PQFN08B Search Results

LFPAK footprint

Abstract: PowerPAK 1212-8 stencil LFPAK footprint Renesas PSMN8R2-80YS POWERPAK SO8 LFPAK56 DFN 3.3X3.3 PSMN7R0-30MLC PSMN012-60YS SOT223 nxp
Contextual Info: Ultra-reliable LFPAK56 and LFPAK33 Tougher just got smaller NXP’s LFPAK – Designed for reliability Designing a complex automotive system, a high efficiency industrial power supply or a slimline portable PC ? NXP has a range of smaller, faster, cooler MOSFETs to help you deliver maximum reliability.

Contextual Info: FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description „ Max rDS on = 3.15 mΩ at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and

Contextual Info: FDMC8588 N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 mΩ Features General Description ̈ Max rDS on = 5.7 mΩ at VGS = 4.5 V, ID = 16.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

Contextual Info: FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description ̈ Max rDS on = 3.15 mΩ at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and

MO-240

Abstract: PQFN08B
Contextual Info: FDMC8588 N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 mΩ Features General Description „ Max rDS on = 5.7 mΩ at VGS = 4.5 V, ID = 16.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node