PREDICTING SOLDER Search Results

AN1793

Abstract: coin cell battery APP1793 BR1225 BR1632 BR2330 BR3032 Electrolyte Evaporation
Contextual Info: Maxim > App Notes > BATTERY MANAGEMENT Keywords: Lithium Coin-Cell Batteries: Predicting An Application Lifetime Dec 03, 2002 APPLICATION NOTE 1793 Lithium Coin-Cell Batteries: Predicting An Application Lifetime Maxim builds a large number of products that incorporate lithium coin-cell batteries to provide nonvolatile NV

ze 003 driver

Abstract: ze 003 Excel formula erg inc 1962 heat and mass transfer
Contextual Info: AND8222/D Predicting the Effect of Circuit Boards on Semiconductor Package Thermal Performance http://onsemi.com Prepared by: Roger Paul Stout, PE ON Semiconductor APPLICATION NOTE Abstract In some situations, a circuit board may be approximated by varying regions of roughly axisymmetric geometry, and a

Predicting-Operating-Temperature-and-Expected-Lifetime

Abstract: Predicting Operating Temperature and Expected Lifetime PCIM 177 variable capacitor C4AK powersystems simulation model electrolytic capacitor capacitor variable dw-dc variable capacitors
Contextual Info: Predicting Operating Temperature and Expected Lifetime of Aluminum-Electrolytic Bus Capacitors with Thermal Modeling Sam G. Parler, Jr. and Laird L. Macomber Cornell Dubilier 140 Technology Place Liberty, SC 29657 Abstract ! Large-can aluminum electrolytic capacitors are widely used as bus capacitors in variable-speed

Lithium Cell Battery Holder

Abstract: 12AH-1 Electrolyte Evaporation Leg br30 BR1632 battery controller 3000 battery holder am batteries panasonic Electrolyte Evaporation BR2330
Contextual Info: Lithium coin-cell batteries: predicting an application lifetime IC current demands If an IC SRAM or RTC is going to be ba ttery powered, there needs to be a match between the current demands of the IC, the expected lifetime, and the energy available in the battery. If the IC and battery are being purchased,

DS1216

Abstract: Electrolyte Evaporation Leg DS1340 battery controller 12AH-1 DS1682 rtc ds1307 BR1225 Electrolyte Evaporation BR2330
Contextual Info: Maxim > App Notes > MEMORY REAL-TIME CLOCKS TIME AND TEMPERATURE RECORDERS Keywords: lithium, battery, batteries, coin-cell, battery life, battery back up Mar 27, 2002 APPLICATION NOTE 505 Lithium Coin-Cell Batteries: Predicting an Application Lifetime Abstract: This application note discusses various contributors to battery capacity consumption in a batterybacked application, and how to predict battery lifetime in a system. A designer should be able to use this

predicting

Contextual Info: Introduction Quality assurance and reliability We put quality first. Quality here refers both to the integrity of the products that we manufacture and the price and timely delivery of those products to our customers. Although we put the utmost effort into each

LT 1.2 volt precision rectifier

Abstract: s243v
Contextual Info: Quality Assurance and Reliability Diodes Quality Assurance and Reliability •Quality assurance activities •ROHM product quality We put quality first. "Quality" here refers to both the integ­ rity of the products that we manufacture and the price and timely delivery of those products to our customers. Al­

Schottky Barrier Diodes

Abstract: Switching Diodes DIODE 19 9 Rohm Diodes Rohm Schottky Barrier Diodes
Contextual Info: Contents Contents Page Introduction 9 Switching diodes summary 10 Band switching diodes summary 12 Rectifying diodes summary 13 Schottky barrier diodes summary 14 Variable capacitance diode summary 15 Zener diodes summary 15 Diode array summary 16 Quality assurance and reliability 19

Strain gage report

Abstract: with or without underfill flip SMT Texas "Strain Gage" ENIG strain rate texas instruments automotive flip chip underfill Texas alternative ENIG
Contextual Info: Application Report SPRAA55 - August 2004 Use and Handling of Semiconductor Packages with ENIG Pad Finishes Eddie Moltz DSP Packaging ABSTRACT Electroless Nickel/Immersion Gold plating, or ENIG, is a versatile process and enables fabrication of high-density flip chip BGA substrates needed for high-performance IC chips.

application note jfet J111 transistor

Abstract: BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112
Contextual Info: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

j112

Abstract: j112g J111
Contextual Info: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

MMBF4391

Abstract: MMBF4391LT1 MMBF4392 MMBF4392LT1 MMBF4393 MMBF4393LT1
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc Forward Gate Current

J112 jfet

Abstract: J112G J113 equivalent datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet marking j112 j112 fet transistor J112 J112
Contextual Info: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

BSR58LT1

Contextual Info: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50

marking 6k sot-23 package

Abstract: MMBF4391 MMBF4391LT1 MMBF4391LT1G MMBF4392 MMBF4392LT1 MMBF4392LT1G MMBF4393LT1 MMBF4393LT1G SOT-23 6K
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG

MMBF4391

Abstract: MMBF4391LT1 MMBF4391LT1G MMBF4392 MMBF4392LT1 MMBF4393 MMBF4393LT1 MMBF4393LT1G
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG

m6g transistors marking code

Abstract: m6g marking code m6g marking sot23 SMMBF4391LT1G marking 6j M6G sot 23 marking code m6g m6g sot23 marking m6g MMBF4393
Contextual Info: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel 3 Features 1 • S Prefix for Automotive and Other Applications Requiring Unique • 2 Site and Control Change Requirements; AEC−Q101 Qualified and

marking code m6g

Abstract: m6g transistors marking code M6G sot 23 m6g marking code M6G MARKING MMBF4391 MMBF4391LT1 MMBF4391LT1G MMBF4392 MMBF4392LT1
Contextual Info: MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage

MPF4392

Abstract: MPF4392G MPF4393 MPF4393G MPF4393RLRP MPF4393RLRPG
Contextual Info: MPF4392, MPF4393 Preferred Devices JFET Switching Transistors N−Channel − Depletion Features • Pb−Free Packages are Available* http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 30 Vdc Drain −Gate Voltag

Contextual Info: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel 3 Features 1 • S Prefix for Automotive and Other Applications Requiring Unique • 2 Site and Control Change Requirements; AEC−Q101 Qualified and

MMBF4393LT1G

Abstract: MMBF4391 MMBF4392 RK 69 MMBF4391LT1 MMBF4391LT1G MMBF4392LT1 MMBF4392LT1G MMBF4393LT1
Contextual Info: MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage

m6g marking code

Abstract: m6g transistors marking code m6g marking sot23
Contextual Info: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  SOT−23 CASE 318 STYLE 10

welwyn FA83

Contextual Info: Fusible Metal Film Resistors FA8025 SERIES ● Predictable fusing characteristics ● Flameproof protection Electrical Data Power rating at 70°C Resistance range Limiting element voltage TCR Resistance tolerance Standard values Thermal impedance Ambient temperature range

FA8225

Abstract: FA8325 FA8425 FA83 welwyn FA83 FA8025 FA84
Contextual Info: Fusible Metal Film Resistors Welwyn Components FA8025 series • Predictable fusing characteristics • Flameproof protection Electrical Data FA8225 FA8325 Power rating at 70˚ C watts 0.25 0.5 1.5 Resistance range ohms 0R1 - 10k 0R1 - 27k 0R15 - 22k Limiting element voltage