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    LH5P860 Search Results

    LH5P860 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH5P860 Sharp CMOS 512K (64K x 8) Pseudo-Static RAM Original PDF
    LH5P860D-80 Sharp CMOS 512K(64K x 8) pseudo-static RAM Original PDF
    LH5P860N-80 Sharp CMOS 512K(64K x 8) pseudo-static RAM Original PDF

    LH5P860 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    64k Static RAM

    Abstract: 32-PIN LH5P860 5P860-1
    Text: LH5P860 CMOS 512K 64K x 8 Pseudo-Static RAM FEATURES DESCRIPTION • 65,536 × 8 bit organization • Cycle time: 140 ns (MIN.) The LH5P860 is a 512K-bit Pseudo-Static RAM organized as 65,536 × 8 bits. It is fabricated using silicon-gate CMOS process technology. With its built-in


    Original
    PDF LH5P860 LH5P860 512K-bit 32-pin, 600-mil 32SOP 525-mil 64k Static RAM 32-PIN 5P860-1

    80N80

    Abstract: ENS-60
    Text: MEMORIES Pseudo Static RAMs ★ Under developm ent C apacity C onfiguration Model No. A ccess tim e ns 60 LH5P860 70 80 100 120 150 - 64k x 8 LH5PB64 512k Pseudo Static RAM 32kx 16 LH5P1632 LH5P8128 1M 126kx8 LH5P8129 Low voltage operation 4M ★LH5PV8512


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    PDF LH5P860 LH5PB64 LH5P1632 LH5P8128 126kx8 LH5P8129 LH5PV8512 LH5P832/D/N-10 28SK-DIP/ 28SOP 80N80 ENS-60

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES Pseudo Static RAMs w B it co n fig u ra tio n C apacity Model No. A cce ss tim e n s 60 - 256k x8 70 80 100 120 150 LH5P832 LH5P860 x8 LH5P864 512k LH5P1632 x 16 LH5P8128 1M Pseudo Static RAM x8 LH5P8129 x8 LH5PV8512 x 16 LH5PV16256 x 16 LH6P82


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    PDF LH5P832 LH5P860 LH5P864 LH5P1632 LH5P8128 LH5P8129 LH5PV8512 LH5PV16256 LH6P82 LH5P832/D/N-10

    8602 gn

    Abstract: No abstract text available
    Text: LH5P860 CMOS 512K 64K x 8 Pseudo-Static RAM FEATURES DESCRIPTION • 65,536 x 8 bit organization The LH5P860 is a 512K-bit Pseudo-Static RAM or­ ganized as 65,536 x 8 bits. It is fabricated using silicon-gate CMOS process technology. With its built-in oscillator, it is easy to refresh memories without an


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    PDF LH5P860 32-pin, 600-mil 525-mil LH5P860 512K-bit 8602 gn

    256k x 4

    Abstract: No abstract text available
    Text: MEMORIES ★Under development Capacity Configuration Model No. Access time ns 60 256k 32k x 8 70 Package SK BO 100 120 150 DIP SOP TSOP DIP LH5P832 — 28 28 LH5P860 n 28 32 64k x 8 LH5P864 — 32 512k Pseudo static RAM 32k x 16 LH5P1632 I- — 40 40 LH5P8128


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    PDF LH5P832 LH5P860 LH5P864 LH5P1632 LH5P8128 LH5P8129 LH5P8512 LH21256 LH64256B 256k x 4

    LH64256BK70

    Abstract: Lh64256bk-70
    Text: MEMORIES ★Under development • Pseudo S tatic RAMs Gipäfifty rüm ^H M o n Modal No. worfexblta t LH5P832/D/N-10 256k Supply.currant AOOMtttM# Cyetotime operating/standby (na)MAX. (na) MIN. 100 160 (mA) MAX. Supply voltage M Control signal« 65/3 32k x 8


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    PDF LH5P832/D/N-10 28DIP/ 28SK-DIP/ 28SOP 32DIP/32SOP 32SOP 40DIP/40SOP LH5P832/D/N-12 LH5P860/N-80 LH5P864N-80 LH64256BK70 Lh64256bk-70

    LH61664AK-50

    Abstract: LH61665AK lh61665 LH5PV8512 16256S
    Text: PSEUDO SRAM/DYNAMIC RAM • PSEUDO SRAMs ♦ Features • Random access memory with ease of use equivalent to SRAM. Supply current MAX. C apacity Bit C onfiguration 256k x 8 Model No. LH 5P 832/D /N -10/12 Access time ns MAX. Cycle time (ns) MIN. O perating


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    PDF LH5P864N 5P1632/N-80/15 32SOP DIP/40SOP 32DIP/32SOP/32TSOP 32TSOP DIP/32SOP/32TSOP( /32TS 44TSO LH61664AK-50 LH61665AK lh61665 LH5PV8512 16256S

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


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    PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    Untitled

    Abstract: No abstract text available
    Text: • L ■. .n o r i> o u CMOS 512K 64K x 8 Pseudo-Static RAM FEATURES DESCRIPTION • 65,536 x 8 bit oiganization The LH5F06O is a 512K-bit Pseudo-Static RAM or­ ganized as 65,536 x 8 bits. It is fabricated using sNicorv-gate CMOS process technology* With its built-in


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    PDF LH5F06O 512K-bit 0X166] 32-pin, 526-m LH5P860 32-oin. 600-mil DtP032-P-600)

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


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    PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


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    PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


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    PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    IR2E01

    Abstract: LR4087 LZ8420M LZ9GG13 LI3160 IR2C36 LZ2423A SM8205 LZ9GG13M LR39901
    Text: Index Model No. A R M 7 D C PU C o re B i-C M O S 1 28 4 0 ,4 2 C 62 IR 3 Y 1 2 A 50 LH1532 49 LH 531V 00 2.4 IR 2 E 2 8 62 IR 3 Y 1 4 50 LH1536 49 LH 532000B 3,4 IR 2 E 2 9 62 IR 3 Y 1 5 50 LH 1540A 49 L H 5 3 2 00 0 B -1 3,4 IR 2 E 3 0 62 IR 3 Y 1 6 50


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    PDF IR3Y21 LH1532 LH1536 LH1548 LH1549 LH1555 LH1556 LH1559 LH1560 LH1562 IR2E01 LR4087 LZ8420M LZ9GG13 LI3160 IR2C36 LZ2423A SM8205 LZ9GG13M LR39901

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES SST/^-SS*!WW9!»a«i;!!WWS«»i ★ C apacity C onfiguration M odel No. 32k x 8 Under development A cce ss tim e n s 60 70 80 100 120 150 5 832 -i LH P -j LH P -j LH P -j LH P -j LH P H LH P 5 860 64k x 8 5 864 512k 3 2 k x 16 5 8128 128k x 8 1M


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    PDF 4QDIP/40SOP 32TSOP 32TSOHit 44TSOP