: CMOS 4M 512K x 8 Pseudo-Static RAM FEATURES DESCRIPTION • 524,288 words x 8 bit organization The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word x 8 bit organization. It is fabricated using silicon-gate CMOS process technology. • CE access time (tcEA)• 120 ns (MAX.)

Contextual Info: LH5P8129 FEATURES • 131,072 x 8 bit organization CMOS 1 M 128K x 8 CS-Control Pseudo-Static RAM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TO P V IE W • Access times (MAX.): 60/80/100 ns • Cycle times (MIN.): 100/130/160 ns A l6 A i4 • Single +5 V power supply

44-PIN

Abstract: LH5PV16256
Contextual Info: LH5PV16256 CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words × 16 bit organization The LH5PV16256 is a 4M bit Pseudo-Static RAM with a 262,144 words × 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)