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    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y 5 1 4 1 7 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The HY514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


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    PDF 256KX 16-bit HY514170B 400mil 40pin 40/44pin 1AC21-00-MAY94 PQS702