LFPAK footprint
Abstract: PowerPAK 1212-8 stencil LFPAK footprint Renesas PSMN8R2-80YS POWERPAK SO8 LFPAK56 DFN 3.3X3.3 PSMN7R0-30MLC PSMN012-60YS SOT223 nxp
Text: Ultra-reliable LFPAK56 and LFPAK33 Tougher just got smaller NXP’s LFPAK – Designed for reliability Designing a complex automotive system, a high efficiency industrial power supply or a slimline portable PC ? NXP has a range of smaller, faster, cooler MOSFETs to help you deliver maximum reliability.
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LFPAK56
LFPAK33
LFPAK56,
LFPAK footprint
PowerPAK 1212-8 stencil
LFPAK footprint Renesas
PSMN8R2-80YS
POWERPAK SO8
DFN 3.3X3.3
PSMN7R0-30MLC
PSMN012-60YS
SOT223 nxp
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Untitled
Abstract: No abstract text available
Text: FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description Max rDS on = 3.15 mΩ at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and
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FDMC7572S
FDMC7572S
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Untitled
Abstract: No abstract text available
Text: FDMC8588 N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 mΩ Features General Description ̈ Max rDS on = 5.7 mΩ at VGS = 4.5 V, ID = 16.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMC8588
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Untitled
Abstract: No abstract text available
Text: FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description ̈ Max rDS on = 3.15 mΩ at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and
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FDMC7572S
FDMC7572S
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MO-240
Abstract: PQFN08B
Text: FDMC8588 N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 mΩ Features General Description Max rDS on = 5.7 mΩ at VGS = 4.5 V, ID = 16.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMC8588
FDMC8588
MO-240
PQFN08B
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